Datasheet> 器件分类 > 分立半导体> 二极管> SFF2004GAC0

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SFF2004GAC0: 产品描述Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN; 产品类别分立半导体二极管; 文件大小392KB，共4页; 制造商Taiwan Semiconductor; 官网地址http://www.taiwansemi.com/; 标准

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SFF2004GAC0概述

Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN

SFF2004GAC0规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	R-PSFM-T3
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY, LOW POWER LOSS
应用	EFFICIENCY
外壳连接	ISOLATED
配置	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON
二极管类型	RECTIFIER DIODE
最大正向电压 (VF)	0.975 V
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e3
最大非重复峰值正向电流	150 A
元件数量	2
相数	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
最大输出电流	10 A
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
峰值回流温度（摄氏度）	NOT SPECIFIED
最大重复峰值反向电压	200 V
最大反向电流	10 µA
最大反向恢复时间	0.035 µs
表面贴装	NO
端子面层	MATTE TIN
端子形式	THROUGH-HOLE
端子位置	SINGLE
处于峰值回流温度下的最长时间	NOT SPECIFIED
Base Number Matches	1

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SFF2004GA thru SFF2008GA

Taiwan Semiconductor

CREAT BY ART

FEATURES

- High efficiency, low VF

- High current capability

- High reliability

- High surge current capability

- Low power loss

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

Isolated Glass Passivated Super Fast Rectifier

ITO-220AB

MECHANICAL DATA

Case:

ITO-220AB

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Terminal:

Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

Polarity:

As marked

Mounting torque:

5 in-lbs maximum

Weight:

1.7 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

=25℃ unless otherwise noted)

SFF

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

Peak forward surge current, 8.3 ms single half

sine-wave superimposed on rated load

Maximum instantaneous forward voltage (Note 1)

= 10 A

Maximum reverse current @ rated VR

Maximum reverse recovery time (Note 2)

Typical junction capacitance (Note 3)

Typical thermal resistance

Operating junction temperature range

Storage temperature range

Note 1: Pulse Test with PW=300μs, 1% Duty Cycle

Note 2: Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.

=25

℃

=125

℃

SYMBOL

RRM

RMS

F(AV)

FSM

Trr

θJC

STG

0.975

2004

200

140

200

SFF

2005

300

210

300

150

1.3

400

3.1

- 55 to +150

SFF

2006

400

280

400

SFF

2008

600

420

600

1.7

μA

C/W

UNIT

Document Number: DS_D1401003

Version: D14

SFF2004GAC0相似产品对比

	SFF2004GAC0	SFF2005GAC0G	SFF2005GAC0	SFF2004GAC0G	SFF2006GAC0G	SFF2006GAC0	SFF2008GAC0	SFF2008GAC0G
描述	Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN	Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, TO-220AB, ITO-220AB, 3 PIN
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
包装说明	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN	ITO-220AB, 3 PIN
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS	HIGH RELIABILITY, LOW POWER LOSS
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
外壳连接	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
配置	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS	COMMON ANODE, 2 ELEMENTS
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	0.975 V	1.3 V	1.3 V	0.975 V	1.3 V	1.3 V	1.7 V	1.7 V
JEDEC-95代码	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB
JESD-30 代码	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3	R-PSFM-T3
最大非重复峰值正向电流	150 A	150 A	150 A	150 A	150 A	150 A	150 A	150 A
元件数量	2	2	2	2	2	2	2	2
相数	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
最大输出电流	10 A	10 A	10 A	10 A	10 A	10 A	10 A	10 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
最大重复峰值反向电压	200 V	300 V	300 V	200 V	400 V	400 V	600 V	600 V
最大反向电流	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs
表面贴装	NO	NO	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE

SFF2004GAC0

SFF2004GAC0概述

SFF2004GAC0规格参数

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