SBB3089Z
50MHz to 6000MHz InGaP HBT ACTIVE BIAS
GAIN BLOCK
Package: SOT-89
Product Description
RFMD’s SBB3089Z is a high performance InGaP HBT MMIC amplifier uti-
lizing a Darlington configuration with an active bias network. The active
bias network provides stable current over temperature and process Beta
variations. The SBB3089Z product is designed for high linearity 5V gain
block applications that require excellent gain flatness, small size, and min-
imal external components. It is internally matched to 50.
Gain and Return Loss V
S
= 5V, I
S
= 42mA
Features
Single Fixed 5V Supply
Patented Self Bias Circuit and
Thermal Design
Gain=16.4dBm at 1950MHz
P
1dB
=15.2dBm at 1950MHz
OIP
3
=29.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Wideband Instrumentation
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si BJT
GaN HEMT
InP HBT
RF MEMS
LDMOS
SiGe BiCMOS
30
20
10
S21
Applications
Bias Tee Data, Z
S
= Z
L
= 50 Ohms, T
L
= 25C
dB
0
-10
S11
-20
-30
0
1
2
3
4
5
6
S22
Si CMOS
Frequency (GHz)
Parameter
Small Signal Gain
Min.
15.1
14.9
Specification
Typ.
16.6
16.4
16.3
15.6
15.2
15.4
30.0
29.5
29.5
21
25.5
3.9
4.2
42
Max.
18.1
17.9
Unit
Condition
dB
850MHz
dB
1950MHz
dB
2400MHz
Output Power at 1dB Compression
dBm
850MHz
14.2
dBm
1950MHz
dBm
2400MHz
Output Third Order Intercept Point
dBm
850MHz
27.5
dBm
1950MHz
dBm
2400MHz
Input Return Loss
16
dB
1950MHz
Output Return Loss
19
dB
1950MHz
Noise Figure
4.9
dB
1950MHz
Device Operating Voltage
4.3
V
R
DC
=20, V
S
=5.0V
Device Operating Current
38
46
mA
R
DC
=20, V
S
=5.0V
Operational Current Range
30
46
mA
Per user preference via R
DC
Thermal Resistance
80
°C/W
Junction to lead
Test Conditions: V
D
=4.2V, I
D
=42mA, T
L
=25°C , OIP
3
Tone Spacing=1MHz, R
DC
=20, Bias Tee Data, Z
S
=Z
L
=50, P
OUT
per tone=-5dBm
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 5
SBB3089Z
Absolute Maximum Ratings
Parameter
Max Device Current (l
D
)
Max Device Voltage (V
D
)
Max RF Input Power* (See Note)
Max Junction Temperature (T
J
)
Operating Temperature Range (T
L
)
Max Storage Temperature
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
Rating
100
6
+20
+150
-40 to +85
+150
Class 1C
MSL 2
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
*Note: Load condition Z
L
=50
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current
must not exceed the maximum operating values specified in the table on
page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=T
LEAD
Typical RF Performance at Key Operating Frequencies (Bias Tee Data)
Parameter
Small Signal Gain
Output Third Order Intercept Point
Output Power at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
Unit
dB
dBm
dBm
dB
dB
dB
dB
100
MHz
16.9
29.5
15.6
24.0
21.5
19.5
3.7
500
MHz
16.6
30.5
16.0
26.5
26.0
19.0
3.9
850
MHz
16.6
30.0
15.6
24.5
26.0
19.5
3.9
1950
MHz
16.4
29.5
15.2
21.0
25.5
19.5
3.9
2140
MHz
16.4
29.0
15.0
20.5
25.5
19.5
3.9
2400
MHz
16.3
29.5
15.4
20.0
27.5
19.5
4.0
3500
MHz
16.1
27.0
15.2
15.5
21.0
19.5
3.8
Test Conditions: V
D
=4.2V I
D
=42mA OIP
3
Tone Spacing=1MHz, P
OUT
per tone=-5dBm R
DC
=20 T
L
=25°C Z
S
=Z
L
=50
Typical Performance with Bias Tees, V
D
=5V with R
DC
=20, I
D
=42mA
34.0
OIP3 versus Frequency,
(-5dBm/tone, 1MHz spacing)
P1dB versus Frequency
20.0
32.0
18.0
30.0
P1dB (dBm)
25°C
-40°C
85°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
OIP3 (dBm)
16.0
28.0
14.0
26.0
12.0
25°C
-40°C
85°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
24.0
10.0
Frequency (GHz)
Frequency (GHz)
2 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718
SBB3089Z
Typical Performance with Bias Tees, V
S
=5V, R
DC
=20, I
D
=42mA
S11 versus Frequency
0.0
-5.0
-10.0
-15.0
-20.0
-25.0
-30.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
20.0
S21 versus Frequency
18.0
Gain (dB)
25C
-40C
85C
S11 (dB)
16.0
14.0
12.0
10.0
0.0
1.0
2.0
3.0
4.0
5.0
25C
-40C
85C
6.0
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
0.0
-5.0
-10.0
0.0
-5.0
-10.0
S22 versus Frequency
S12 (dB)
S22 (dB)
25C
-40C
85C
0.0
1.0
2.0
3.0
4.0
5.0
6.0
-15.0
-20.0
-25.0
-30.0
-15.0
-20.0
-25.0
-30.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
25C
-40C
85C
Frequency (GHz)
Frequency (GHz)
NF versus Frequency
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
100.0
90.0
80.0
70.0
DCIV
NF (dB)
ID (mA)
60.0
50.0
40.0
30.0
25°C
85°C
20.0
10.0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-40°C
25°C
85°C
5.0
5.5
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 5
SBB3089Z
Application Schematic
Vs
R
DC
.1uF
1000pF
L1
4
RF IN
1
C1
Application Circuit Element Values
SBB-3089Z
3
C2
RF OUT
2
Reference Designator
C1
C2
L1
500MHz to 3500MHz
1000pF
68pF
48nH 0805HQ Coilcraft
Evaluation Board Layout
Mounting Instructions
1. Solder the copper pad on the backside of the device package to the ground plane.
2. Use a large ground pad area with many plated through-holes as shown.
3. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31mm thick FR-4 board with 1
ounce copper on both sides.
Recommended Bias Resistor Values for I
D
=42mA R
DC
=(V
S
-V
D
)/I
D
Supply Voltage (V
S
)
R
DC
5V
20
6V
43
8V
91
10V
139
12V
187
4 of 5
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS130718
SBB3089Z
Pin
1
2, 4
3
Function
RF IN
GND
RF OUT/
DC BIAS
Description
RF input pin.This pin requires the use of an external DC blocking capacitor chosen for the frequency of opera-
tion.
Connection to ground. Use via holes as close to the device ground leads as possible to reduce ground induc-
tance and achieve optimum RF performance.
RF output and bias pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency
of operation.
Part Identification
Suggested Pad Layout
Package Drawing
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
Ordering Information
Ordering Code
SBB3089Z
SBB3089ZSQ
SBB3089ZSR
SBB3089ZPCK1
Description
7” Reel with 1000 pieces
Sample bag with 25 pieces
7” Reel with 100 pieces
500MHz to 3500MHz PCBA with 5-piece sample bag
DS130718
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
5 of 5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
