电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

12103J4R7BAWTR

产品描述CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402
产品类别无源元件   
文件大小168KB,共19页
制造商AVX
下载文档 详细参数 全文预览

12103J4R7BAWTR概述

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402

电容, 薄膜/FOIL, 二氧化硅和氮化, 25 V, 0.0000047 uF, 表面贴装, 0402

12103J4R7BAWTR规格参数

参数名称属性值
负偏差2.13 %
最小工作温度-55 Cel
最大工作温度125 Cel
正偏差2.13 %
额定直流电压urdc25 V
加工封装描述CHIP, ROHS COMPLIANT
each_compliYes
欧盟RoHS规范Yes
中国RoHS规范Yes
状态Active
电容类型FILM CAPACITOR
电容4.70E-6 µF
电介质材料SILICON DIOXIDE AND NITRIDE
jesd_609_codee3
制造商系列ACCU-P
安装特点SURFACE MOUNT
包装形状RECTANGULAR PACKAGE
包装尺寸SMT
cking_methodTR, 7/13 INCH
seriesSIZE(ACCU-P)
尺寸编码0402
温度系数-/+30ppm/Cel
端子涂层MATTE TIN OVER NICKEL
端子形状WRAPAROUND
heigh0.4000 mm
length1 mm
width0.5500 mm
dditional_featureCAPACITANCE TOLERANCE IS 0.1 PICO FARAD

文档预览

下载PDF文档
Accu-F
®
/ Accu-P
®
Thin-Film Technology
THE IDEAL CAPACITOR
The non-ideal characteristics of a real capacitor can be
ignored at low frequencies. Physical size imparts inductance
to the capacitor and dielectric and metal electrodes result in
resistive losses, but these often are of negligible effect on the
circuit. At the very high frequencies of radio communication
(>100MHz) and satellite systems (>1GHz), these effects
become important. Recognizing that a real capacitor will
exhibit inductive and resistive impedances in addition to
capacitance, the ideal capacitor for these high frequencies is
an ultra low loss component which can be fully characterized
in all parameters with total repeatability from unit to unit.
Until recently, most high frequency/microwave capacitors
were based on fired-ceramic (porcelain) technology. Layers
of ceramic dielectric material and metal alloy electrode paste
are interleaved and then sintered in a high temperature oven.
This technology exhibits component variability in dielectric
quality (losses, dielectric constant and insulation resistance),
variability in electrode conductivity and variability in physical
size (affecting inductance). An alternate thin-film technology
has been developed which virtually eliminates these vari-
ances. It is this technology which has been fully incorporated
into Accu-F
®
and Accu-P
®
to provide high frequency capaci-
tors exhibiting truly ideal characteristics.
The main features of Accu-F
®
and Accu-P
®
may be summa-
rized as follows:
• High purity of electrodes for very low and repeatable
ESR.
• Highly pure, low-K dielectric for high breakdown field,
high insulation resistance and low losses to frequencies
above 40GHz.
• Very tight dimensional control for uniform inductance,
unit to unit.
• Very tight capacitance tolerances for high frequency
signal applications.
This accuracy sets apart these Thin-Film capacitors from
ceramic capacitors so that the term Accu has been
employed as the designation for this series of devices, an
abbreviation for “accurate.”
THIN-FILM TECHNOLOGY
Thin-film technology is commonly used in producing semi-
conductor devices. In the last two decades, this technology
has developed tremendously, both in performance and in
process control. Today’s techniques enable line definitions of
below 1μm, and the controlling of thickness of layers at 100Å
(10
-2
μm). Applying this technology to the manufacture of
capacitors has enabled the development of components
where both electrical and physical properties can be tightly
controlled.
The thin-film production facilities at AVX consist of:
• Class 1000 clean rooms, with working areas under
laminar-flow hoods of class 100, (below 100 particles
per cubic foot larger than 0.5μm).
• High vacuum metal deposition systems for high-purity
electrode construction.
• Photolithography equipment for line definition down to
2.0μm accuracy.
• Plasma-enhanced CVD for various dielectric deposi-
tions (CVD=Chemical Vapor Deposition).
• High accuracy, microprocessor-controlled dicing saws
for chip separation.
• High speed, high accuracy sorting to ensure strict
tolerance adherence.
1
TERMINATION
ALUMINA
ELECTRODE
SEAL
ELECTRODE
DIELECTRIC
ALUMINA
ACCU-P
®
CAPACITOR
6
Xilinx virtex-6 FPGA 双网口通信的问题
大家好,我们实验室自己研发了一个实验板,主芯片是virtex-6 LX240T(设计类同ML605开发板),采用的网口设计是FPGA+88E1111,但是设计了两个这样的网口,其中一个网口(该网口与ML605开 ......
wei_along FPGA/CPLD
DAC大虾们到你们活动的时间了
弱弱的问下 用G2553能驱动12位和8位的DA嘛。。有谁写过用430驱动tlv5620和tlv5615...
tanfeng193 微控制器 MCU
嵌入式学习资料下载
www.chinaeda.cn QQ:763557435 电话:400-702-8848...
ddh19 嵌入式系统
一些采用STM32制作的测亩仪,给DIY的小伙伴们玩玩儿
有一个STM32F103RET6和NEO的GPS模块,当然也可以正常使用,需要换电池,可以送一个电池。如果需要DIY成其他东西,需要JLINK解锁FLASH,不然是烧录不进去程序的额,不提供资料,需要自己研究。 ......
ylyfxzsx 淘e淘
基础IO口设置有些不明白,求各位帮忙看看
板子上P1.0,P1.1两个口同时接到了触摸屏中断上,是这样设置的P1DIR=0x00;(输入模式),P1SEL=0x00;(普通IO口),P1IE=???????11;P1IES=???????1;P1OUT=??????00(电平置0), 请麻烦一下,怎么设置 ......
忘密码了 微控制器 MCU
关于Android中加入USB主控驱动的问题
最近因为毕设需要,在移植Android1.5到urbetter s3c6410的板子上,需要使用板子上的USB来连接USB设备 内核编译选项添加了usb host side driver,全选了usb host controller drivers,但是依 ......
hd2046 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 195  691  859  40  799  56  8  43  33  53 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved