Datasheet> 器件分类 > 分立半导体> 晶体管> CMLT5554TRLEADFREE

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CMLT5554TRLEADFREE: 产品描述Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP; 产品类别分立半导体晶体管; 文件大小576KB，共2页; 制造商Central Semiconductor; 标准

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CMLT5554TRLEADFREE概述

Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP

CMLT5554TRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	compliant
最大集电极电流 (IC)	0.6 A
最小直流电流增益 (hFE)	60
最高工作温度	150 °C
极性/信道类型	NPN/PNP
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
标称过渡频率 (fT)	100 MHz
Base Number Matches	1

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CMLT5554

SURFACE MOUNT

DUAL,COMPLEMENTARY

HIGH VOLTAGE

SILICON TRANSISTORS

w w w. c e n t r a l s e m i . c o m

The CENTRAL SEMICONDUCTOR CMLT5554

consists of one 2N5551 NPN silicon transistor and one

individual isolated complementary 2N5401 PNP silicon

transistor, manufactured by the epitaxial planar process

and epoxy molded in an SOT-563 surface mount

package. This PICOmini™ device has been designed

for high voltage amplifier applications.

MARKING CODE: 5C4

SOT-563 CASE

MAXIMUM RATINGS:

(TA=25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

TJ, Tstg

NPN (Q1)

180

160

6.0

PNP (Q2)

160

150

5.0

UNITS

°C

°C/W

600

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS PER TRANSISTOR:

(TA=25°C unless otherwise noted)

NPN (Q1)

PNP (Q2)

SYMBOL

TEST CONDITIONS

MIN MAX

ICBO

VCB=120V

ICBO

VCB=100V

ICBO

VCB=120V, TA=100°C

ICBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

Cob

hfe

VCB=100V, TA=150°C

IC=100μA

IC=1.0mA

IE=10μA

IC=10mA,

IC=50mA,

IB=1.0mA

IB=5.0mA

180

160

6.0

100

0.15

0.2

1.0

250

300

6.0

200

8.0

160

150

5.0

100

0.2

0.5

1.0

240

300

6.0

200

8.0

UNITS

μA

IC=10mA, IB=1.0mA

IC=50mA, IB=5.0mA

VCE=5.0V, IC=1.0mA

VCE=5.0V, IC=10mA

VCE=5.0V, IC=50mA

VCE=10V, IC=10mA, f=100MHz

VCB=10V, IE=0, f=1.0MHz

VCE=10V, IC=1.0mA, f=1.0kHz

VCE=5.0V, IC=200μA, RS=10Ω,

f=10Hz to 15.7kHz

MHz

R1 (20-January 2010)

CMLT5554TRLEADFREE相似产品对比

	CMLT5554TRLEADFREE	CMLT5554TR	CMLT5554BK	CMLT5554BKLEADFREE
描述	Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 2-Element, NPN, Silicon, PLASTIC, PICOMINI-6	Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP
Reach Compliance Code	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	0.6 A	0.6 A	0.6 A	0.6 A
最小直流电流增益 (hFE)	60	30	30	60
最高工作温度	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN/PNP	NPN	NPN	NPN/PNP
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES	YES
标称过渡频率 (fT)	100 MHz	100 MHz	100 MHz	100 MHz

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