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PUB4114

产品描述Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
产品类别分立半导体    晶体管   
文件大小84KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
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PUB4114概述

Power Bipolar Transistor, 7A I(C), 20V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PUB4114规格参数

参数名称属性值
零件包装代码SIP
包装说明SIP-10
针数10
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)7 A
集电极-发射极最大电压20 V
配置COMMON EMITTER, 4 ELEMENTS
最小直流电流增益 (hFE)60
JESD-30 代码R-PSIP-T10
元件数量4
端子数量10
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)150 MHz
Base Number Matches1

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Power Transistor Arrays
PUB4114
(PU4114)
Silicon NPN triple diffusion planar type
For power amplification and switching
Complementary to PUB4214 (PU4214)
Features
Low collector-emitter saturation voltage V
CE(sat)
High-speed switching
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
NPN 4 elements
9.5
±0.2
8.0
±0.2
Unit: mm
25.3
±0.2
4.0
±0.2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
9
×
2.54 = 22.86
±0.25
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
40
20
5
7
12
15
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
0.5
±0.15
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Turn-on time
Storage time
Fall time
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
Conditions
I
C
=
10 mA, I
B
=
0
V
CB
=
40 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
2 V, I
C
=
0.1 A
V
CE
=
2 V, I
C
=
2 A
I
C
=
5 A, I
B
=
0.16 A
I
C
=
5 A, I
B
=
0.16 A
V
CE
=
10 V, I
C
=
0.5 A, f
=
10 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
I
C
=
2 A
I
B1
=
66 mA, I
B2
= −66
mA
150
110
0.3
0.3
0.1
45
60
260
0.6
1.5
V
V
MHz
pF
µs
µs
µs
Min
20
50
50
Typ
Max
Unit
V
µA
µA
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Internal Connection
3
2
1
4
5
6
7
8
10
9
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
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