PTRA093302FC
Thermally-Enhanced High Power RF LDMOS FET
330 W, 50 V, 746 – 768 MHz
Description
The PTRA093302FC is a 330-watt LDMOS FET with an asym-
metric design intended for use in multi-standard cellular power
amplifier applications in the 746 MHz to 768 MHz frequency band.
Features include dual-path design, input matching, high gain and
thermally-enhanced package with earless flange. Manufactured
with Infineon's advanced LDMOS process, this device provides
excellent thermal performance and superior reliability.
PTRA093302FC
Package H-37248-4
V
DD
= 48 V, I
DQ
= 400 mA, ƒ = 768 MHz,
3GPP WCDMA signal,
PAR = 10 dB, 3.84 MHz BW
24
60
Efficiency
Single-carrier WCDMA Drive-up
Features
•
Input matched
•
Asymmetric Doherty design
- Main: P
1dB
= 150 W Typ
- Peak: P
1dB
= 175 W Typ
•
Typical Pulsed CW performance, 746–768 MHz,
48 V, combined outputs
- Output power at P
1dB
= 200 W
- Efficiency = 54%
- Gain = 16.5 dB
•
Capable of handling 10:1 VSWR @48 V, 79 W (CW)
output power
•
Integrated ESD protection
•
Human Body Model Class 1C (per ANSI/ESDA/
JEDEC JS-001)
•
Low thermal resistance
•
Pb-free and RoHS-compliant
Peak/Average Ratio, Gain (dB)
20
16
12
8
4
0
40
Gain
0
-20
-40
-60
PAR @ 0.01% CCDF
25
30
35
40
45
50
ptra093302dc_g1
55
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications
(tested in Infineon Doherty production test fixture)
V
DD
= 48 V, I
DQ
= 400 mA, P
OUT
= 79 W avg, V
GS(peak)
= (V
GS
@I
DQ
= 400 mA) – 3.0 V, ƒ = 768 MHz. 3GPP WCDMA signal:
peak/average = 10 dB @ 0.01% CCDF, channel bandwidth = 3.84 MHz.
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
All published data at T
CASE
= 25°C unless otherwise indicated
Efficiency (%)
20
Symbol
G
ps
Min
16.0
47.0
—
Typ
17.25
51.6
–32.5
Max
—
—
–30.0
Unit
dB
%
dBc
h
D
ACPR
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 03.1, 2017-01-31
PTRA093302FC
DC Characteristics
(each side)
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 50 V, V
GS
= 0 V
V
DS
= 105 V, V
GS
= 0 V
Symbol
V(
BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
R
DS(on)
V
GS
V
GS
Min
105
—
—
—
—
—
3.1
0.2
Typ
—
—
—
—
0.4
0.3
3.56
0.58
Max
—
1
10
1
—
—
4.0
1.0
Unit
V
µA
µA
µA
W
W
V
V
Gate Leakage Current
On-State Resistance
(main)
(peak)
Operating Gate Voltage (main)
(peak)
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 50 V, I
DQ
= 400 mA
V
DS
= 50 V, I
DQ
= 0 mA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, T
CASE
= 70°C, 79 W CW)
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
qJC
Value
105
–6 to +12
0 to +55
225
–65 to +150
0.56
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTRA093302FC V1 R0
PTRA093302FC V1 R2
Order Code
PTRA093302FCV1R0XTMA1
PTRA093302FCV1R2XTMA1
Package Description
H-37248-4, earless flange
H-37248-4, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 03.1, 2017-01-31
PTRA093302FC
Typical RF Performance
(data taken in production test fixture)
VDD = 48 V, IDQ = 400 mA, ƒ = 768 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
60
50
Single-carrier WCDMA Drive-up
V
DD
= 48 V, I
DQ
= 400 mA, P
OUT
= 48.98 dBm,
3GPP WCDMA signal, PAR = 10 dB
20
Efficiency
Single-carrier WCDMA Broadband
Performance
60
ACP Up & Low (dBc)
-20
-30
-40
-50
-60
-70
768MHz ACPU
768MHz ACPL
768MHz Eff
ptra093302dc_g2
Efficiency(%)
30
20
10
0
16
Gain
40
14
30
25
30
35
40
45
50
55
12
ptra093302dc_g3
Average Output Power (dBm)
650
700
750
800
850
20
Frequency (MHz)
V
DD
= 48 V, I
DQ
= 400 mA, P
OUT
= 48.98 dBm,
3GPP WCDMA signal, PAR = 10 dB
-5
-5
-10
20
19
Single-carrier WCDMA Broadband
Performance
V
DD
= 48 V, I
DQ
= 400mA
746MHz Gain
755MHz Gain
768Mhz Gain
746MHz Eff
755MHz Eff
768MHz Eff
CW Performance
70
60
ACPL & ACP Up (dBc)
-10
-15
-20
-25
-30
-35
-40
650
700
750
800
ACPU
ACPL
IRL
ptra093302dc_g4
Return Loss (dB)
-20
-25
-30
-35
850
-40
17
16
15
14
13
ptra093302dc_g5
40
30
20
10
29
33
37
41
45
49
53
57
0
Frequency (MHz)
Output Power (dBm)
Data Sheet
3 of 8
Rev. 03.1, 2017-01-31
Efficiency (%)
-15
18
50
Gain (dB)
Efficiency (%)
40
18
50
Gain (dB)
PTRA093302FC
Typical RF Performance
(cont.)
