1300 nm Laser in Receptacle Package,
Low Power
STL 51007X
•
•
•
•
Designed for application in fiber-optic networks
Laser diode with Multi-Quantum Well structure
Suitable for bit rates up to 1 Gbit/s
Ternary photodiode at rear mirror for monitoring and
control of radiant power
•
Hermetically sealed subcomponents, similar to TO 18
•
SM Receptacle with 2- hole flange
Type
STL 51007G
Ordering Code
Q62702-P3004
Connector/Flange
FC, 2-hole
Maximum Ratings
Output power ratings refer to the SM fiber output. The operating temperature of the
submount is identical to the case temperature.
Parameter
Module
Operating temperature range at case
Storage temperature range
Soldering temperature
t
max
= 10 s, 2 mm distance from bottom edge of
case
Laser Diode
Direct forward current
Radiant power CW
Reverse voltage
Monitor Diode
Reverse voltage
Symbol
Values
Unit
T
C
T
stg
T
S
−
40
…
+ 85
−
40
…
+ 85
260
°C
°C
°C
I
F max
Φ
e
120
1
2
mA
mW
V
V
R max
V
R max
10
V
Semiconductor Group
1
02.95
STL 51007X
Characteristics
All optical data refer to a coupled 10/125
µm
SM fiber,
T
C
= 25 °C.
Parameter
Laser Diode
Optical output power
Emission wavelength center of range
Φ
e
= 0.2 mW
Spectral bandwidth
Φ
e
= 0.2 mW (RMS)
Threshold current (− 40
…
+ 85 °C)
Forward voltage
Φ
e
= 0.2 mW
Radiant power at threshold
Slope efficiency
Differential series resistance
Rise time/fall time
Monitor Diode
Dark current,
V
R
= 5 V,
Φ
e
= 0
Photocurrent,
Φ
e
= 0.2 mW
Φ
e
λ
∆λ
> 0.4
1280
…
1330
<5
2
…
45
< 1.5
< 10
8
…
60
<8
<1
mW
nm
nm
mA
V
µW
mW/A
Ω
ns
Symbol
Values
Unit
I
th
V
F
Φ
eth
η
r
S
t
R
,
t
F
I
R
I
P
< 500
100
…
1000
nA
µA
Semiconductor Group
2
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