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“Standard”:
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ
PA1754
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PACKAGE DRAWING (Unit : mm)
8
5
1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
1
4
5.37 Max.
+0.10
–0.05
DESCRIPTION
This product is Dual N-channel MOS Field Effect
Transistor designed for Li-ion battery applications
and power management applications of notebook
computers.
FEATURES
•
Dual chip type
1.44
•
Low on-resistance
R
DS(on)2
= 53 mΩ MAX. (V
GS
= 4 V, I
D
= 3.5 A)
•
Low input capacitance C
iss
= 780 pF TYP.
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1.8 Max.
6.0 ±0.3
4.4
0.8
R
DS(on)1
= 32 mΩ MAX. (V
GS
= 10 V, I
D
= 3.5 A)
0.15
0.05 Min.
0.5 ±0.2
0.10
1.27
0.40
0.78 Max.
0.12 M
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
Drain
EQUIVALENT CIRCUIT
(1/2 Circuit)
µ
PA1754G
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0)
Gate to Source Voltage (V
DS
= 0)
Drain Current (DC)
Drain Current (pulse)
Note1
Note2
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
2
30
±20
±7.0
±28
1.7
2.0
150
–55 to + 150
V
V
A
A
W
W
°C
°C
Gate
Body
Diode
Gate
Protection
Diode
Source
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1 %
2.
Mounted on ceramic substrate of 2000 mm x 1.1 mm
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G12009EJ1V0DS00 (1st edition)
Date Published February 1999 NS CP(K)
Printed in Japan
©
1997
测试/测量
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