MX29F001T/B
1M-BIT [128K x 8] CMOS FLASH MEMORY
FEATURES
5.0V
±
10% for read, erase and write operation
131072x8 only organization
Fast access time: 90/120ns
Low power consumption
- 30mA maximum active current(5MHz)
- 1u
A
typical standby current
• Command register architecture
- Byte Programming (7us typical)
- Sector Erase (8K-Byte x 1, 4K-Byte x 2, 8K Byte
x 2, 32K-Byte x 1, and 64K-Byte x 1)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors
with Erase Suspend capability.
- Automatically programs and verifies data at
specified address
• Erase Suspend/Erase Resume
– Suspends an erase operation to read data from,
or program data to, a sector that is not being
erased, then resumes the erase operation.
•
•
•
•
• Status Reply
- Data polling & Toggle bit for detection of program
and erase cycle completion.
• Chip protect/unprotect for 5V only system or 5V/12V
system
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1 to VCC+1V
• Boot Code Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 3.2V
• Package type:
- 32-pin PLCC
- 32-pin TSOP
- 32-pin PDIP
• Boot Code Sector Architecture
- T=Top Boot Sector
- B=Bottom Boot Sector
• 20 years data retention
GENERAL DESCRIPTION
The MX29F001T/B is a 1-mega bit Flash memory
organized as 128K bytes of 8 bits only MXIC's
Flash memories offer the most cost-effective and
reliable read/write non-volatile random access
memory. The MX29F001T/B is packaged in 32-pin
PLCC, TSOP, PDIP. It is designed to be repro-
grammed and erased in-system or in-standard
EPROM programmers.
The standard MX29F001T/B offers access time
90ns. To eliminate bus contention, the MX29F001T/
B has separate chip enable (CE) and output enable
(OE) controls.
MXIC's Flash memories augment EPROM function-
ality with in-circuit electrical erasure and
programming. The MX29F001T/B uses a command
register to manage this functionality. The command
register allows for 100% TTL level control inputs
and fixed power supply levels during erase and
programming, while maintaining maximum EPROM
compatibility.
MXIC Flash technology reliably stores memory con-
tents even after 100,000 erase and program cycles.
The MXIC cell is designed to optimize the erase and
programming mechanisms. In addition, the combi-
nation of advanced tunnel oxide processing and low
internal electric fields for erase and programming
operations produces reliable cycling.
The
MX29F001T/B uses a 5.0V
±
10% VCC supply to
perform the High Reliability Erase and auto
Program/Erase algorithms.
The highest degree of latch-up protection is
achieved with MXIC's proprietary non-epi process.
Latch-up protection is proved for stresses up to 100
milliamps on address and data pin from -1V to VCC
+ 1V.
P/N: PM0515
REV. 2.6, DEC. 29, 2003
1
MX29F001T/B
PIN CONFIGURATIONS
VCC
32 PDIP
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
Q0
Q1
Q2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
32 PLCC
A12
A15
A16
NC
5
4
1
WE
32
A7
A6
A5
A4
A3
A2
A1
A0
Q0
30
29
NC
A14
A13
A8
A9
MX29F001T/B
9
MX29F001T/B
25
A11
OE
A10
CE
13
14
Q1
Q2
GND
17
Q3
Q4
Q5
21
20
Q6
Q7
32 TSOP (TYPE 1)
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
Q7
Q6
Q5
Q4
Q3
GND
Q2
Q1
Q0
A0
A1
A2
A3
PIN DESCRIPTION:
SYMBOL
A0~A16
Q0~Q7
CE
WE
OE
VCC
GND
PIN NAME
Address Input
Data Input/Output
Chip Enable Input
Write Enable Input
Output Enable Input
Power Supply Pin (+5V)
Ground Pin
MX29F001T/B
(NORMAL TYPE)
SECTOR STRUCTURE
A16~A0
1FFFFH
1DFFFH
1CFFFH
1BFFFH
19FFFH
17FFFH
0FFFFH
00000H
8
4
4
8
8
32
64
K-BYTE
K-BYTE
K-BYTE
K-BYTE
K-BYTE
K-BYTE
K-BYTE
00000H
A16~A0
1FFFFH
0FFFFH
07FFFH
05FFFH
03FFFH
02FFFH
01FFFH
8
8
4
4
8
K-BYTE
K-BYTE
K-BYTE
K-BYTE
K-BYTE
64
32
K-BYTE
K-BYTE
MX29F001T Sector Architecture
P/N: PM0515
MX29F001B Sector Architecture
REV. 2.6, DEC. 29, 2003
2
MX29F001T/B
BLOCK DIAGRAM
WRITE
CE
OE
WE
CONTROL
INPUT
LOGIC
HIGH VOLTAGE
MACHINE
(WSM)
PROGRAM/ERASE
STATE
X-DECODER
MX29F001T/B
FLASH
ARRAY
ARRAY
STATE
REGISTER
ADDRESS
LATCH
A0-A16
AND
BUFFER
SENSE
AMPLIFIER
Y-DECODER
Y-PASS GATE
SOURCE
HV
COMMAND
DATA
DECODER
PGM
DATA
HV
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q7
I/O BUFFER
P/N: PM0515
REV. 2.6, DEC. 29, 2003
3
MX29F001T/B
AUTOMATIC PROGRAMMING
The MX29F001T/B is byte programmable using the Au-
tomatic Programming algorithm. The Automatic Program-
ming algorithm does not require the system to time out
or verify the data programmed. The typical chip pro-
gramming time of the MX29F001T/B at room tempera-
ture is less than 3.5 seconds.
