MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF6401/D
The RF Line
NPN Silicon
RF Power Transistor
The MRF6401 is designed for Class A common emitter, linear power
amplifiers in the 1.0–2.0 GHz frequency range. It has been specifically
designed for use in Personal Communications Network (PCN) base station and
INMARSAT Standard M applications.
•
Specified 20 Volts, 1.66 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 10 dB Min
Class A Operation
MRF6401
0.5 W, 1.0 to 2.0 GHz
RF LINEAR
POWER TRANSISTOR
ARCHIVE INFORMATION
CASE 305C–02, STYLE 1
SOE200–PILL
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Operating Junction Temperature
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
T
J
P
D
T
stg
Value
22
45
3.5
200
5.8
0.033
–65 to +150
Unit
Vdc
Vdc
Vdc
°C
Watts
W/°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
θJC
Max
30
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= 10 mAdc, R
B
= 75
Ω)
Emitter–Base Breakdown Voltage
(I
E
= 0.25 mAdc)
Collector–Base Breakdown Voltage
(I
C
= 1 mAdc)
V
(BR)CER
V
(BR)EBO
V
(BR)CBO
28
3.5
45
—
—
—
—
—
—
Vdc
Vdc
Vdc
(1) Thermal resistance is determined under specified RF operating condition.
REV 2
MOTOROLA RF
Motorola, Inc. 1998
DEVICE DATA
MRF6401
1
ARCHIVE INFORMATION
•
Specified 20 Volts, 1.88 GHz Characteristics:
Output Power — 0.5 Watts
Gain — 9.0 dB Min
Class A Operation
ELECTRICAL CHARACTERISTICS — continued
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(I
C
= 0.1 Adc, V
CE
= 5 Vdc)
h
FE
20
—
120
—
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 26 V, I
E
= 0, f = 1 MHz)
C
ob
—
1.4
—
pF
FUNCTIONAL TESTS
(V
CC
= 20 V, I
CQ
= 80 mA)
Common–Emitter Amplifier Power Gain
(f = 1660 MHz, P
out
= 0.5 W)
(f = 1880 MHz, P
out
= 0.5 W)
Load Mismatch
(f = 1660 MHz, f = 1880 MHz, P
out
= 0.5 W,
Load VSWR = 20:1, all phase angles at frequency of test)
Intermodulation Distortion
(P
out
= 0.5 W PEP, f1 = 1659.2 MHz, f2 = 1660 MHz)
(P
out
= 0.5 W PEP, f1 = 1879.2 MHz, f2 = 1880 MHz)
G
p
10
9
ψ
IMD
–30
–30
–35
–35
—
—
11
10
—
—
dB
No Degradation in Output Power
dBc
ARCHIVE INFORMATION
R4
R5
R6
R7
Q1
+
-
V
CC
R2
R3
R8
C9
C4
TL10
TL4
TL5
RF
INPUT
TL1
TL2
C1
TL3
TL4
TP1
DUT
TL8
TL6
TL7
C2
TL9
RF
OUTPUT
C3
C10
C5
C6
TL11
C7
C8
C1
C2
C3
C4, C6, C7, C9
C5
C8
C10
C11
Q1
1.5 pF, ATC Chip Capacitor 100A
3.9 pF, ATC Chip Capacitor 100A
56 pF, ATC Chip Capacitor 100A
15 nF, Chip Capacitor 0805
47 pF, ATC Chip Capacitor 100A
4.7
µF,
35 V, Capacitor
10
µF,
16 V, Capacitor
100 pF, ATC Chip Capacitor 100A
Transistor, BCV62
R2
R3
R4
R5
R6
R7, R8
TL1 to TL11
TP1
470
Ω,
Chip Resistor 0805
4.7 kΩ, Chip Resistor 0805
8.2 kΩ, Chip Resistor 0805
5 kΩ, SMD Potentiometer
680
Ω,
Chip Resistor 0805
7.5
Ω,
Chip Resistor 0805
µStrip
Lines; See Photomaster
Document, MRF6401PHT/D
µStrip
Taper; See Photomaster
Document, MRF6401PHT/D
Figure 1. 1600–2000 MHz Broadband Application Amplifier Schematic
MRF6401
