MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRFIC0903/D
The MRFIC Line
Broadband GaAs Switch
The MRFIC0903 is an integrated GaAs SPDT switch designed for
transceivers operating in the 100 MHz to 2.0 GHz frequency range. The design
utilizes Motorola’s advanced GaAs RF process to yield superior performance in
a cost effective monolithic device. Applications for the MRFIC0903 include
Class 4 and 5 GSM, Class 1 and 2 DCS1800, DCS1900, DAMPS, PDC, digital
cellular systems as well as analog cellular systems.
•
2.8 W Transmitting Capability through the Transmit Path with a 5.0 Volt
Differential Control Signal
•
1.25 W Transmitting Capability through the Transmit Path with a 3.0 Volt
Differential Control Signal
•
Single Source Operating Supply Voltage
•
Low Power Consumption
•
Low–Cost, Low Profile Plastic SOIC Package
•
Available in Tape and Reel by Adding R2 Suffix.
R2 Suffix = 2,500 Units per Reel.
•
Device Marking = M0903
MRFIC0903
ANTENNA SWITCH
GaAs MONOLITHIC
INTEGRATED CIRCUIT
CASE 751–05
(SO–8)
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Supply Voltage
Control Voltage
Power Dissipation
Power Input (Non–selected Port)
Ambient Operating Temperature
Storage Temperature
Symbol
VDD
VC1, VC2
PD
Pin
TA
Tstg
Value
10
VDD + 0.8, VDD – 12
1.0
0.325
– 35 to + 85
– 65 to +150
Unit
Vdc
Vdc
W
W
°C
°C
RF2
1
8
VC2
GND
2
7
RFC
GND
3
6
VDD
RF1
4
5
VC1
Pin Connections and Functional Block Diagram
REV 1
MOTOROLA RF
©
Motorola, Inc. 1997
DEVICE DATA
MRFIC0903
1
RECOMMENDED OPERATING RANGES
Parameter
Supply Voltage
Control Voltage Range
RF Frequency Range
Symbol
VDD
VC1, VC2
fRF
Value
0 to 5.0
VDD – 5.0 to VDD + 0.5
100 to 2000
Unit
Vdc
Vdc
MHz
ELECTRICAL CHARACTERISTICS
(VDD = 5.0 V, Pin = 2.5 W (34 dBm), f = 900 MHz, TA = 25°C unless otherwise noted)
Characteristic
Supply Current
IDD
IControl
VSWR
Insertion Loss (RFC/RF1, RFC/RF2)
Isolation (RFC/RF2, RFC/RF1)
Output Power at 0.1 dB Compression
Min
—
—
—
—
18
—
Typ
100
150
1.5:1
0.55
20
34.5
Max
170
300
—
0.8
—
—
Unit
µA
µA
dB
dB
dBm
Electrical Characteristics at 900 MHz measured in test circuit schematic shown in Figure 1 with board losses removed.
ELECTRICAL CHARACTERISTICS
(VDD = 5.0 V, Pin = 2.0 W (33 dBm), f = 1800 MHz, TA = 25°C unless otherwise noted)
Characteristic
Supply Current
IDD
IControl
VSWR
Insertion Loss (RFC/RF1, RFC/RF2)
Isolation (RFC/RF2, RFC/RF1)
Output Power at 0.1 dB Compression
Min
—
—
—
—
18
—
Typ
100
150
1.5:1
0.7
20
34
Max
170
300
—
0.85
—
—
Unit
µA
µA
dB
dB
dBm
Electrical Characteristics at 1800 MHz measured in test circuit schematic shown in Figure 2 with board losses removed.
VC1 and VC2 Input Voltage
High
Low
VC1
High
Low
Min
VDD
VDD – 10
VC2
Low
High
Typ
—
—
RFC – RF1
Insertion Loss
Isolation
Max
VDD + 0.5
VDD – 5
Unit
Vdc
Vdc
RFC – RF2
Isolation
Insertion Loss
Table 1. Logic Levels
MRFIC0903
2
MOTOROLA RF DEVICE DATA
VC1
+
–
5
C1
4
TL1
C2
RF1
50
Ω
VDD
+
–
6
C3
DUT
3
RFC
50
Ω
7
C4
TL2
2
VC2
+
–
8
C5
1
TL3
C6
RF2
50
Ω
C1, C5 — 2.7 pF, Chip Capacitor
C2, C4, C6 — 100 pF, Chip Capacitor
C3 — 10 pF, Chip Capacitor
TL1, TL3 — 12 degrees of 50
Ω
line at 1 GHz
TL2 — 15 degrees of 50
Ω
line at 1 GHz
Note: Decoupling capacitors on pins 5, 6 and 8 must be as close as possible to the pins.
