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SML50J50

产品描述Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
产品类别分立半导体    晶体管   
文件大小23KB,共2页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
下载文档 详细参数 选型对比 全文预览

SML50J50概述

Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SML50J50规格参数

参数名称属性值
是否Rohs认证不符合
包装说明FLANGE MOUNT, R-PUFM-X4
Reach Compliance Codecompliant
雪崩能效等级(Eas)1300 mJ
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压500 V
最大漏极电流 (ID)50 A
最大漏源导通电阻0.085 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PUFM-X4
元件数量1
端子数量4
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型N-CHANNEL
最大脉冲漏极电流 (IDM)200 A
认证状态Not Qualified
表面贴装NO
端子形式UNSPECIFIED
端子位置UPPER
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

文档预览

下载PDF文档
SML50J50
SOT–227 Package Outline.
Dimensions in mm (inches)
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
H=
4 .8 (0 .1 8 7 )
4 .9 (0 .1 9 3 )
(4 places)
1 2 .6 (0 .4 9 6 )
1 2 .8 (0 .5 0 4 )
2 5 .2 (0 .9 9 2 )
2 5 .4 (1 .0 0 0 )
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
1
R
2
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
4
3.3 (0 .1 2 9)
3.6 (0.14 3 )
1 4 .9 (0.58 7 )
1 5 .1 (0.59 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
3 8 .0 (1.4 9 6 )
3 8 .2 (1.5 0 4 )
3
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
R =
4 .0 (0 .1 57 )
(2 P lac e s)
S
D
V
DSS
500V
50A
I
D(cont)
R
DS(on)
0.085Ω
Faster Switching
Lower Leakage
100% Avalanche Tested
Popular SOT–227 Package
S
G
* Source terminals are shorted
internally. Current handling
capability is equal for
either Source terminal.
D
G
S
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
500
50
200
±20
±30
500
4
–55 to 150
300
30
30
1300
V
A
A
V
W
W/°C
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 2.89mH, R
G
= 25Ω, Peak I
L
= 30A
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
Website:
http://www.semelab.co.uk
E-mail:
sales@semelab.co.uk
5/99

SML50J50相似产品对比

SML50J50 SML50J50R3
描述 Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
是否Rohs认证 不符合 符合
Reach Compliance Code compliant compliant
雪崩能效等级(Eas) 1300 mJ 1300 mJ
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 500 V 500 V
最大漏极电流 (ID) 50 A 50 A
最大漏源导通电阻 0.085 Ω 0.085 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PUFM-X4 R-PUFM-X4
元件数量 1 1
端子数量 4 4
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
最高工作温度 150 °C 150 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 N-CHANNEL N-CHANNEL
最大脉冲漏极电流 (IDM) 200 A 200 A
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子形式 UNSPECIFIED UNSPECIFIED
端子位置 UPPER UPPER
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
Base Number Matches 1 1

 
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