AUTOMOTIVE GRADE
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
AUIRFZ44NS
AUIRFZ44NL
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max.
I
D
D
D
55V
17.5m
49A
Description
Specifically designed for Automotive applications, this HEXFET
®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
Base part number
AUIRFZ44NL
AUIRFZ44NS
Package Type
TO-262
D
2
-Pak
S
G
D Pak
AUIRFZ44NS
2
G
TO-262
AUIRFZ44NL
S
D
G
Gate
D
Drain
S
Source
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRFZ44NL
AUIRFZ44NS
AUIRFZ44NSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
C
= 25°C
V
GS
E
AS (Thermally Limited)
E
AS (Tested)
I
AR
E
AR
dv/dt
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy (Tested Limited)
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
49
35
160
3.8
94
0.63
± 20
150
530
25
9.4
5.0
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount), D
2
Pak
Typ.
–––
–––
Max.
1.5
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2015-10-27
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Trans conductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
Min.
55
–––
–––
2.0
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
60
44
45
4.5
7.5
1470
360
88
–––
17.5
4.0
–––
25
250
100
-100
63
14
23
–––
–––
–––
–––
V
0.058 –––
AUIRFZ44NS/L
Conditions
V
GS
= 0V, I
D
= 250µA
V/°C Reference to 25°C, I
D
= 1mA
m V
GS
= 10V, I
D
= 25A
V
S
µA
nA
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 25A
V
DS
= 55V, V
GS
= 0V
V
DS
= 44V,V
GS
= 0V,T
J
=150°C
V
GS
= 20V
V
GS
= -20V
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
D
= 25A
nC
V
DS
= 44V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 28V
I
D
= 25A
ns
R
G
= 12
V
GS
= 10V, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
from package
–––
and center of die contact
–––
V
GS
= 0V
pF V
DS
= 25V
–––
ƒ = 1.0MHz, See Fig. 5
–––
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 25A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 25A
nC di/dt = 100A/µs
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Typ. Max. Units
–––
–––
–––
63
170
49
160
1.3
95
260
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.48mH, R
G
= 25, I
AS
= 25A, V
GS
=10V. (See fig.12)
I
SD
25A,
di/dt
230A/µs,
V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400µs;
duty cycle
2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
2
2015-10-27
AUIRFZ44NS/L
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
1000
2.5
I
D
= 41A
I
D
, Drain-to-Source Current (A)
2.0
100
T
J
= 25°C
T
J
= 175°C
1.5
1.0
10
0.5
1
4
5
6
7
V
DS
= 25V
20µs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= 10V
80 100 120 140 160 180
A
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature
3
2015-10-27
AUIRFZ44NS/L
2500
2000
V
GS
, Gate-to-Source Voltage (V)
C
iss
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= 25A
V
DS
= 44V
V
DS
= 28V
16
C, Capacitance (pF)
1500
C
oss
1000
12
8
500
C
rss
4
0
1
10
100
A
0
0
10
20
30
FOR TEST CIRCUIT
SEE FIGURE 13
40
50
60
70
A
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
10µs
T
J
= 175°C
100µs
10
10
T
J
= 25°C
1ms
1
0.5
1.0
1.5
2.0
V
GS
= 0V
2.5
A
3.0
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
A
V
SD
, Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
2015-10-27
AUIRFZ44NS/L
50
40
I
D
, Drain Current (A)
30
20
10
Fig 10a.
Switching Time Test Circuit
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( °C)
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-27
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