2
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
TYPICAL CHARACTERISTICS
1000
Pout , OUTPUT POWER (mW)
800
600
400
200
V
CC
= 20 V
I
C
= 80 mA
f = 1880 MHz
0
20
40
60
P
in
, INPUT POWER (mW)
80
100
ARCHIVE INFORMATION
Figure 2. Output Power versus Input Power
40
10
Pout , OUTPUT POWER (dBm)
GAIN, RETURN LOSS (dB)
20
0
5
0
-5
-10
-15
-20
1500
S22
1600
1700
1800
1900
f, FREQUENCY (MHz)
2000
S11
S11
S22
V
CC
= 20 V
P
in
= 10 dBm
I
C
= 80 mA
S21
-20
-40
-60
V
CC
= 20 V
I
C
= 80 mA
f = 1880 MHz
800 kHz TONE SEPARATION
0
5
10
15
20
P
in
, INPUT POWER (dBm)
25
2100
Figure 3. Third Order Intercept
Figure 4. Performance in Broadband Test Fixture
MOTOROLA RF DEVICE DATA
MRF6401
3
ARCHIVE INFORMATION
Table 1. Common Emitter S–Parameters
V
CC
= 20 V, I
C
= 80 mA
POLAR S–PARAMETERS IN 50
Ω
SYSTEM
f
MHz
100
200
400
600
800
1000
1200
1400
S
11
|S
11
|
0.626
é
φ
–118
S
21
|S
21
|
é
φ
28.4
17.1
9.10
6.15
4.65
3.73
3.13
2.60
2.30
2.06
1.98
1.88
127
106
88
77
68
60
52
44
39
32
29
25
S
12
|S
12
|
0.0186
0.0230
0.0271
0.0312
0.0359
0.0409
0.0469
0.0490
0.0574
0.0665
0.0714
0.0756
é
φ
45
35
35
38
42
44
44
46
50
49
48
48
S
22
|S
22
|
0.649
0.434
0.303
0.272
0.266
0.271
0.286
0.291
0.288
0.303
0.312
0.322
é
φ
–40
–49
–53
–56
–62
–68
–75
–87
–93
–97
–100
–103
V
CC
f
MHz
100
200
400
600
800
1000
1200
1400
1600
1800
1900
2000
S
11
|S
11
|
0.618
é
φ
–113
V
CC
= 20 V, I
C
= 50 mA
POLAR S–PARAMETERS IN 50
Ω
SYSTEM
S
21
|S
21
|
é
φ
26.2
16.2
8.78
5.94
4.49
3.61
3.02
2.52
2.22
2
1.91
1.81
130
108
S
12
|S
12
|
0.0195
0.0251
é
φ
45
34
32
35
39
41
42
45
48
48
47
47
S
22
|S
22
|
0.678
0.465
0.331
0.297
0.290
0.294
0.310
0.313
0.311
0.328
0.335
0.345
é
φ
–36
–47
–51
–55
–61
–68
–75
–87
–92
–97
–101
–104
0.718 –149
0.754 –171
0.761
0.762
0.763
0.758
0.753
0.765
0.769
0.768
0.767
179
171
165
159
155
150
144
142
139
0.713 –145
0.758 –168
0.763
0.761
0.764
0.758
0.757
0.768
0.772
0.770
0.772
180
169
166
160
155
150
145
142
140
89.2 0.0288
78
68
60
52
0.0323
0.0363
0.0415
0.0467
44.5 0.0486
39
32
28
25
0.0566
0.0655
0.0705
0.0745
ARCHIVE INFORMATION
1600
1800
1900
2000
GND
(SCALE 1:1)
TEFLON
GLASS 0.508 MM 2 SIDES 35
µm
Cu
Figure 5. MRF6401 Photomaster
(Reduced 25% in printed data book, DL110/D)
GND
C9
R4 R5 R6
R7
R8
Q1
C5 C6
+ V
CC
C10
R2
R3
C8
C7
C4
C11
C3
C2
C1
Figure 6. Test Circuit Components Layout
MRF6401
4
MOTOROLA RF DEVICE DATA
ARCHIVE INFORMATION
ÎÎÎ
ÎÎÎ
ÎÎ
ÎÎ
ÎÎÎÎ
PACKAGE DIMENSIONS
K
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
2
4
F
3
D
DIM
A
C
D
F
H
J
K
INCHES
MIN
MAX
0.200
0.210
---
0.125
0.120
0.130
0.025
0.035
0.035
0.045
0.004
0.006
0.970
1.030
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.08
5.33
---
3.17
3.05
3.30
0.64
0.88
0.88
1.14
0.11
0.15
24.64
26.16
A
ARCHIVE INFORMATION
C
J
H
CASE 305C–02
ISSUE A
MOTOROLA RF DEVICE DATA
MRF6401
5
ARCHIVE INFORMATION
EMITTER
BASE
EMITTER
COLLECTOR
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
