FAN7171-F085
600 V / 4 A, High-Side
Automotive Gate Driver IC
Description
The FAN7171-F085 is a monolithic high−side gate drive IC that can
drive high−speed MOSFETs and IGBTs that operate up to +600 V. It
has a buffered output stage with all NMOS transistors designed for
high pulse current driving capability and minimum cross−conduction.
ON Semiconductor’s high−voltage process and common−mode
noise-canceling techniques provide stable operation of the high−side
driver under high-dv/dt noise circumstances. An advanced level−shift
circuit offers high−side gate driver operation up to V
S
=
−9.8
V
(typical) for V
BS
= 15 V.
The UVLO circuit prevents malfunction when V
BS
is lower than the
specified threshold voltage.
The high−current and low−output voltage-drop feature make this
device suitable for sustaining switch drivers and energy−recovery
switch drivers in automotive motor drive inverters, switching power
supplies, and high−power DC−DC converter applications.
Features
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SOIC8
CASE 751EB
ORDERING INFORMATION
Device
FAN7171M-F085
FAN7171MX−F085
Package
Case 751EB
(Pb−Free /
Halogen Free)
Shipping†
Tube
Tape & Reel
•
•
•
•
•
•
•
•
Floating Channel for Bootstrap Operation to +600 V
4 A Sourcing and 4 A Sinking Current Driving Capability
Common−Mode dv/dt Noise−Cancelling Circuit
3.3 V and 5 V Input Logic Compatible
Output In−phase with Input Signal
Under− Voltage Lockout for V
BS
25 V Shunt Regulator on V
DD
and V
BS
8−SOIC Package, Case 751EB
(JEDEC MS−012, 0.150 inch Narrow Body)
•
Automotive Qualified to AEC Q100 for Ambient Operating
Temperature from
−40°C
to 125°C
Applications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1. These devices passed wave soldering
test by JESD22A−111.
2. A suffix as “…F085P” has been temporarily
introduced in order to manage a double source
strategy as ON Semiconductor has officially
announced in Aug 2014.
•
Common Rail Injection Systems
•
DC−DC Converter
•
Motor Drive (Electric Power Steering, Fans)
Related Product Resources
•
FAN7171−F085 Product Folder
•
AN−6076 Design and Application Guide of Bootstrap Circuit for
High−Voltage Gate−Drive IC
•
AN−8102 200 Recommendations to Avoid Short Pulse Width Issues
in HVIC Gate Driver Applications
•
AN−9052 Design Guide for Selection of Bootstrap Components
•
AN−4171 FAN7085 High−Side Gate Driver− Internal Recharge Path
Design Considerations
©
Semiconductor Components Industries, LLC, 2013
August, 2017
−
Rev. 3
1
Publication Order Number:
FAN7171−F085/D
FAN7171−F085
TYPICAL APPLICATION
15 V
R
BOOT
D
BOOT
FAN7171_F805
1 V
DD
PWM
2 IN
C1 3 NC
4
GND
V
B
8
R1
HO
V
S
NC
7
6
5
C
BOOT
R2
L1
V
IN
D1
C2
V
OUT
Figure 1. Typical Application
BLOCK DIAGRAM
V
DD
GND
1
4
25 V
V
DD
Shoot−through current
Compensated gate driver
8
UVLO
PULSE
GENERATOR
V
B
110 K
IN
2
NOISE
CANCELLER
R
S
R
Q
7
25 V
6
HO
V
S
Pins 3 and 5 are no connection
Figure 2. Block Diagram
PIN CONFIGURATION
V
DD
IN
NC
GND
1
2
3
4
FAN7371
8 V
B
7 HO
6 V
S
5 NC
Figure 3. Pin Assignment (Top Through View)
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2
FAN7171−F085
Table 1. PIN DESCRIPTIONS
Pin #
1
2
3
4
5
6
7
8
Name
V
DD
IN
NC
GND
NC
V
S
HO
V
B
Supply Voltage
Logic Input for High−Side Gate Driver Output
No Connection
Ground
No Connection
High−Voltage Floating Supply Return
High−Side Driver Output
High−Side Floating Supply
Description
Table 2. ABSOLUTE MAXIMUM RATINGS
Symbol
V
S
V
B
V
HO
V
DD
V
IN
dV
S
/dt
P
D
θ
JA
T
J
T
STG
T
A
ESD
Characteristics
High−Side Floating Offset Voltage
High−Side Floating Supply Voltage (Note 3)
High−Side Floating Output Voltage
Low−Side and Logic Supply Voltage (Note 3)
Logic Input Voltage
Allowable Offset Voltage Slew Rate
Power Dissipation (Notes 4, 5, 6)
Thermal Resistance
Junction Temperature
Storage Temperature
Operating Ambient Temperature
Human Body Model (HBM)
Charge Device Model (CDM)
−55
−55
−40
Min.
V
B
−V
SHUNT
−0.3
V
S
−0.3
−0.3
−0.3
Max.
V
B
+0.3
625.0
V
B
+0.3
V
SHUNT
V
DD
+0.3
±50
0.625
200
150
150
125
1500
500
Unit
V
V
V
V
V
V/ns
W
°C/W
°C
°C
°C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
3. This IC contains a shunt regulator on V
DD
and V
BS
with a normal breakdown voltage of 25 V. Please note that this supply pin should not be
driven by a low−impedance voltage source greater than the V
SHUNT
specified in the Electrical Characteristics section.
