BT168GWF
SCR
18 March 2014
Product data sheet
1. General description
Planar passivated SCR with faster switching performance and sensitive gate in a
SOT223 surface mounted plastic package. This SCR with enhanced commutation
performance is also designed to be interfaced directly to microcontrollers, logic integrated
circuits and other low power gate trigger circuits.
2. Features and benefits
•
•
•
•
Fast commutation performance for higher frequency operation
Full wave rectified AC applications
Sensitive gate
Direct triggering from microcontrollers, low power drivers and logic ICs
3. Applications
•
•
Earth leakage circuit breakers (ELCB/GFI)
Ignition circuits (gas appliances, small engines and HID lighting)
4. Quick reference data
Table 1.
Symbol
V
DRM
V
RRM
I
TSM
I
T(AV)
I
T(RMS)
Quick reference data
Parameter
repetitive peak off-
state voltage
repetitive peak reverse
voltage
non-repetitive peak on- half sine wave; T
j(init)
= 25 °C;
state current
t
p
= 10 ms;
Fig. 4; Fig. 5
average on-state
current
RMS on-state current
half sine wave; T
sp
≤ 112 °C;
Fig. 1
half sine wave; T
sp
≤ 112 °C;
Fig. 2;
Fig. 3
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
Fig. 9
70
200
450
µA
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
600
600
8
0.63
1
Unit
V
V
A
A
A
Scan or click this QR code to view the latest information for this product
SO
T2
23
NXP Semiconductors
BT168GWF
SCR
5. Pinning information
Table 2.
Pin
1
2
3
4
Pinning information
Symbol Description
K
A
G
mb
cathode
anode
gate
mb; connected to anode
1
2
3
Simplified outline
4
Graphic symbol
A
G
sym037
K
SC-73 (SOT223)
6. Ordering information
Table 3.
Ordering information
Package
Name
BT168GWF
SC-73
Description
plastic surface-mounted package with increased heatsink; 4
leads
Version
SOT223
Type number
BT168GWF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 March 2014
2 / 14
NXP Semiconductors
BT168GWF
SCR
7. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
V
RRM
I
T(AV)
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state voltage
repetitive peak reverse voltage
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
sp
≤ 112 °C;
Fig. 1
half sine wave; T
sp
≤ 112 °C;
Fig. 2;
Fig. 3
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms;
Fig. 4; Fig. 5
half sine wave; T
j(init)
= 25 °C;
t
p
= 8.3 ms
I t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
1
a = 1.57
2.2
2.8
0.6
4
conduction
angle
(degrees)
30
60
90
120
180
0
0.2
0.4
0.6
form
factor
a
4
2.8
2.2
1.9
1.57
α
1.9
2
Conditions
Min
-
-
-
-
-
-
-
-
-
-
-
Max
600
600
0.63
1
8
9
0.32
50
1
5
2
0.1
150
125
001aab496
Unit
V
V
A
A
A
A
2
I t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
2
t
p
= 10 ms; SIN
I
T
= 2 A; I
G
= 10 mA; dI
G
/dt = 100 mA/
µs
A s
A/µs
A
V
W
W
°C
°C
110
T
sp(max)
(°C)
113
over any 20 ms period
-
-40
-
P
tot
(W)
0.8
116
0.4
119
0.2
122
0
I
T(AV)
(A)
125
0.8
α = conduction angle; a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 1.
Total power dissipation as a function of average on-state current; maximum values
BT168GWF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 March 2014
3 / 14
NXP Semiconductors
BT168GWF
SCR
1.2
I
T(RMS)
(A)
0.8
001aab498
2
I
T(RMS)
(A)
1.5
001aab500
112 °C
1
0.4
0.5
0
-50
0
50
100
T
sp
(°C)
150
0
10
-2
10
-1
1
10
surge duration (s)
Fig. 2.
RMS on-state current as a function of solder
point temperature; maximum values
10
3
f = 50 Hz; T
sp
= 112 °C
Fig. 3.
RMS on-state current as a function of surge
duration; maximum values
001aab497
I
TSM
(A)
10
2
I
T
I
TSM
t
t
p
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
t
p
(s)
10
-2
t
p
≤ 10 ms
Fig. 4.
Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
BT168GWF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 March 2014
4 / 14
NXP Semiconductors
BT168GWF
SCR
10
I
TSM
(A)
8
001aab499
6
4
I
T
I
TSM
2
t
t
p
T
j(init)
= 25 °C max
0
1
10
10
2
number of cycles
10
3
f = 50 Hz
Fig. 5.
Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT168GWF
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet
18 March 2014
5 / 14
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
