Semiconductor
STK1040F
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
•
High Voltage: BV
DSS
=400V(Min.)
•
Low C
rss
: C
rss
=12pF(Typ.)
•
Low gate charge : Qg=28nc(Typ.)
•
Low R
DS(on)
:R
DS(on)
=0.53Ω(Max.)
G
Type No.
SMK1040F
Marking
SMK1040
Package Code
TO-220F-3L
PIN Connection
D
GDS
TO-220F-3L
S
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (Pulsed)
*
(Tc=25°C)
Symbol
V
DSS
V
GSS
I
D
(Tc=25℃)
(Tc=100℃)
I
DM
P
D
②
②
①
①
I
AS
E
AS
I
AR
E
AR
T
J
T
stg
Rating
400
±30
10
5.5
40
40
10
360
10
8.5
150
-55~150
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
Drain power dissipation
Avalanche current (Single)
Single pulsed avalanche energy
Avalanche current (Repetitive)
Repetitive avalanche energy
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R
th(J-C)
R
th(J-a)
Typ.
-
-
Max
3.12
62.5
Unit
℃/W
KSD-T0O009-003
1
STK1040F
Electrical Characteristics
Characteristic
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
④
④
(Tc=25°C)
Symbol
BV
DSS
V
GS(th)
I
DSS
I
GSS
R
DS(ON)
g
fs
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Test Condition
I
D
=250μA, V
GS
=0
I
D
=250μA, V
DS
= V
GS
V
DS
=400V, V
GS
=0V
V
DS
=0V, V
GS
=±30V
V
GS
=10V, I
D
=5.0A
V
DS
=10V, I
D
=5.0A
V
GS
=0V, V
DS
=25V
f=1MHz
Min.
400
2.0
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.46
6.2
950
120
12
14
89
81
81
28
4
15
Max.
-
4.0
1
±100
0.53
-
1430
180
18
-
-
-
-
42
6
23
Unit
V
V
μA
nA
Ω
S
pF
V
DD
=200V, I
D
=10A
R
G
=25Ω
-
③
④
V
DS
=200V, V
GS
=10V
I
D
=10A
-
-
-
ns
③
④
-
-
nC
Source-Drain Diode Ratings and Characteristics
Characteristic
Source current (DC)
Source current (Pulsed)
Forward voltage
Reverse recovery time
Reverse recovery charge
①
④
(Tc=25°C)
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Test Condition
Integral reverse diode
in the MOSFET
V
GS
=0V, I
S
=10A
I
s
=10A, V
GS
=0,
di
S
/dt=100A/ us
Min
-
-
-
-
-
Typ
-
-
-
290
5.04
Max
10
40
1.4
-
-
Unit
A
V
ns
uC
Note ;
①
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
②
L=6.6mH, I
AS
=10A, V
DD
=50V, R
G
=27Ω
③
Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2%
④
Essentially independent of operating temperature
KSD-T0O009-003
2
STK1040F
Electrical Characteristic Curves
Fig. 1 I
D
- V
DS
℃
Fig. 2 I
D
- V
GS
:
-
Fig. 3 R
DS(on)
- I
D
℃
Fig. 4 I
S
- V
SD
Fig. 5 Capacitance - V
DS
Fig. 6 V
GS
- Q
G
℃
KSD-T0O009-003
3
STK1040F
Fig. 7 V
DSS
- T
J
Fig. 8 R
DS(on)
- T
J
C
C
Fig. 9
I
D
- T
C
Fig. 10 Safe Operating Area
*
KSD-T0O009-003
4
STK1040F
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS
Test Circuit & Waveform
KSD-T0O009-003
5
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