AUTOMATIC ERASE ALGORITHM
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using stan-
dard microprocessor write timings. The device will auto-
matically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecu-
tive read cycles provides feedback to the user as to the
status of the programming operation.
Register contents serve as inputs to an internal state-
machine which controls the erase and programming cir-
cuitry. During write cycles, the command register inter-
nally latches addresses and data needed for the pro-
gramming and erase operations. During a system write
cycle, addresses are latched on the falling edge, and
data are latched on the rising edge of WE .
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reli-
ability, and cost effectiveness. The MX29F001T/B elec-
trically erases all bits simultaneously using Fowler-
Nordheim tunneling. The bytes are programmed by us-
ing the EPROM programming mechanism of hot elec-
tron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command regis-
ter to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 3 second. The Automatic Erase algorithm au-
tomatically programs the entire array prior to electrical
erase. The timing and verification of electrical erase are
internally controlled within the device.
AUTOMATIC SECTOR ERASE
The MX29F001T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. Sector erase modes allow
sectors of the array to be erased in one erase cycle. The
Automatic Sector Erase algorithm automatically pro-
grams the specified sector(s) prior to electrical erase.
The timing and verification of electrical erase are inter-
nally con trolled by the device.
AUTOMATIC PROGRAMMING ALGORITHM
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (include 2
unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the pro-
gram verification, and counts the number of sequences.
A status bit similar to DATA polling and a status bit tog-
gling between consecutive read cycles, provides feed-
back to the user as to the status of the programming
operation.
P/N: PM0515
REV. 2.6, DEC. 29, 2003
4
MX29F001T/B
TABLE 1. SOFTWARE COMMAND DEFINITIONS
Command
Bus
First Bus
Cycle
Data
F0H
RD
AAH
AAH
2AAH
2AAH
55H
55H
555H 90H
555H 90H
ADI
(SA)
X02H
Program
Chip Erase
Sector Erase
4
6
6
555H
555H
555H
XXXH
XXXH
555H
AAH
AAH
AAH
B0H
30H
AAH
2AAH
55H
555H 80H
555H
AAH
2AAH 55H
555H 20H
2AAH
2AAH
2AAH
55H
55H
55H
555H A0H
555H 80H
555H 80H
PA
555H
555H
DDI
00H
01H
PD
AAH
AAH
2AAH
2AAH
55H
55H
555H 10H
SA
30H
Second Bus
Cycle
Addr
Data
Third Bus
Cycle
Addr Data
Fourth Bus
Cycle
Addr
Data
Fifth Bus
Cycle
Addr Data
Sixth Bus
Cycle
Addr Data
Cycle Addr
Reset
Read
Read Silicon ID
Chip Protect Verify
1
1
4
4
XXXH
RD
555H
555H
Sector Erase Suspend 1
Sector Erase Resume
Unlock for chip
protect/unprotect
1
6
Note:
1. ADI = Address of Device identifier;A1=0, A0 =0 for manufacture code, A1=0, A0 =1 for device code.(Refer to
Table 3)
DDI = Data of Device identifier : C2H for manufacture code, 18H/19H for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2. PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address to the sector to be erased.
3. The system should generate the following address patterns: 555H or 2AAH to Address A0~A10.
Address bit A11~A16=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A16 in either state.
4. For chip protect verify operation : If read out data is 01H, it means the chip has been protected. If read out data
is 00H, it means the chip is still not being protected.
COMMAND DEFINITIONS
Device operations are selected by writing specific ad-
dress and data sequences into the command register.
Writing incorrect address and data values or writing
them in the improper sequence will reset the device to
the read mode. Table 1 defines the valid register
command sequences. Note that the Erase Suspend
(B0H) and Erase Resume (30H) commands are valid
only while the Sector Erase operation is in progress.
Either of the two reset command sequences will reset
the device(when applicable).
P/N: PM0515
REV. 2.6, DEC. 29, 2003
5
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