Datasheet> 器件分类 > 分立半导体> 晶体管> CMUDM8005BKTIN/LEAD

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CMUDM8005BKTIN/LEAD: 产品描述Transistor; 产品类别分立半导体晶体管; 文件大小832KB，共3页; 制造商Central Semiconductor

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CMUDM8005BKTIN/LEAD概述

Transistor

CMUDM8005BKTIN/LEAD规格参数

参数名称	属性值
是否Rohs认证	不符合
Reach Compliance Code	unknown
配置	Single
最大漏极电流 (Abs) (ID)	0.65 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	0.3 W
表面贴装	YES
Base Number Matches	1

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CMUDM8005

SURFACE MOUNT SILICON

P-CHANNEL

ENHANCEMENT-MODE

MOSFET

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMUDM8005

is an enhancement-mode P-Channel MOSFET,

manufactured by the P-Channel DMOS process,

designed for high speed pulsed amplifier and driver

applications. This MOSFET offers low rDS(ON) and

low theshold voltage.

MARKING CODE: 5C8

SOT-523 CASE

APPLICATIONS:

• Load/Power switches

• Power supply converter circuits

• Battery powered portable equipment

MAXIMUM RATINGS:

(TA=25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State - Note 1)

Continuous Source Current (Body Diode)

Maximum Pulsed Drain Current

Power Dissipation (Note 1)

Operating and Storage Junction Temperature

FEATURES:

•

ESD protection up to 1800V

(Human Body Model)

300mW power dissipation

Very low rDS(ON)

Low threshold voltage

Logic level compatible

Small, SOT-523 surface mount package

UNITS

°C

SYMBOL

VDS

VGS

IDM

TJ, Tstg

8.0

650

250

1.0

300

-65 to +150

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

IGSSF, IGSSR VGS=4.5V, VDS=0

IDSS

VDS=16V, VGS=0

BVDSS

VGS(th)

VSD

rDS(ON)

gFS

Crss

Ciss

Coss

VGS=0, ID=250μA

VDS=VGS, ID=250μA

VGS=0, IS=250mA

VGS=4.5V, ID=350mA

VGS=2.5V, ID=300mA

VGS=1.8V, ID=150mA

VDS=10V, ID=200mA

VDS=16V, VGS=0, f=1.0MHz

0.2

100

1.13in

MAX

100

UNITS

μA

0.5

1.0

1.1

0.25

0.37

0.36

0.5

0.8

Notes: (1) Mounted on 2 inch square FR-4 PCB with copper mounting pad area of

R4 (5-June 2013)

CMUDM8005BKTIN/LEAD相似产品对比

	CMUDM8005BKTIN/LEAD	CMUDM8005BKLEADFREE	CMUDM8005TRLEADFREE	CMUDM8005TR	CMUDM8005BK	CMUDM8005TRTIN/LEAD
描述	Transistor	Transistor	Small Signal Field-Effect Transistor, 0.65A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-523, 3 PIN	Transistor	Transistor	Transistor
是否Rohs认证	不符合	符合	符合	不符合	不符合	不符合
Reach Compliance Code	unknown	compliant	compliant	unknown	unknown	unknown
配置	Single	Single	SINGLE WITH BUILT-IN DIODE	Single	Single	Single
最大漏极电流 (Abs) (ID)	0.65 A	0.65 A	0.65 A	0.65 A	0.65 A	0.65 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL	P-CHANNEL
最大功率耗散 (Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
表面贴装	YES	YES	YES	YES	YES	YES
Base Number Matches	1	1	1	1	1	1

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