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MA4BN1840-2

产品描述SPECIALTY ANALOG CIRCUIT, UUC4
产品类别模拟混合信号IC    信号电路   
文件大小124KB,共7页
制造商MACOM
官网地址http://www.macom.com
标准
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MA4BN1840-2概述

SPECIALTY ANALOG CIRCUIT, UUC4

专业模拟电路, UUC4

MA4BN1840-2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称MACOM
零件包装代码DIE
包装说明DIE,
针数4
Reach Compliance Codecompli
模拟集成电路 - 其他类型ANALOG CIRCUIT
JESD-30 代码R-XUUC-N4
长度1.625 mm
功能数量1
端子数量4
最高工作温度125 °C
最低工作温度-65 °C
封装主体材料UNSPECIFIED
封装代码DIE
封装形状RECTANGULAR
封装形式UNCASED CHIP
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
表面贴装YES
温度等级MILITARY
端子形式NO LEAD
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度1.415 mm

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MA4BN1840-2
Monolithic HMIC™
Integrated Bias Network
Features
Broad Bandwidth Specified 18 to 40GHz
Usable 10GHz to 50 GHz
Extremely Low Insertion Loss
High RF-DC Isolation
Rugged, Fully Monolithic Glass Encapsulation
RoHS Compliant
Rev. V3
Description
The MA4BN1840-2 is a fully monolithic broadband bias
network utilizing M/A-COM's HMIC (Heterolithic Micro-
wave Integrated Circuit) process, US Patent 5,268,310.
This process allows the formation of silicon vias by
imbedding them in low loss, low dispersion glass along
with high Q spiral inductors and MIM capacitors. The
close proximity between elements and the combination
of silicon and glass gives this HMIC device low loss and
high performance with exceptional repeatability through
millimeter frequencies.
TM
Yellow areas denote bond pads
Large bond pads facilitate the use of low inductance
ribbon bonds, while the gold backside metallization
provides the RF and DC ground. This allows for manual
or automatic die attach via electrically conductive silver
epoxy or RoHS compliant solders.
.
Schematic
Applications
The MA4BN1840-2 bias network is suitable for the
D.C. biasing of PIN diode control circuits. It functions
as an RF-DC de-coupling network as well as the D.C.
return. The device can also be used as a bi-directional
re-active coupler for Schottky detector circuits. D.C.
currents up to 150 mA and D.C. voltages up to 50 V
may be used.
J1 (IN)
J2 (OUT)
Maximum Operating Conditions at +25°C
(Unless otherwise noted)
Parameter
Operating Temperature
Storage Temperature
Die Attach Temperature
RF C.W. Incident Power
D.C. Bias Current
D.C. Bias Voltage
D.C.
Ground
B1
B2
D.C. Bias #1 D.C. Bias #2
D.C.
Ground
Value
-65°C to +125°C
-65°C to +150°C
320°C for 20 sec
10 Watts
+/- 150 mA
+/- 50 V
1
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
North America
Tel: 800.366.2266 / Fax: 978.366.2266
is considering for development. Performance is based on target specifications, simulated results,
Europe
Tel: 44.1908.574.200 / Fax: 44.1908.574.300
and/or prototype measurements. Commitment to develop is not guaranteed.
Asia/Pacific
Tel: 81.44.844.8296 / Fax: 81.44.844.8298
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.

 
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