TK12
TK12
Phase Control Thyristor
Advance Information
Replaces January 2000 version, DS4252-4.0
DS4252-5.0 July 2001
FEATURES
s
High Surge Capability
KEY PARAMETERS
V
DRM
I
T(AV)
I
TSM
dVdt*
dI/dt
2000V
75A
1400A
200V/
µ
s
500A/
µ
s
APPLICATIONS
s
High Power Drives
s
High Voltage Power Supplies
s
DC Motor Control
s
Welding
s
Battery Chargers
*Higher dV/dt selections available
VOLTAGE RATINGS
Type Number
Repetitive Peak
Voltages
V
DRM
V
RRM
V
2000
1800
1600
1400
Conditions
TK12 20 M or K
TK12 18 M or K
TK12 16 M or K
TK12 14 M or K
T
vj
= 0˚ to 125˚C,
I
DRM
= I
RRM
= 100mA,
V
DRM
, V
RRM
t
p
= 10ms,
V
DSM
& V
RSM
=
V
DRM
& V
RRM
+ 100V
Respectively
Outline type code: TO94.
See Package Details for further information.
Fig. 1 Package outline
Lower voltage grades available.
ORDERING INFORMATION
When ordering, select the required part number shown in the
Voltage Ratings selection table, then:-
Add K to type number for 1/2" 20 UNF thread, e.g.
TK12 18K.
or
Add M to type number for M12 thread, e.g.
TK12 14M.
Note: Please use the complete part number when ordering and
quote this number in any future correspondance relating to your
order.
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TK12
CURRENT RATINGS
T
case
= 60˚C unless stated otherwise.
Symbol
I
T(AV)
I
T(RMS)
I
T
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Conditions
Half wave resistive load
-
-
Max.
104
163
139
Units
A
A
A
T
case
= 80˚C unless stated otherwise.
Symbol
I
T(AV)
I
T(RMS)
I
T
Parameter
Mean on-state current
RMS value
Continuous (direct) on-state current
Conditions
Half wave resistive load
-
-
Max.
75
120
100
Units
A
A
A
SURGE RATINGS
Symbol
I
TSM
I
2
t
I
TSM
I
2
t
Parameter
Surge (non-repetitive) on-state current
I
2
t for fusing
Surge (non-repetitive) on-state current
I
2
t for fusing
Conditions
10ms half sine; T
case
= 125
o
C
V
R
= 50% V
RRM
- 1/4 sine
10ms half sine; T
case
= 125
o
C
V
R
= 0
Max.
1.12
6.2 x 10
3
1.4
9.8 x 10
3
Units
kA
A
2
s
kA
A
2
s
THERMAL AND MECHANICAL DATA
Symbol
R
th(j-c)
R
th(c-h)
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
dc
Mounting torque 15.0Nm
with mounting compound
On-state (conducting)
T
vj
Virtual junction temperature
Reverse (blocking)
T
stg
-
Storage temperature range
Mounting torque
-
–40
12.0
125
150
15.0
o
Conditions
Min.
-
-
-
Max.
0.24
0.08
125
Units
o
C/W
C/W
o
o
C
C
C
o
Nm
2/8
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TK12
DYNAMIC CHARACTERISTICS
Symbol
V
TM
I
RRM
/I
DRM
dV/dt
Parameter
Maximum on-state voltage
Peak reverse and off-state current
Maximum linear rate of rise of off-state voltage
Conditions
At 150A peak, T
case
= 25
o
C
At V
RRM
/V
DRM
, T
case
= 125
o
C
To 60% V
DRM
T
j
= 125
o
C, Gate open circuit
Gate source 20V, 20Ω
t
r
≤
0.5µs, T
j
= 125˚C
At T
vj
= 125
o
C
At T
vj
= 125
o
C
V
D
= 300V, I
G
= 1A, I
T
= 50A, dI/dt = 50A/µs,
dI
G
/dt = 1A/µs, T
j
= 25
o
C
T
j
= 25
o
C, V
D
= 12V
T
j
= 25
o
C, V
D
= 12V, I
TM
= 1A
Repetitive 50Hz
Non-repetitive
V
T(TO)
r
T
t
gd
I
L
I
H
Threshold voltage
On-state slope resistance
Delay time
Latching current
Holding current
Min.
-
-
-
-
-
-
-
-
-
-
Max.
2.0
10
200
500
800
1.4
4.0
1.5
-
50
Units
V
mA
V/µs
A/µs
A/µs
V
mΩ
µs
mA
mA
dI/dt
Rate of rise of on-state current
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
V
GT
I
GT
V
GD
V
FGM
V
FGN
V
RGM
I
FGM
P
GM
P
G(AV)
Parameter
Gate trigger voltage
Gate trigger current
Gate non-trigger voltage
Peak forward gate voltage
Peak forward gate voltage
Peak reverse gate voltage
Peak forward gate current
Peak gate power
Mean gate power
Anode positive with respect to cathode
-
Conditions
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6Ω
V
DRM
= 12V, T
case
= 25
o
C, R
L
= 6Ω
At V
DRM
T
case
= 125
o
C, R
L
= 12Ω
Anode positive with respect to cathode
Anode negative with respect to cathode
Typ.
-
-
-
-
-
-
-
-
-
Max.
3.0
125
0.2
3.0
0.25
5
4
16
3
Units
V
mA
V
V
V
V
A
W
W
3/8
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TK12
CURVES
2000
Measured under pulse conditions
T
j
= 125˚C
SINUSOIDAL CURRENT WAVEFORM
Instantaneous on-state current, I
T
- (A)
1500
1000
RECTANGULAR CURRENT WAVEFORM
500
0
0
4.0
8.0
Instantaneous on-state voltage V
T
- (V)
12.0
Fig.2 Maximum (limit) on-state characteristics
Fig.3 Maximum on-state power dissipation for sinusoidal
current waveform
4/8
Fig.4 Maximum allowable case temperature for sinusoidal
current waveform
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TK12
Fig.5 Maximum on-state power dissipation for rectangular
current waveform
Fig.6 Maximum allowable case temperature for rectangular
current waveform
Fig.7 Gate trigger characteristics
Fig.8 Transient thermal impedance - junction to case
5/8
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