19-3634; Rev 0; 5/05
KIT
ATION
EVALU
BLE
AVAILA
12-Bit, 250Msps, High-Dynamic-Performance,
Dual DAC with LVDS Inputs
General Description
The MAX5876 is an advanced 12-bit, 250Msps, dual
digital-to-analog converter (DAC). This DAC meets the
demanding performance requirements of signal synthesis
applications found in wireless base stations and other
communications applications. Operating from +3.3V and
+1.8V supplies, this dual DAC offers exceptional dynamic
performance such as 75dBc spurious-free dynamic range
(SFDR) at f
OUT
= 16MHz and supports update rates of
250Msps, with a power dissipation of only 287mW.
The MAX5876 utilizes a current-steering architecture
that supports a 2mA to 20mA full-scale output current
range, and allows a 0.1V
P-P
to 1V
P-P
differential output
voltage swing. The device features an integrated +1.2V
bandgap reference and control amplifier to ensure
high-accuracy and low-noise performance. A separate
reference input (REFIO) allows for the use of an exter-
nal reference source for optimum flexibility and
improved gain accuracy.
The clock inputs of the MAX5876 accept both LVDS
and LVPECL-compatible voltage levels. The device fea-
tures an interleaved data input that allows a single
LVDS bus to support both DACs. The MAX5876 is avail-
able in a 68-pin QFN package with an exposed pad
(EP) and is specified for the extended temperature
range (-40°C to +85°C).
Refer to the MAX5877 and MAX5878 data sheets for
pin-compatible 14-bit and 16-bit versions of the
MAX5876, respectively. Refer to the MAX5873 data
sheet for a CMOS-compatible version of the MAX5876.
o
250Msps Output Update Rate
o
Noise Spectral Density = -154dBFS/Hz
at f
OUT
= 16MHz
o
Excellent SFDR and IMD
SFDR = 75dBc at f
OUT
= 16MHz (to Nyquist)
SFDR = 71dBc at f
OUT
= 80MHz (to Nyquist)
IMD = -87dBc at f
OUT
= 10MHz
IMD = -73dBc at f
OUT
= 80MHz
o
ACLR = 75dB at f
OUT
= 61MHz
o
2mA to 20mA Full-Scale Output Current
o
LVDS-Compatible Digital and Clock Inputs
o
On-Chip +1.20V Bandgap Reference
o
Low 287mW Power Dissipation
o
Compact 68-Pin QFN-EP Package (10mm x 10mm)
o
Evaluation Kit Available (MAX5878EVKIT)
Features
MAX5876
Ordering Information
PART
MAX5876EGK
TEMP RANGE
-40°C to +85°C
PIN-
PACKAGE
68 QFN-EP**
PKG CODE
G6800-4
**EP
= Exposed pad.
Pin Configuration
TOP VIEW
DV
DD1.8
B1N
B2N
B3N
B4N
B5N
B6N
B7N
B8N
B0P
B1P
B2P
B3P
B4P
B5P
B6P
B7P
Applications
Base Stations: Single-Carrier UMTS, CDMA, GSM
Communications: Fixed Broadband Wireless Access,
Point-to-Point Microwave
Direct Digital Synthesis (DDS)
Cable Modem Termination Systems (CMTS)
Automated Test Equipment (ATE)
Instrumentation
B0N
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
N.C.