Figure 1. 300 MHz to 1600 MHz Test Circuit Configuration
VC1
+
–
5
C1
4
TL1
C2
RF1
50
Ω
VDD
+
–
6
C3
DUT
3
RFC
50
Ω
7
C4
TL2
2
VC2
+
–
8
C5
1
TL3
C6
RF2
50
Ω
C1, C5 — 1.3 pF, Chip Capacitor
C2, C3, C4, C6 — 8.2 pF, Chip Capacitor
TL1, TL3 — 12 degrees of 50
Ω
line at 1 GHz
TL2 — 15 degrees of 50
Ω
line at 1 GHz
Note: Decoupling capacitors on pins 5, 6 and 8 must be as close as possible to the pins.
Figure 2. 1600 MHz to 2000 MHz Test Circuit Configuration
MOTOROLA RF DEVICE DATA
MRFIC0903
3
TYPICAL CHARACTERISTICS
1
22
IL, INSERTION LOSS (dB)
0.8
TA = 25°C
0.6
85°C
0.4
– 35°C
0.2
f = 900 MHz
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
20
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
ISOL, ISOLATION (dB)
21.5
TA = 25, 85°C
– 35°C
20.5
f = 900 MHz
10
21
Figure 3. Insertion Loss at 0.1 dB
Compression versus Supply Voltage
Figure 4. Isolation at 0.1 dB
Compression versus Supply Voltage
37
– 35°C
Pin, INPUT POWER (dBm)
35
85°C
33
TA = 25°C
Pout , OUTPUT POWER (dBm)
37
85°C
35
– 35°C
33
TA = 25°C
31
31
29
f = 900 MHz
27
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
29
f = 900 MHz
27
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 5. Input Power at 0.1 dB
Compression versus Supply Voltage
Figure 6. Output Power at 0.1 dB
Compression versus Supply Voltage
1
P DISS , DISSIPATED POWER (W)
0.3
IDD , SUPPLY CURRENT (mA)
0.4
0.75
TA = 25°C
0.5
– 35°C
0.25
85°C
0.3
– 35°C
0.2
TA = 25°C
0.1
85°C
f = 900 MHz
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 7. Dissipated Power at 0.1 dB
Compression versus Supply Voltage
Figure 8. Supply Current at 0.1 dB
Compression versus Supply Voltage
MRFIC0903
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
2
Ivc, CONTROL CURENT (mA)
1
85°C
IL, INSERTION LOSS (dB)
1.5
TA = – 35° to + 85°C
1
0.8
TA = 25°C
0.6
0.4
– 35°C
0.5
0.2
f = 1800 MHz
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 9. Control Current at Vc Pins at 0.1 dB
Compression versus Supply Voltage
Figure 10. Insertion Loss at 0.1 dB
Compression versus Supply Voltage
37
TA = 25°C
23
85°C
ISOL, ISOLATION (dB)
22
TA = 25°C
21
Pin, INPUT POWER (dBm)
35
– 35°C
33
31
85°C
29
– 35°C
20
f = 1800 MHz
19
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
f = 1800 MHz
27
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 11. Isolation at 0.1 dB
Compression versus Supply Voltage
37
P DISS , DISSIPATED POWER (W)
TA = 25°C
– 35°C
33
85°C
1
Figure 12. Input Power at 0.1 dB
Compression versus Supply Voltage
Pout , OUTPUT POWER (dBm)
35
0.75
85°C
TA = 25°C
0.5
31
– 35°C
0.25
f = 1800 MHz
29
f = 1800 MHz
27
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
0
2.5
5
7.5
VDD, SUPPLY VOLTAGE (VOLTS)
10
Figure 13. Output Power at 0.1 dB
Compression versus Supply Voltage
Figure 14. Dissipated Power at 0.1dB
Compression versus Supply Voltage
MOTOROLA RF DEVICE DATA
MRFIC0903
5
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