CW Performance
at various V
DD
44V Gain
48V Gain
52V Gain
44V Eff
48V Eff
52V Eff
I
DQ
= 400 mA, ƒ = 768 MHz
20
19
70
60
18
17
CW Performance Small Signal
Gain & Input Return Loss
V
DD
= 48 V, I
DQ
= 400 mA
-5
Efficiency (%)
Gain (dB)
17
16
15
14
13
ptra093302dc_g6
40
30
20
10
0
Gain (dB)
18
50
16
15
14
13
12
ptra093302dc_g7
-10
IRL
-15
29
33
37
41
45
49
53
57
700
725
750
775
800
825
-20
Output Power (dBm)
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance
– Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, I
DQ
= 300 mA, class AB
P
1dB
Max Output Power
Freq
[MHz]
746
751
756
768
Zs
[
W]
1.72-j4.55
1.85-j4.5
1.91-j4.63
2.1-j4.9
Zl
[
W
]
2.68-j0.21
2.22-j0.22
3.66-j0.89
3.49-j0.85
Gain
[dB]
20.45
19.88
20.24
20.13
P
OUT
[dBm]
52.45
52.37
52.30
52.33
P
OUT
[W]
176
173
170
171
[%]
55.0
49.6
53.5
53.7
Max PAE
h
D
Zl
[
W
]
2.14+j2.47
2.03+j3.1
2.34+j2.63
2.51+j2.47
Gain
[dB]
22.95
23.54
22.98
22.64
P
OUT
[dBm]
50.52
49.57
50.42
50.64
P
OUT
[W]
113
91
110
116
[%]
70.0
70.6
69.9
69.6
h
D
Peak Side Load Pull Performance
– Pulsed CW signal: 10 µs, 10% duty cycle, 48 V, V
GS(PEAK)
= 2.1 V, class C
P
1dB
Max Output Power
Freq
[MHz]
746
751
756
768
Zs
[
W]
1.45-j4.42
1.51-j4.50
1.59-j4.59
1.72-j4.94
Zl
[
W
]
1.91-j0.19
1.65+j0.04
2.25-j0.56
2.40-j0.76
Gain
[dB]
16.5
16.6
16.3
16.2
P
OUT
[dBm]
53.07
53.08
52.90
52.99
P
OUT
[W]
203
203
195
199
[%]
54.8
55.3
53.2
53.4
Max PAE
h
D
Zl
[
W
]
1.85+j2.73
2.18+j2.84
2.00+j2.41
1.75+j3.02
Gain
[dB]
17.60
17.62
17.51
17.27
P
OUT
[dBm]
50.22
50.40
50.66
49.62
P
OUT
[W]
105
110
116
92
h
D
[%]
71.8
73.6
71.1
71.6
Data Sheet
4 of 8
Rev. 03.1, 2017-01-31
Input Return Loss (dB)
Gain
PTRA093302FC
Reference Circuit, 746 – 768 MHz
V
GS(MAIN)
C206
V
DD
RO4360, 20MIL
(194)
RO4360, 20MIL
(194)
C208
C205
C207
C204
C109
C107
C203
C103
C101
C102
R101
C202
C201
RF_IN
R103
U1
C106
C104
C105
R102
C212
C110
C218
C209
C211
C210
RF_OUT
V
DD
C108
C213
C214
C215
C216
C217
p t ra 0 9 3 3 0 2 f c _ C D _ 0 3 - 1 6 - 2 0 1 6
PTRA093302FC_IN_01
V
GS(PEAK)
PTRA093302FC_OUT_01
Reference circuit assembly diagram (not to scale)
Reference Circuit Assembly
DUT
Test Fixture Part No.
PCB
PTRA093302FC V1
LTA/PTRA093302FC V1
Rogers 4360, 0.508 mm [0.020”] thick, 2 oz. copper,
ε
r
= 6.15, ƒ = 746 – 768 MHz
Find Gerber files for this test fixture on the Infineon Web site at
http://www.infineon.com/rfpower
Data Sheet
5 of 8
Rev. 03.1, 2017-01-31
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