GND
DV
DD3.3
GND
GND
AV
DD3.3
GND
REFIO
FSADJ
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
68
67 66 65 64
63 62 61 60 59 58
57 56 55 54 53 52
51
50
49
48
47
46
45
44
43
B8P
B9N
B9P
B10N
B10P
B11N
B11P
SELIQN
SELIQP
XORP
XORN
PD
TORB
CLKP
CLKN
GND
AV
CLK
Selector Guide
PART
MAX5873
MAX5874
MAX5875
MAX5876
MAX5877
MAX5878
RESOLUTION
(BITS)
12
14
16
12
14
16
UPDATE
RATE (Msps)
200
200
200
250
250
250
LOGIC
INPUTS
CMOS
CMOS
CMOS
LVDS
LVDS
LVDS
MAX5876
42
41
40
39
38
37
36
35
18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
AV
DD1.8
GND
OUTQN
OUTQP
GND
GND
GND
GND
OUTIN
DACREF
AV
DD3.3
AV
DD3.3
OUTIP
AV
DD3.3
AV
DD3.3
GND
QFN
________________________________________________________________
Maxim Integrated Products
AV
DD1.8
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
12-Bit, 250Msps, High-Dynamic-Performance,
Dual DAC with LVDS Inputs
MAX5876
ABSOLUTE MAXIMUM RATINGS
AV
DD1.8
, DV
DD1.8
to GND, DACREF...................-0.3V to +2.16V
AV
DD3.3
, DV
DD3.3
, AV
CLK
to GND, DACREF ........-0.3V to +3.9V
REFIO, FSADJ to
GND, DACREF..................................-0.3V to (AV
DD3.3
+ 0.3V)
OUTIP, OUTIN, OUTQP,
OUTQN to GND, DACREF...................-1V to (AV
DD3.3
+ 0.3V)
CLKP, CLKN to GND, DACREF..............-0.3V to (AV
CLK
+ 0.3V)
B11P/B11N–B0P/B0N, XORN, XORP, SELIQN,
SELIQP to GND, DACREF ...................-0.3V to (DV
DD1.8
+ 0.3V)
TORB, PD to GND, DACREF ...............-0.3V to (DV
DD3.3
+ 0.3V)
Continuous Power Dissipation (T
A
= +70°C)
68-Pin QFN-EP
(derate 41.7mW/°C above +70°C) (Note 1) ............3333.3mW
Thermal Resistance
θ
JA
(Note 1)...................................+24°C/W
Operating Temperature Range ......................... -40°C to +85°C
Junction Temperature .................................................... +150°C
Storage Temperature Range ........................... -60°C to +150°C
Lead Temperature (soldering, 10s) ............................... +300°C
Note 1:
Thermal resistance based on a multilayer board with 4 x 4 via array in exposed paddle area.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(AV
DD3.3
= DV
DD3.3
= AV
CLK
= +3.3V, AV
DD1.8
= DV
DD1.8
= +1.8V, GND = 0, f
CLK
= 2 x f
DAC
, external reference V
REFIO
= +1.25V, out-
put load 50Ω double-terminated, transformer-coupled output, I
OUTFS
= 20mA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
STATIC PERFORMANCE
Resolution
Integral Nonlinearity
Differential Nonlinearity
Offset Error
Offset-Drift Tempco
Full-Scale Gain Error
Gain-Drift Tempco
Full-Scale Output Current
Output Compliance
Output Resistance
Output Capacitance
DYNAMIC PERFORMANCE
Clock Frequency
Output Update Rate
Noise Spectral Density
f
CLK
f
DAC
f
DAC
= f
CLK
/ 2
f
DAC
= 150MHz
f
DAC
= 250MHz
f
OUT
= 16MHz, -12dBFS
f
OUT
= 80MHz, -12dBFS
2
1
-154
-153
500
250
MHz
Msps
dBFS/
Hz
R
OUT
C
OUT
I
OUTFS
GE
FS
External reference
Internal reference
External reference
(Note 3)
Single-ended
2
-0.5
1
5
-4.1
INL
DNL
OS
Measured differentially
Measured differentially
-0.015
12
±0.2
±0.1
±0.001
±10
-0.6
±100
±50
20
+1.1
+4.1
+0.015
Bits
LSB
LSB
%FS
ppm/°C
%FS
ppm/°C
mA
V
MΩ
