GaAs PIN Diode Chips
RoHS Compliant
Features
♦
♦
♦
♦
♦
Rev. V1
May Be Directly Driven By TTL Signals
RoHS Compliant
Low Series Resistance
Fast Switching Speed
No Reverse Bias Required
Description
Anode
Gallium Arsenide PIN diodes offer improved
performance characteristics over silicon in many
microwave semiconductor applications These
benefits result from the intrinsic semiconductor
properties of GaAs. Its inherent high carrier mobility
results in a low resistance fast switching device. The
low carrier concentration in the I region layer
produces a near zero punch through bias voltage.
Gallium Arsenide's high band gap also assures it will
operate at high operating temperatures.
Switching speeds in the low nanosecond range
using an inexpensive TTL buffer logic is attainable
with GaAs PIN diodes. This performance can be
achieved because GaAs PIN diodes exhibit high
impedance at a positive bias (up to .5V). Reverse
bias is not required for many GaAs PIN diode
applications. Low loss, in switch and phase shifter
circuits at frequencies up to 40 GHz is possible as a
result of low parasitic series resistance in the
conducting and non-conducting states.
M/A-COM’s GaAs PIN diode chips are also available
in several different package styles. See page 4
Full Area Cathode
MIL-STD 750 Environmental Ratings
Parameter
Temp. Cycling
Vibration
Constant Acceleration
Moisture Resistance
(Packaged diodes)
Method
1051
2056
2006
Level
5cycles
-65°C to +150°C
15g’s
20,000g”s
Absolute Maximum Ratings
1
Parameter
Operating Temperature
Storage Temperature
Power Dissipation
Junction Temperature
Mounting Temperature
1
Maximum Value
-65°C to +175°C
-65°C to +175°C
0.25W @ 25°C
+175°C
+320°C for 10 seconds
1021
10 Days
1. Exceeding these limits may cause permanent damage.
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
RoHS Compliant
GaAs Chip Specification @ T
AMB
= +25°C
Rev. V1
Nominal Characteristics
Part Number
Max. Rev.
Volt.
1
V
R
< 10 µA
V
DC
MA4GP022-277
MA4GP030-277
50
100
Max. Cap.
1 MHz
C
j
@ -10 V
pF
0.15
0.06
Max. Series Res.
2
1 GHz
R
S
@ 20 mA
Ω
1.0
2.0
Carrier Lifetime
Switching Speed
3
T
L
@ I
FOR
= 10 mA
7 GHz
I
REV
= 6 mA
ηS
5
10
ηS
15
25
Notes:
1. V
R
( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is measured to be <10µA.
2. Chip is mounted into case style ODS 30 ceramic package.
3. Switching speed is measured between 1 dB and 20 dB loss in a shunt mounted switch
Case Style 277 (Chip)
A
B
Typical TTL Driver Circuit
B
C
Anode
Dimension
A
B
C
2
Mils
7 ± .5
11 ± 1
2.2 ± .3
Millimeters
.178 ± .013
.279 ± .025
.056 ± .008
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
RoHS Compliant
Typical Performance @ T
AMB
= +25°C
Rev. V1
MA4GP022
MA4GP030
Figure 3. Typical Capacitance vs. Voltage at 1 GHz
3
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
RoHS Compliant
Ordering Information
The GaAs Chip specifications shown in the table on page 2 are for the stand alone die, package style 277. Note that the
table lists the bare die junction capacitance and that the total capacitance for the base part in an alternative package will
differ. The total capacitance in an alternative package can be computed by adding the capacitance shown in the table
on page 2 to the parasitic capacitance of the alternative package as defined in the
Package Parasitic Capacitance
table below. The base part numbers are only available in the case styles shown in the
Package Availability Table
below. To order, indicate the base part number followed by a dash and the desired package style.
For example:
The MA4GP030-30 is the MA4GP030 chip in the 30 style package.
Rev. V1
Package Parasitic Capacitance
Package Style
30
120
137
276
277
1056
Inductance (nH)
0.40
0.40
0.40
0.40
N/A (Chip)
0.20
Cap. (pF)
0.18
0.13
0.13
0.13
N/A (Chip)
0.20
Dimension
A
B
Style 120
B
A
Package Availability Table
Base Part Number
MA4GP022
MA4GP030
Available Package Styles
137, 277
30, 120, 276, 277, 1056
Mils
53 ± 2
45 ± 5
Millimeters
1346 ± 51
1143 ± 127
Style 30
B
F
G
C
D
C
B
Style 137
A
Cathode
E
E
D
H
A
G
Dimension
Millimeters
3073 ± 102
1575 ± 51
5461 ± 254
2311 ± 152
1575 ± 51
1575 ± 51
508 ± 102
2057 ± 51
A
B
C
D
E
F
G
Mils
100 ± 10
20 ± 2
100 ± 5
4±1
50 max.
14 max.
Millimeters
2540 ± 254
508 ± 51
2540 ± 127
102 ± 25
1270 max.
356 max.
Dimension
A
B
C
D
E
F
G
H
Mils
121 ± 4
62 ± 2
215 ± 10
91 ± 6
62 ± 2
62 ± 2
20 ± 4
81 ± 2
4
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
GaAs PIN Diode Chips
RoHS Compliant
Package Styles
Rev. V1
Style 137
C
B
A
Style 1056
Cathode
A
A
E
D
Cathode
F
Dimension
A
B
C
D
E
F
Mils
100 ± 10
20 ± 2
100 ± 5
4±1
50 max.
14 max.
Millimeters
2540 ± 254
508 ± 51
2540 ± 127
102 ± 25
1270 max.
356 max.
C
E
F
D
B
Dimension
Mils
70 ± 5
37 ± 4
33 ± 3
15 ± 2
12 ± 2
48 ± 5
Millimeters
1778 ± 127
940 ± 102
838 ± 76
381 ± 51
305 ± 51
1219 ± 127
Style 276
A
B
C
D
A
B
C
D
E
F
F
E
Dimension
A
B
C
D
E
F
Mils
15 ± 5
45 ± 5
5 max.
53 ± 2
200 min.
20 ± 1
Millimeters
381 ± 127
1143 ± 127
127 max.
1346 ± 51
5080 min.
508 ± 25
5
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
•
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
•
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
•
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.
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