4. Mounted on 76.2 x 114.3 x 1.6 mm PCB (FR−4 glass epoxy material).
5. Refer to the following standards:
JESD51−2: Integral circuits thermal test method environmental conditions, natural convection, and
JESD51−3: Low effective thermal conductivity test board for leaded surface−mount packages.
6. Do not exceed power dissipation (P
D
) under any circumstances.
Table 3. RECOMMENDED OPERATING CONDITIONS
Symbol
V
BS
Characteristics
High−Side Floating Supply Voltage
High−Side Floating Supply Offset Voltage (DC)
V
S
V
HO
V
IN
V
DD
T
PULSE
High−Side Floating Supply Offset Voltage (Transient)
High−Side Output Voltage
Logic Input Voltage
Supply Voltage
Minimum Input Pulse Width (Note 7)
Min.
V
S
+10
6−V
DD
−15
(~170)
−7
(~400)
V
S
GND
10
80
V
B
V
DD
20
−
V
V
V
ns
600
V
Max.
V
S
+20
Unit
V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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3
FAN7171−F085
7. Input pulses shorter than the minimum recommendation can cause abnormal output. Short input pulses can be turn on pulses (i.e., rising
edge to the adjacent falling edge), turn off pulses (i.e., falling edge to the adjacent rising edge) but also parasitic pulses induced by noise.
Refer to Figure 24 and Figure 25. Value guaranteed by design.
Table 4. ELECTRICAL CHARACTERISTICS
(V
BIAS
(V
DD
, V
BS
) = 15 V,
−40°C
≤
T
A
≤
125°C, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to GND. The V
O
and I
O
parameters are relative to V
S
and are applicable to the respective output HO)
Symbol
POWER SUPPLY SECTION
I
QDD
I
PDD
Quiescent V
DD
Supply Current
Operating V
DD
Supply Current
V
IN
= 0 V or 5 V
f
IN
= 20 kHz,
No Load
25
35
70
100
μA
μA
Parameter
Conditions
Min.
Typ.
Max.
Unit
BOOTSTRAPPED SUPPLY SECTION
V
BSUV+
V
BSUV−
V
BSHYS
I
LK
I
QBS
I
PBS
V
BS
Supply Under−Voltage Positive-Going
Threshold Voltage
V
BS
Supply Under−Voltage Negative−Going
Threshold Voltage
V
BS
Supply UVLO Hysteresis Voltage
Offset Supply Leakage Current
Quiescent V
BS
Supply Current
Operating V
BS
Supply Current
V
BS
= Sweep
V
BS
= Sweep
V
BS
= Sweep
V
B
= V
S
= 600 V
V
IN
= 0 V or 5 V
C
LOAD
= 1 nF,
f
IN
= 20 kHz,
RMS Value
60
0.73
8.2
7.5
9.2
8.5
0.6
50
120
2.80
10.2
9.5
V
V
V
μA
μA
mA
SHUNT REGULATOR SECTION
V
SHUNT
V
IH
V
IL
I
IN+
I
IN−
R
IN
V
OH
V
OL
I
O+
V
DD
and V
BS
Shunt Regulator Clamping Voltage
Logic “1” Input Voltage
Logic “0” Input Voltage
Logic Input High Bias Current
Logic Input Low Bias Current
Input Pull−down Resistance
V
IN
= 5 V
V
IN
= 0 V
40
110
45
I
SHUNT
= 5 mA
23
25
V
INPUT LOGIC SECTION (IN)
2.5
0.8
125
2
V
V
μA
μA
kΩ
GATE DRIVER OUTPUT SECTION (HO)
High Level Output Voltage (V
BIAS
−
V
O
)
Low Level Output Voltage
Output High, Short−Circuit Pulsed Current (Note 8)
No Load
No Load
V
HO
= 0 V,
V
IN
= 5 V,
PW
≤
10
μs
V
HO
= 15 V,
V
IN
= 0 V,
PW
≤
10
μs
3.0
4.0
1.5
35
V
mV
A
I
O−
Output Low, Short−Circuit Pulsed Current (Note 8)
3.0
4.0
A
V
S
Allowable Negative V
S
Pin Voltage for IN Signal
Propagation to HO
−9.8
−7.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
8. These parameters guaranteed by design.
Table 5. DYNAMIC ELECTRICAL CHARACTERISTICS
(V
BIAS
(V
DD
, V
BS
) = 15 V, V
S
= GND = 0 V, C
L
=1000 pF, and
−40°C
≤
T
A
≤
125°C, unless otherwise specified)
Symbol
t
ON
t
OFF
Parameter
Turn−On Propagation Delay
Turn−Off Propagation Delay
Conditions
V
S
= 0 V
V
S
= 0 V
Min.
Typ.
150
150
Max.
210
210
Unit
ns
ns
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FAN7171−F085
Table 5. DYNAMIC ELECTRICAL CHARACTERISTICS
(continued)
(V
BIAS
(V
DD
, V
BS
) = 15 V, V
S
= GND = 0 V, C
L
=1000 pF, and
−40°C
≤
T
A
≤
125°C, unless otherwise specified)
Symbol
t
R
t
F
Turn−On Rise Time
Turn−Off Fall Time
Parameter
Conditions
Min.
Typ.
25
15
Max.
50
45
Unit
ns
ns
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