pF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
2
_______________________________________________________________________________________
12-Bit, 250Msps, High-Dynamic-Performance,
Dual DAC with LVDS Inputs
ELECTRICAL CHARACTERISTICS (continued)
(AV
DD3.3
= DV
DD3.3
= AV
CLK
= +3.3V, AV
DD1.8
= DV
DD1.8
= +1.8V, GND = 0, f
CLK
= 2 x f
DAC
, external reference V
REFIO
= +1.25V, out-
put load 50Ω double-terminated, transformer-coupled output, I
OUTFS
= 20mA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
f
OUT
= 1MHz, 0dBFS
f
OUT
= 1MHz, -6dBFS
f
DAC
= 100MHz
f
OUT
= 1MHz, -12dBFS
f
OUT
= 10MHz, -12dBFS
f
OUT
= 30MHz, -12dBFS
f
OUT
= 10MHz, -12dBFS
Spurious-Free Dynamic Range
to Nyquist
SFDR
f
OUT
= 16MHz, -12dBFS,
T
A
≥
+25
o
C
f
OUT
= 16MHz, -12dBFS
f
OUT
= 50MHz, -12dBFS
f
OUT
= 80MHz, -12dBFS
f
OUT
= 10MHz, -12dBFS
f
DAC
= 250MHz
f
OUT
= 50MHz, -12dBFS
f
OUT
= 80MHz, -12dBFS
f
OUT
= 100MHz, -12dBFS
Spurious-Free Dynamic Range,
25MHz Bandwidth
SFDR
f
DAC
= 150MHz
f
DAC
= 100MHz
Two-Tone IMD
TTIMD
f
DAC
= 200MHz
Four-Tone IMD, 1MHz
Frequency Spacing, GSM Model
Adjacent Channel Leakage Power
Ratio 3.84MHz Bandwidth,
W-CDMA Model
Output Bandwidth
INTER-DAC CHARACTERISTICS
Gain Matching
Gain-Matching Tempco
Phase Matching
Phase-Matching Tempco
Channel-to-Channel Crosstalk
REFERENCE
Internal Reference Voltage Range
V
REFIO
1.14
1.2
1.26
V
∆Gain
∆Gain/°C
∆Phase
f
OUT
= 60MHz
∆Phase/°C
f
OUT
= 60MHz
f
DAC
= 200Msps, f
OUT
= 50MHz, 0dBFS
f
OUT
= DC - 80MHz
f
OUT
= DC
-0.24
±0.2
+0.01
±20
±0.25
±0.002
90
+0.24
dB
ppm/°C
Degrees
Degrees/
°C
dB
FTIMD
f
DAC
= 150MHz
f
DAC
=
184.32MHz
(Note 4)
f
OUT
= 16MHz, -12dBFS
f
OUT1
= 9MHz, -7dBFS;
f
OUT2
= 10MHz, -7dBFS
f
OUT1
= 79MHz, -7dBFS;
f
OUT2
= 80MHz, -7dBFS
f
OUT
= 16MHz, -12dBFS
67
66
MIN
TYP
98
88
81
77
77
75
75
75
73
71
77
73
70
68
80
-87
dBc
-73
-91
dBc
dBc
dBc
MAX
UNITS
MAX5876
f
DAC
= 200MHz
ACLR
BW
-1dB
f
OUT
= 61.44MHz
75
240
dB
MHz
_______________________________________________________________________________________
3
12-Bit, 250Msps, High-Dynamic-Performance,
Dual DAC with LVDS Inputs
MAX5876
ELECTRICAL CHARACTERISTICS (continued)
(AV
DD3.3
= DV
DD3.3
= AV
CLK
= +3.3V, AV
DD1.8
= DV
DD1.8
= +1.8V, GND = 0, f
CLK
= 2 x f
DAC
, external reference V
REFIO
= +1.25V, out-
put load 50Ω double-terminated, transformer-coupled output, I
OUTFS
= 20mA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
Reference Input Compliance
Range
Reference Input Resistance
Reference Voltage Drift
Output Fall Time
Output Rise Time
Output Propagation Delay
Glitch Impulse
Output Noise
TIMING CHARACTERISTICS
Data to Clock Setup Time
Data to Clock Hold Time
Data Latency
Minimum Clock Pulse-Width High
Minimum Clock Pulse-Width Low
Differential Input-Logic High
Differential Input-Logic Low
Common-Mode Voltage Range
Differential Input Resistance
Input Capacitance
CMOS LOGIC INPUTS (PD, TORB)
Input-Logic High
Input-Logic Low
Input Leakage Current
PD, TORB Internal Pulldown
Resistance
Input Capacitance
CLOCK INPUTS (CLKP, CLKN)
Differential Input
Voltage Swing
Sine wave
Square wave
>1.5
>0.5
V
P-P
C
IN
V
IH
V
IL
I
