Ordering number : ENN8405
TN4Q03
ExPD (Excellent Power Device)
TN4Q03
Features
•
•
•
•
•
Quasi-Resonant Switching
Power Supply Applications
Original control IC for Quasi-resonant type.
High voltage Power MOSFET with current sense.
Low input voltage protection (Automatic reset)
Over voltage protection (Latch).
Over current protection (Pulse-by-pulse).
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
VDD Pin Apply Voltage
FB Pin Apply Voltage
EDGE Pin Apply Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
ID
IDP
VDD
VFB
VEDGE
PD
Topr
Tj
Tstg
EAS
IAV
3-5
3-5
3-5
3-5
3-5
4-5
1-5
2-5
Tc=25°C
PW≤10µs, duty cycle≤1%
Conditions
Ratings
450
6
24
--0.3 to 16.7
--0.3 to VDD+0.3
--0.3 to VDD+0.3
2
35
--25 to +125
150
--55 to +150
180
6
unit
V
A
A
V
V
V
W
W
°C
°C
°C
mJ
A
[The voltage parameters indicate the GND pin voltage]
*1 VDD=50V, L=10mH, IAV=6A
*2 L≤10mH, single pulse
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81005IQ MS IM TB-00001671 No.8405-1/4
TN4Q03
Electrical Characteristics
at Ta=25°C
Parameter
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
[IC]
Power Supply Line Breakdown Voltage
Over Voltage Input Latch Shutdown Threshold Voltage
Burst Mode Start Threshold Voltage
Burst Mode Stop Threshold Voltage
Burst Mode Hysteresis Voltage
Low Voltage Protection Release Threshold Voltage
(Latch Reset Threshold Voltage)
Low Voltage Protection Operation Threshold Voltage
Low Voltage Protection Hysteresis Voltage
Feedback Detection Threshold Voltage
Edge Signal Release Threshold Voltage
Edge Signal Detection Threshold Voltage
Edge Signal Hysteresis Voltage
Initial Oscillation Frequency
Maximum Oscillation Frequency
Power Supply Current (at start-up)
Minimum ON Time
Step Drive Time
Step Drive Gate Voltage
V(BR)DD
OVP
VBon
VBoff
∆VB
UVH
UVL
∆UV
VFB
VEDGE-H
VEDGE-L
∆V
EDGE
fosc
fmax
IDD(on)
ton(min)
tstep
VGstep
4-5 IDD=1mA, VFB=0V
4-5
4-5 VEDGE=VDD
4-5 VEDGE=VDD
4-5 VEDGE=VDD
4-5
4-5
4-5
1-5
2-5
2-5
2-5
3-5 VEDGE=0V
3-5
4-5
3-5
3-5
3-5
30
150
0.58
2.3
1.6
9.1
8.0
16.7
15.7
15.2
14.6
16.5
16.0
15.4
0.6
9.9
8.8
1.1
0.70
2.6
1.9
0.7
35
180
200
300
200
VDD--5.7
40
210
0.82
2.9
2.2
10.7
9.6
17.3
16.8
16.2
V
V
V
V
V
V
V
V
V
V
V
V
kHz
kHz
µA
ns
ns
V
V(BR)DSS
IDSS
RDS(on)
Ciss
Coss
3-5 ID=1mA, VDD=0V
3-5 VDS=450V, VDD=0V
3-5 ID=3.3A, VDD=15V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
450
1
0.95
790
210
1.3
V
mA
Ω
pF
pF
Symbol
Conditions
Ratings
min
typ
max
Unit
Package Dimensions
unit : mm
7511-002
10.0
4.5
3.2
2.8
3.5
16.0
7.2
2.4
(5.3)
(4.0)
0.7
(0.9)
1.5
3.0
6.5
0.9
2.54
1.27
3
12
45
2.54
1.27
13.3
0.5
10.3
1.27
2.54
1.27
2.54
6.0
1 : FB
2 : EDGE
3 : DRAIN
4 : VDD
5 : SOURCE
SANYO : TO-220FI5H
No.8405-2/4
TN4Q03
Block Diagram
VDD pin
EDGE pin
4
Internal power supply
Low input voltage protection
2
Falling edge detection
Overvoltage
protection
Reference voltage
Oscillator
Latch circuit
Burst circuit
3
DRAIN pin
Overcurrent /
FB comparator
Logic
Driver
FB pin
1
5
SOURCE
(GND) pin
Pin Definitions and Functions
Pin No.
1
2
3
4
5
Symbol
FB
EDGE
DRAIN
VDD
SOURCE (GND)
Name
Over current / feedback terminal
EDGE dtection terminal
DRAIN terminal
Power supply terminal
Source (Ground) terminal
Delay EDGE Input voltage
Power MOSFET Drain
Input for Start-up voltage and drive voltage
Power MOSFET Source (Ground)
Function
Input for feedback voltage and current sence
Circuit Function Diagram
Starting resistors
Voltage resonance capacitor
Snubber circuit
+B
+
5
+
4
OCP
Input voltage
compensation
resistor
3
2
GND
1
+
Error amplifier
FB / OCP
adjusting resistor
VCC circuit
Delay time setting capacitor and resistor
No.8405-3/4
TN4Q03
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Bias ASO
10
µ
s
Allowable Power Dissipation, PD -- W
IDP=24A
ID=6A
<10µs
2.5
PD -- Ta
10
0
µ
Drain Current, ID -- A
1m
m
DC
100
s
ms
op
era
tio
n
Operation in this
area is limited by RDS(on).
s
2.0
10
s
1.5
1.0
0.5
0.01
1.0
Tc=25°C
Single pulse
2
3
5
7 10
2
3
5
7 100
2
3
5
7
0
0
20
40
60
80
100
120
140
160
IT09582
Drain-to-Source Voltage, VDS -- V
40
Ambient Temperature, Ta --
°C
IT09578
PD -- Tc
Allowable Power Dissipation, PD -- W
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
160
Case Temperature, Tc --
°C
IT09583
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2005. Specifications and information herein are subject
to change without notice.
PS No.8405-4/4
FPGA/CPLD
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