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PU4422P

产品描述Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
产品类别分立半导体    晶体管   
文件大小93KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
下载文档 详细参数 选型对比 全文预览

PU4422P概述

Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10

PU4422P规格参数

参数名称属性值
零件包装代码SIP
包装说明IN-LINE, R-PSIP-T10
针数10
Reach Compliance Codeunknown
ECCN代码EAR99
最大集电极电流 (IC)4 A
集电极-发射极最大电压25 V
配置COMPLEX
最小直流电流增益 (hFE)2000
JESD-30 代码R-PSIP-T10
元件数量4
端子数量10
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置SINGLE
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)20 MHz
Base Number Matches1

文档预览

下载PDF文档
Power Transistor Arrays
PUB4122
(PU4122)
, PUB4422
(PU4422)
Silicon NPN triple diffusion planar type darlington
For power amplification
Features
Built-in zener diode (30 V) between collector and base
Small variation in withstand pressure
Large energy handling capability E
s/b
High-speed switching
PUB4122 (PU4122): NPN 4 elements
PUB4422 (PU4422): NPN 2 elements
×
2
25.3
±0.2
Unit: mm
4.0
±0.2
9.5
±0.2
8.0
±0.2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
9
×
2.54 = 22.86
±0.25
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
30±5
30±5
5
4
8
15
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.5
±0.15
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *1
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b
Conditions
I
C
=
5 mA, I
B
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*2
I
C
=
3 A, I
B
=
12 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A
I
B1
=
12 mA, I
B2
= −12
mA
V
CC
=
20 V
I
C
=
2 A, L
=
100 mH, R
BE
=
100
200
20
0.3
3.0
1.0
1 000
1 000
10 000
2.0
4.0
2.5
V
MHz
µs
µs
µs
mJ
V
Min
25
Typ
Max
35
100
2
Unit
V
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00065AED
1

PU4422P相似产品对比

PU4422P PUB4122Q PUB4122P PUB4122 PU4122P PU4122Q
描述 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10 Power Bipolar Transistor, 4A I(C), 25V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, SIP-10
零件包装代码 SIP SIP SIP SIP SIP SIP
包装说明 IN-LINE, R-PSIP-T10 SIP-10 SIP-10 SIP-10 IN-LINE, R-PSIP-T10 IN-LINE, R-PSIP-T10
针数 10 10 10 10 10 10
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
最大集电极电流 (IC) 4 A 4 A 4 A 4 A 4 A 4 A
集电极-发射极最大电压 25 V 25 V 25 V 25 V 25 V 25 V
配置 COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX COMPLEX
最小直流电流增益 (hFE) 2000 1000 2000 1000 2000 1000
JESD-30 代码 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10 R-PSIP-T10
元件数量 4 4 4 4 4 4
端子数量 10 10 10 10 10 10
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
极性/信道类型 NPN NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz 20 MHz
Base Number Matches 1 1 1 1 - -
厂商名称 - Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下) Panasonic(松下)
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