IN
V
PD
= V
TORB
= 3.3V
-20
1
1.5
2.5
0.7 x
DV
DD3.3
0.3 x
DV
DD3.3
+20
V
V
µA
MΩ
pF
t
CH
t
CL
V
IH
V
IL
V
CMR
R
IN
C
IN
(Note 7)
-100
1.125
110
2.5
1.375
t
SETUP
t
HOLD
Referenced to rising edge of clock (Note 6)
Referenced to rising edge of clock (Note 6)
Latency to I output
Latency to Q output
CLKP, CLKN
CLKP, CLKN
-1.2
2.0
9
8
0.9
0.9
100
ns
ns
Clock
Cycles
ns
ns
mV
mV
V
Ω
pF
n
OUT
SYMBOL
V
REFIOCR
R
REFIO
TCO
REF
t
FALL
t
RISE
t
PD
90% to 10% (Note 5)
10% to 90% (Note 5)
Excluding data latency (Note 5)
Measured differentially
I
OUTFS
= 2mA
I
OUTFS
= 20mA
CONDITIONS
MIN
0.125
10
±25
0.7
0.7
1.1
1
30
30
TYP
MAX
1.260
UNITS
V
kΩ
ppm/°C
ns
ns
ns
pV
•
s
pA/√Hz
ANALOG OUTPUT TIMING (See Figure 4)
LVDS LOGIC INPUTS (B11P/B11N–B0P/B0N, XORN, XORP, SELIQN, SELIQP)
4
_______________________________________________________________________________________
12-Bit, 250Msps, High-Dynamic-Performance,
Dual DAC with LVDS Inputs
ELECTRICAL CHARACTERISTICS (continued)
(AV
DD3.3
= DV
DD3.3
= AV
CLK
= +3.3V, AV
DD1.8
= DV
DD1.8
= +1.8V, GND = 0, f
CLK
= 2 x f
DAC
, external reference V
REFIO
= +1.25V, out-
put load 50Ω double-terminated, transformer-coupled output, I
OUTFS
= 20mA, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values
are at T
A
= +25°C.) (Note 2)
PARAMETER
Differential Input Slew Rate
External Common-Mode Voltage
Range
Input Resistance
Input Capacitance
POWER SUPPLIES
Analog Supply Voltage Range
Digital Supply Voltage Range
Clock Supply Voltage Range
AV
DD3.3
AV
DD1.8
DV
DD3.3
DV
DD1.8
AV
CLK
I
AVDD3.3 +
f
DAC
= 250Msps, f
OUT
= 16MHz
I
AVCLK
Power-down
I
AVDD1.8
I
DVDD3.3
Digital Supply Current
I
DVDD1.8
Power Dissipation
Power-Supply Rejection Ratio
P
DISS
PSRR
f
DAC
= 250Msps, f
OUT
= 16MHz
Power-down
f
DAC
= 250Msps, f
OUT
= 16MHz
Power-down
f
DAC
= 250Msps, f
OUT
= 16MHz
Power-down
f
DAC
= 250Msps, f
OUT
= 16MHz
Power-down
AV
DD3.3
= AV
CLK
= DV
DD3.3
= +3.3V
±5%
(Notes 8, 9)
-0.1
3.135
1.710
3.135
1.710
3.135
3.3
1.8
3.3
1.8
3.3
52
1
31
1
0.15
1
33
4
287
16
+0.1
324
40
1
36
3.465
1.890
3.465
1.890
3.465
56
V
V
V
mA
µA
mA
µA
mA
µA
mA
µA
mW
µW
%FS/V
SYMBOL
SR
CLK
V
COM
R
CLK
C
CLK
(Note 8)
CONDITIONS
MIN
TYP
>100
AV
CLK
/ 2
±0.3
5
2.5
MAX
UNITS
V/µs
V
kΩ
pF
MAX5876
Analog Supply Current
Note 2:
Note 3:
Note 4:
Note 5:
Note 6:
Note 7:
Note 8:
Note 9:
Specifications at T
A
≥
+25°C are guaranteed by production testing. Specifications at T
A
< +25°C are guaranteed by design.
Nominal full-scale current I
OUTFS
= 32 x I
REF
.
This parameter does not include update-rate-dependent effects of sin(x)/x filtering inherent in the MAX5876.
Parameter measured single-ended into a 50Ω termination resistor.
Not production tested. Guaranteed by design.
No termination resistance between XORP and XORN.
A differential clock input slew rate of >100V/µs is required to achieve the specified dynamic performance.
Parameter defined as the change in midscale output caused by a ±5% variation in the nominal supply voltage.
_______________________________________________________________________________________
5
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