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SKIIP1813GB121-3DULW

产品描述Half Bridge Based Peripheral Driver, 3000A
产品类别模拟混合信号IC    驱动程序和接口   
文件大小158KB,共1页
制造商SEMIKRON
官网地址http://www.semikron.com
标准  
下载文档 详细参数 选型对比 全文预览

SKIIP1813GB121-3DULW概述

Half Bridge Based Peripheral Driver, 3000A

SKIIP1813GB121-3DULW规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
包装说明,
Reach Compliance Codecompliant
ECCN代码EAR99
内置保护TRANSIENT
接口集成电路类型HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码R-XXMA-X
JESD-609代码e3/e4
功能数量3
输出电流流向SOURCE AND SINK
标称输出峰值电流3000 A
封装主体材料UNSPECIFIED
封装形状RECTANGULAR
封装形式MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
表面贴装NO
端子面层TIN/SILVER
端子形式UNSPECIFIED
端子位置UNSPECIFIED
处于峰值回流温度下的最长时间NOT SPECIFIED
Base Number Matches1

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SKiiP 1813GB121-3DL
I. Power section 3 * SKiiP613GB121CT per phase
Absolute maximum ratings
Symbol
Conditions
1)
Values
1200
900
±
20
1800 / 1350
3600
1350 / 1012,5
2700
12960
840
-40...+150 (125)
3000
3 * 500
Units
V
V
V
A
A
A
A
A
kA
2
s
°C
V
A
IGBT and inverse diode
V
CES
V
CC
Operating DC link voltage
V
GES
I
C
IGBT, T
heat sink
= 25 / 70 °C
I
CM
IGBT, t
p
< 1 ms,T
heat sink
= 25°C
I
F
Diode, T
heat sink
= 25 / 70 °C
I
FM
Diode, t
p
< 1 ms
I
FSM
Diode, T
j
= 150 °C, 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
T
j
, (T
stg
)
V
isol
AC, 1min.
4)
I
C-package
T
heat sink
= 70°C, T
term
= 115 °C
SKiiPPACK
SK integrated intelligent
Power PACK
rd
3 Generation
2-pack
3)
SKiiP 1813GB121-3DL
Target data
housing S33
Characteristics
Symbol
IGBT
V
(BR)CES
Conditions
1)
min.
≥V
CES
typ.
3,6
108
0,9
0,90
2,3
515
837
4
4
0,13
1,8
54
1,0
0,61
3 * 400
3 * 500
0,1
±
3000
max.
2
Units
V
mA
mA
V
mΩ
V
V
mJ
mJ
nF
nH
mΩ
V
V
mJ
V
mΩ
°C/W
°C/W
°C/W
°C/W
A
A
%
A
4)
5)
gate driver without supply
V
GE
= 0,
T
j
= 25 °C
I
CES
T
j
= 125 °C
V
CE
= V
CES
7)
V
CEO
T
j
= 125 °C
7)
r
T
T
j
= 125 °C
7)
V
CEsat
I
C
= 1470A,
T
j
= 125 °C
7)
V
CEsat
I
C
= 1470A,
T
j
= 25 °C
I =1470A,
V
CC
=600V
E
on
+ E
off5) C
V
CC
=900V
T
j
= 125 °C
C
per SKiiP, AC side
L
CE
top, bottom
R
CC´-EE´
resistance, terminal-chip
Inverse diode
2)
V
F
= V
EC
I
F
= 1350A;
T
j
= 125 °C
V
F
= V
EC
I
F
= 1350A;
T
j
= 25 °C
5)
E
on
+ E
off
I
F
= 1350A;
T
j
= 125 °C
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
Thermal characteristics
R
thjs
per IGBT
R
thjs
per diode
3)
R
thsa
L: P16 heat sink; 280 m
3
/ h
W: WK 40; 8l/min; 50% glycol
Current sensor
I
p RMS
T
a
=100° C , V
supply
=
±
15V
I
pmax RMS
t
2s
V
supply
≥ ±14,25V,
0≤I≤
±
700A,
Linearity
per sensor
I
ppeak
t
10 µs, per sensor
Mechanical data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
M3
to heat sink
6)
2,5
0,024
0,042
0,033
0,010
Features
SKiiP technology inside
-
pressure contact of ceramic
to heat sink; low thermal
impedance
-
pressure contact of main
electric terminals
-
pressure contact of auxiliary
electric terminals
-
increased thermal cycling
capability
-
low stray inductance
-
homogenous current
distribution
integrated current sensor
integrated temperature sensor
high power density
1)
2)
3)
4
8
3
6)
6
10
Nm
Nm
Nm
7)
8)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast)
D integrated gate driver
U with DC-bus voltage
measurement (option for GB)
L mounted on standard P16 for
forced air cooling
W mounted on standard water
cooler
T
term
= temperature of terminal
with SKiiPPACK 3
rd
generation
gate driver
assembly instruction must be
followed
measured at chip level
external paralleling necessary
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee,
expressed or implied is made regarding delivery, performance or suitability.
B 7
14
000911
by
SEMIKRON

SKIIP1813GB121-3DULW相似产品对比

SKIIP1813GB121-3DULW SKIIP1813GB121-3DLW SKIIP1813GB121-3DL SKIIP1813GB121-3DUL SKIIP1813GB121-3DUW SKIIP1813GB121-3DU SKIIP1813GB121-3DW
描述 Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A Half Bridge Based Peripheral Driver, 3000A
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
内置保护 TRANSIENT TRANSIENT TRANSIENT TRANSIENT TRANSIENT TRANSIENT TRANSIENT
接口集成电路类型 HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER HALF BRIDGE BASED PERIPHERAL DRIVER
JESD-30 代码 R-XXMA-X R-XXMA-X R-XXMA-X R-XXMA-X R-XXMA-X R-XXMA-X R-XXMA-X
JESD-609代码 e3/e4 e3/e4 e2 e3/e4 e3/e4 e3/e4 e3/e4
功能数量 3 3 3 3 3 3 3
输出电流流向 SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK SOURCE AND SINK
标称输出峰值电流 3000 A 3000 A 3000 A 3000 A 3000 A 3000 A 3000 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO NO
端子面层 TIN/SILVER TIN/SILVER Tin/Silver (Sn/Ag) TIN/SILVER TIN/SILVER TIN/SILVER TIN/SILVER
端子形式 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
端子位置 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1 1 1
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