Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN
| 参数名称 | 属性值 |
| 零件包装代码 | TO-3PF |
| 包装说明 | FLANGE MOUNT, R-PSFM-G3 |
| 针数 | 2 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 100 V |
| 最大漏极电流 (ID) | 10.4 A |
| 最大漏源导通电阻 | 0.3 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-G3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | GULL WING |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRFS9142 | IRFS9230 | IRFS9231 | IRFS9133 | IRFS9130 | IRFS9243 | IRFS9131 | IRFS9232 | IRFS9233 | IRFS9242 | |
|---|---|---|---|---|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 10.4A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 4.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 4.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.9A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.2A I(D), 150V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 8.3A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 3.8A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 3.8A I(D), 150V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Power Field-Effect Transistor, 6.2A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN |
| 零件包装代码 | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF | TO-3PF |
| 包装说明 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 | FLANGE MOUNT, R-PSFM-G3 |
| 针数 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 100 V | 200 V | 150 V | 60 V | 100 V | 150 V | 60 V | 200 V | 150 V | 200 V |
| 最大漏极电流 (ID) | 10.4 A | 4.5 A | 4.5 A | 6.9 A | 8.3 A | 6.2 A | 8.3 A | 3.8 A | 3.8 A | 6.2 A |
| 最大漏源导通电阻 | 0.3 Ω | 0.8 Ω | 0.8 Ω | 0.4 Ω | 0.3 Ω | 0.7 Ω | 0.3 Ω | 1.2 Ω | 1.2 Ω | 0.7 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 | R-PSFM-G3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 厂商名称 | - | - | - | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
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