Standard SRAM, 16KX4, 15ns, BICMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24
| 参数名称 | 属性值 |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 不符合 |
| 零件包装代码 | DIP |
| 包装说明 | 0.300 INCH, CERAMIC, DIP-24 |
| 针数 | 24 |
| Reach Compliance Code | not_compliant |
| ECCN代码 | 3A001.A.2.C |
| 最长访问时间 | 15 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-GDIP-T24 |
| JESD-609代码 | e0 |
| 长度 | 32.004 mm |
| 内存密度 | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 4 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 24 |
| 字数 | 16384 words |
| 字数代码 | 16000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 16KX4 |
| 输出特性 | 3-STATE |
| 可输出 | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP24,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 筛选级别 | 38535Q/M;38534H;883B |
| 座面最大高度 | 5.08 mm |
| 最大待机电流 | 0.17 A |
| 最大压摆率 | 0.17 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | NO |
| 技术 | BICMOS |
| 温度等级 | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 宽度 | 7.62 mm |
| Base Number Matches | 1 |
| IDT61B98S15TDB | IDT61B98S12TDB | IDT61B98S10TD | IDT61B98S10TDB | IDT61B98S8TP | |
|---|---|---|---|---|---|
| 描述 | Standard SRAM, 16KX4, 15ns, BICMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 16KX4, 12ns, BICMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 16KX4, 10ns, BICMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 16KX4, 10ns, BICMOS, CDIP24, 0.300 INCH, CERAMIC, DIP-24 | Standard SRAM, 16KX4, 8ns, BICMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24 |
| 是否无铅 | 含铅 | 含铅 | 含铅 | 含铅 | 含铅 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 零件包装代码 | DIP | DIP | DIP | DIP | DIP |
| 包装说明 | 0.300 INCH, CERAMIC, DIP-24 | 0.300 INCH, CERAMIC, DIP-24 | 0.300 INCH, CERAMIC, DIP-24 | 0.300 INCH, CERAMIC, DIP-24 | 0.300 INCH, PLASTIC, DIP-24 |
| 针数 | 24 | 24 | 24 | 24 | 24 |
| Reach Compliance Code | not_compliant | not_compliant | not_compliant | not_compliant | not_compliant |
| ECCN代码 | 3A001.A.2.C | 3A001.A.2.C | EAR99 | 3A001.A.2.C | EAR99 |
| 最长访问时间 | 15 ns | 12 ns | 10 ns | 10 ns | 8 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-GDIP-T24 | R-PDIP-T24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 长度 | 32.004 mm | 32.004 mm | 32.004 mm | 32.004 mm | 31.6865 mm |
| 内存密度 | 65536 bit | 65536 bit | 65536 bit | 65536 bit | 65536 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 16384 words | 16384 words | 16384 words | 16384 words | 16384 words |
| 字数代码 | 16000 | 16000 | 16000 | 16000 | 16000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 125 °C | 125 °C | 70 °C | 125 °C | 70 °C |
| 最低工作温度 | -55 °C | -55 °C | - | -55 °C | - |
| 组织 | 16KX4 | 16KX4 | 16KX4 | 16KX4 | 16KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | YES | YES | YES | YES | YES |
| 封装主体材料 | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | CERAMIC, GLASS-SEALED | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | DIP | DIP | DIP |
| 封装等效代码 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 | DIP24,.3 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 5.08 mm | 5.08 mm | 5.08 mm | 5.08 mm | 4.191 mm |
| 最大待机电流 | 0.17 A | 0.17 A | 0.18 A | 0.19 A | 0.2 A |
| 最大压摆率 | 0.17 mA | 0.17 mA | 0.18 mA | 0.19 mA | 0.2 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | NO | NO | NO |
| 技术 | BICMOS | BICMOS | BICMOS | BICMOS | BICMOS |
| 温度等级 | MILITARY | MILITARY | COMMERCIAL | MILITARY | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn85Pb15) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 宽度 | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm | 7.62 mm |
| 筛选级别 | 38535Q/M;38534H;883B | 38535Q/M;38534H;883B | - | 38535Q/M;38534H;883B | - |
| 厂商名称 | - | - | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) | IDT (Integrated Device Technology) |
Microchip MCU
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