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UPD44645084F5-E50-FQ1-A

产品描述QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
产品类别存储    存储   
文件大小380KB,共40页
制造商NEC(日电)
标准  
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UPD44645084F5-E50-FQ1-A概述

QDR SRAM, 8MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, LEAD FREE, PLASTIC, BGA-165

UPD44645084F5-E50-FQ1-A规格参数

参数名称属性值
是否Rohs认证符合
包装说明15 X 17 MM, LEAD FREE, PLASTIC, BGA-165
Reach Compliance Codecompliant
最长访问时间0.45 ns
JESD-30 代码R-PBGA-B165
JESD-609代码e1
长度17 mm
内存密度67108864 bit
内存集成电路类型QDR SRAM
内存宽度8
功能数量1
端子数量165
字数8388608 words
字数代码8000000
工作模式SYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织8MX8
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.51 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层TIN SILVER COPPER
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15 mm
Base Number Matches1

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PRELIMINARY DATA SHEET
MOS INTEGRATED CIRCUIT
μ
PD44645084, 44645094, 44645184, 44645364
72M-BIT QDR
TM
II SRAM
4-WORD BURST OPERATION
Description
The
μ
PD44645084 is a 8,388,608-word by 8-bit, the
μ
PD44645094 is a 8,388,608-word by 9-bit, the
μ
PD44645184 is a
4,194,304-word by 18-bit and the
μ
PD44645364 is a 2,097,152-word by 36-bit synchronous quad data rate static RAM
fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
The
μ
PD44645084,
μ
PD44645094,
μ
PD44645184 and
μ
PD44645364 integrate unique synchronous peripheral
circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive
edge of K and K#.
These products are suitable for application which require synchronous operation, high speed, low voltage, high density
and wide bit configuration.
These products are packaged in 165-pin PLASTIC BGA.
Features
1.8 ± 0.1 V power supply
165-pin PLASTIC BGA (15 x 17)
HSTL interface
PLL circuitry for wide output data valid window and future frequency scaling
Separate independent read and write data ports with concurrent transactions
100% bus utilization DDR READ and WRITE operation
Four-tick burst for reduced address frequency
Two input clocks (K and K#) for precise DDR timing at clock rising edges only
Two output clocks (C and C#) for precise flight time
and clock skew matching-clock and data delivered together to receiving device
Internally self-timed write control
Clock-stop capability. Normal operation is restored in 1,024 cycles after clock is resumed.
User programmable impedance output
Fast clock cycle time : 3.7 ns (270 MHz) , 4.0 ns (250 MHz) , 5.0 ns (200 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. M18232EJ2V0DS00 (2nd edition)
Date Published February 2007 NS CP(N)
Printed in Japan
The mark <R> shows major revised points.
2006
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

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