RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, TO-77,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 包装说明 | CYLINDRICAL, O-MBCY-W6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 最大集电极电流 (IC) | 0.2 A |
| 基于收集器的最大容量 | 1.7 pF |
| 集电极-发射极最大电压 | 12 V |
| 配置 | SEPARATE, 2 ELEMENTS |
| 最高频带 | VERY HIGH FREQUENCY BAND |
| JEDEC-95代码 | TO-77 |
| JESD-30 代码 | O-MBCY-W6 |
| 元件数量 | 2 |
| 端子数量 | 6 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | METAL |
| 封装形状 | ROUND |
| 封装形式 | CYLINDRICAL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | WIRE |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 600 MHz |
| Base Number Matches | 1 |

| BFY84.MOD | BFY84.MODG4 | BFY84G4 | BFY84 | |
|---|---|---|---|---|
| 描述 | RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, TO-77, | RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, TO-77, | RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, TO-77, | RF Small Signal Bipolar Transistor, 0.2A I(C), 2-Element, Very High Frequency Band, Silicon, NPN, TO-77, |
| 是否Rohs认证 | 不符合 | 符合 | 符合 | 符合 |
| 包装说明 | CYLINDRICAL, O-MBCY-W6 | CYLINDRICAL, O-MBCY-W6 | CYLINDRICAL, O-MBCY-W6 | CYLINDRICAL, O-MBCY-W6 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 0.2 A | 0.2 A | 0.2 A | 0.2 A |
| 基于收集器的最大容量 | 1.7 pF | 1.7 pF | 1.7 pF | 1.7 pF |
| 集电极-发射极最大电压 | 12 V | 12 V | 12 V | 12 V |
| 配置 | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS | SEPARATE, 2 ELEMENTS |
| 最高频带 | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND | VERY HIGH FREQUENCY BAND |
| JEDEC-95代码 | TO-77 | TO-77 | TO-77 | TO-77 |
| JESD-30 代码 | O-MBCY-W6 | O-MBCY-W6 | O-MBCY-W6 | O-MBCY-W6 |
| 元件数量 | 2 | 2 | 2 | 2 |
| 端子数量 | 6 | 6 | 6 | 6 |
| 最高工作温度 | 200 °C | 200 °C | 200 °C | 200 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL |
| 封装形状 | ROUND | ROUND | ROUND | ROUND |
| 封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO |
| 端子形式 | WIRE | WIRE | WIRE | WIRE |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 600 MHz | 600 MHz | 600 MHz | 600 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 |
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