E
PR
LIM
Y
CMPD7005
AR
IN
CMPD7005A
CMPD7005C
CMPD7005S
Central
TM
Semiconductor Corp.
SURFACE MOUNT
VERY HIGH VOLTAGE
SILICON SWITCHING DIODE
DESCRIPTION:
The Central Semiconductor CMPD7005,
CMPD7005A, CMPD7005C and CMPD7005S
are silicon switching diodes with various diode
configurations, manufactured by the epitaxial
planar process and packaged in an epoxy
molded SOT-23 surface mount case. These
devices are designed for applications requiring
high voltage switching diodes.
SOT-23 CASE
The following configurations are available:
CMPD7005
CMPD7005A
CMPD7005C
CMPD7005S
SINGLE
DUAL, COMMON ANODE
DUAL, COMMON CATHODE
DUAL, IN SERIES
MARKING
MARKING
MARKING
MARKING
CODE:
CODE:
CODE:
CODE:
C7005
C705A
C705C
C705S
MAXIMUM RATINGS PER DIODE:
(TA=25°C)
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1.0 µs
Forward Surge Current, tp=1.0 s
Power Dissipation
Operating and Storage
Junction Temperature
Thermal Resistance
P
E
R
I
L
IN
M
VR
IF
VRRM
IFRM
IFSM
PD
TJ, Tstg
Θ
JA
IFSM
SYMBOL
Y
R
A
500
500
100
300
4.0
1.0
350
-65 to +150
357
UNITS
V
V
mA
mA
A
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
IR
IR
BVR
VF
VF
VF
CT
trr
VR=400V
VR=400V, TA=150°C
IR=1.0µA
IF=10mA
IF=50mA
IF=100mA
VR=0V, f=1.0 MHz
IR=IF=10mA, RL=100Ω, Rec. to 1.0mA
MAX
100
100
UNITS
nA
µA
V
V
V
V
pF
ns
500
1.0
1.2
1.4
5.0
500
R1 (8-February 2005)
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