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MBRM120ET3

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA,
产品类别分立半导体    二极管   
文件大小135KB,共4页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
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MBRM120ET3概述

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-216AA,

MBRM120ET3规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Motorola ( NXP )
包装说明R-PSSO-G1
Reach Compliance Codeunknown
ECCN代码EAR99
外壳连接CATHODE
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JEDEC-95代码DO-216AA
JESD-30 代码R-PSSO-G1
JESD-609代码e0
元件数量1
端子数量1
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
认证状态Not Qualified
最大重复峰值反向电压20 V
表面贴装YES
技术SCHOTTKY
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子位置SINGLE
Base Number Matches1

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MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MBRM120ET3/D
Surface Mount
Schottky Power Rectifier
Data Sheet
MBRM120ET3
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
20 VOLTS
POWERMITE
®
Power Surface Mount Package
The Schottky Powermite employs the Schottky Barrier principle with a barrier metal
and epitaxial construction that produces optimal forward voltage drop–reverse current
tradeoff. The advanced packaging techniques provide for a highly efficient micro
miniature, space saving surface mount Rectifier. With its unique heatsink design, the
Powermite has the same thermal performance as the SMA while being 50% smaller in
footprint area, and delivering one of the lowest height profiles,
<
1.1 mm in the industry.
Because of its small size, it is ideal for use in portable and battery powered products such
as cellular and cordless phones, chargers, notebook computers, printers, PDAs and
PCMCIA cards. Typical applications are ac/dc and dc–dc converters, reverse battery
protection, and “Oring” of multiple supply voltages and any other application where
performance and size are critical.
Features:
Low Profile — Maximum Height of 1.1 mm
Small Footprint — Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel — 12,000 Units per Reel
Low Thermal Resistance with Direct Thermal Path of Die on Exposed Cathode Heat Sink
Mechanical Characteristics:
Powermite is JEDEC Registered as D0–216AA
Case: Molded Epoxy
Epoxy Meets UL94, VO at 1/8″
Weight: 62 mg (approximately)
Device Marking: BCV
Lead and Mounting Surface Temperature for Soldering Purposes. 260°C Maximum for 10 Seconds
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (At Rated VR, TC = 130°C)
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 20 kHz, TC = 135°C)
Non–Repetitive Peak Surge Current
(Non–Repetitive peak surge current, halfwave, single phase, 60 Hz)
Storage Temperature
Operating Junction Temperature
Voltage Rate of Change (Rated VR, TJ = 25°C)
Symbol
VRRM
VRWM
VR
IO
IFRM
IFSM
Tstg
TJ
dv/dt
Value
20
Unit
V
ANODE
CATHODE
CASE 457–04
ISSUE C
1.0
2.0
50
–65 to 150
–65 to 150
10,000
A
A
A
°C
°C
V/
m
s
°C/W
THERMAL CHARACTERISTICS
Thermal Resistance – Junction–to–Lead (Anode) (1)
Thermal Resistance – Junction–to–Tab (Cathode) (1)
Thermal Resistance – Junction–to–Ambient (1)
Rtjl
Rtjtab
Rtja
35
23
277
(1) Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 and 10.
POWERMITE is a registered trademark of MicroSemi Corporation
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Rev 2
©
Rectifier
Inc. 1998
Data
Motorola,
Device
1
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