Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69
参数名称 | 属性值 |
零件包装代码 | BGA |
包装说明 | TFBGA, |
针数 | 69 |
Reach Compliance Code | unknown |
其他特性 | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM |
JESD-30 代码 | R-PBGA-B69 |
长度 | 11 mm |
内存密度 | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT |
内存宽度 | 16 |
功能数量 | 1 |
端子数量 | 69 |
字数 | 2097152 words |
字数代码 | 2000000 |
工作模式 | ASYNCHRONOUS |
最高工作温度 | 85 °C |
最低工作温度 | -40 °C |
组织 | 2MX16 |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | TFBGA |
封装形状 | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态 | Not Qualified |
座面最大高度 | 1.2 mm |
最大供电电压 (Vsup) | 3.3 V |
最小供电电压 (Vsup) | 2.7 V |
标称供电电压 (Vsup) | 3 V |
表面贴装 | YES |
技术 | CMOS |
温度等级 | INDUSTRIAL |
端子形式 | BALL |
端子节距 | 0.8 mm |
端子位置 | BOTTOM |
宽度 | 8 mm |
Base Number Matches | 1 |
K5A3340YTA-T370 | K5A3340YTA-T870 | K5A3340YBA-T370 | K5A3340YBA-T870 | K5A3340YBA-T970 | K5A3240YTA-T370 | K5A3240YBA-T370 | K5A3240YTA-T970 | |
---|---|---|---|---|---|---|---|---|
描述 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 | Memory Circuit, 2MX16, CMOS, PBGA69, 8 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, TBGA-69 |
零件包装代码 | BGA | BGA | BGA | BGA | BGA | BGA | BGA | BGA |
包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
针数 | 69 | 69 | 69 | 69 | 69 | 69 | 69 | 69 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
其他特性 | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM | ALSO CONTAINS (512KX8 / 256KX16) FULL CMOS SRAM |
JESD-30 代码 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 | R-PBGA-B69 |
长度 | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm | 11 mm |
内存密度 | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bit |
内存集成电路类型 | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT | MEMORY CIRCUIT |
内存宽度 | 16 | 16 | 16 | 16 | 16 | 16 | 16 | 16 |
功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 69 | 69 | 69 | 69 | 69 | 69 | 69 | 69 |
字数 | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words | 2097152 words |
字数代码 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 | 2000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 2MX16 | 2MX16 | 2MX16 | 2MX16 | 2MX16 | 2MX16 | 2MX16 | 2MX16 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
最大供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
最小供电电压 (Vsup) | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V | 2.7 V |
标称供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V | 3 V |
表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
宽度 | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm | 8 mm |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | - | - |
厂商名称 | - | SAMSUNG(三星) | - | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved