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1N6267A Series
1500 Watt Mosorbt Zener
Transient Voltage
Suppressors
Unidirectional
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high-energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor's exclusive, cost‐ effective, highly reliable
Surmetict axial leaded package and are ideally‐suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Features
Cathode
Anode
AXIAL LEAD
CASE 41A
PLASTIC
•
•
•
•
•
•
•
•
MARKING DIAGRAM
A
1.5KE
xxxA
1N6
xxxA
YYWWG
G
= Assembly Location
= ON Device Code
= JEDEC Device Code
= Year
= Work Week
=
(See Table on Page 3)
G
= Pb-Free Package
(Note: Microdot may be in either location)
A
1.5KExxxA
1N6xxxA
YY
WW
Working Peak Reverse Voltage Range - 5.8 V to 214 V
Peak Power - 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
Pb-Free Packages are Available
Mechanical Characteristics
CASE:
Void‐free, transfer‐molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
ORDERING INFORMATION
Device
1.5KExxxA
1.5KExxxAG
1.5KExxxARL4
1.5KExxxARL4G
1N6xxxA
1N6xxxAG
1N6xxxARL4
1N6xxxARL4G
Package
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Axial Lead
Axial Lead
(Pb-Free)
Shipping
†
500 Units/Box
500 Units/Box
1500/Tape & Reel
1500/Tape & Reel
500 Units/Box
500 Units/Box
1500/Tape & Reel
1500/Tape & Reel
230°C, 1/16 in from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred
devices are recommended choices for future use
and best overall value.
1
June, 2007 - Rev. 9
Publication Order Number:
1N6267A/D
1N6267A Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1) @ T
L
≤
25°C
Steady State Power Dissipation
@ T
L
≤
75°C, Lead Length = 3/8 in
Derated above T
L
= 75°C
Thermal Resistance, Junction-to-Lead
Forward Surge Current (Note 2) @ T
A
= 25°C
Operating and Storage
Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
I
FSM
T
J
, T
stg
20
200
- 65 to +175
Unit
W
W
mW/°C
°C/W
A
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max., I
F
(Note 3) = 100 A)
Symbol
I
PP
V
C
V
RWM
I
R
V
BR
I
T
QV
BR
I
F
V
F
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
PP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Maximum Temperature Coefficient of V
BR
Forward Current
Forward Voltage @ I
F
V
C
V
BR
V
RWM
I
F
I
I
R
V
F
I
T
V
I
PP
Uni-Directional TVS
http://onsemi.com
2
1N6267A Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
JEDEC
Device
†
(Note 4)
1N6267A, G
1N6268A, G
1N6269A, G
1N6270A, G
1N6271A, G
1N6272A, G
1N6273A, G
1N6274A, G
1N6275A, G
1N6276A, G
1N6277A, G
1N6278A, G
1N6279A, G
1N6280A, G
1N6281A, G
1N6282A, G
1N6283A, G
1N6284A, G
1N6285A, G
1N6286A, G
1N6287A, G
1N6288A, G
1N6289A, G
1N6290A, G
1N6291A, G
1N6292A, G
1N6293A, G
1N6294A, G
1N6295A, G
1N6296A, G
1N6297A, G
1N6298A, G
1N6299A, G
1N6300A, G
1N6301A, G
1N6302A, G*
1N6303A, G
V
RWM
(Note 5)
(Volts)
5.8
6.4
7.02
7.78
8.55
9.4
10.2
11.1
12.8
13.6
15.3
17.1
18.8
20.5
23.1
25.6
28.2
30.8
33.3
36.8
40.2
43.6
47.8
53
58.1
64.1
70.1
77.8
85.5
94
102
111
128
136
145
154
171
185
214
Breakdown Voltage
I
R
@ V
RWM
(mA)
1000
500
200
50
10
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
V
BR
(Note 6)
(Volts)
Min
6.45
7.13
7.79
8.65
9.5
10.5
11.4
12.4
14.3
15.2
17.1
19
20.9
22.8
25.7
28.5
31.4
34.2
37.1
40.9
44.7
48.5
53.2
58.9
64.6
71.3
77.9
86.5
95
105
114
124
143
152
162
171
190
209
237
Nom
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
82
91
100
110
120
130
150
160
170
180
200
220
250
Max
7.14
7.88
8.61
9.55
10.5
11.6
12.6
13.7
15.8
16.8
18.9
21
23.1
25.2
28.4
31.5
34.7
37.8
41
45.2
49.4
53.6
58.8
65.1
71.4
78.8
86.1
95.5
105
116
126
137
158
168
179
189
210
231
263
@ I
T
(mA)
10
10
10
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
V
C
@ I
PP
(Note 7)
V
C
(Volts)
10.5
11.3
12.1
13.4
14.5
15.6
16.7
18.2
21.2
22.5
25.2
27.7
30.6
33.2
37.5
41.4
45.7
49.9
53.9
59.3
64.8
70.1
77
85
92
103
113
125
137
152
165
179
207
219
234
246
274
328
344
I
PP
(A)
143
132
124
112
103
96
90
82
71
67
59.5
54
49
45
40
36
33
30
28
25.3
23.2
21.4
19.5
17.7
16.3
14.6
13.3
12
11
9.9
9.1
8.4
7.2
6.8
6.4
6.1
5.5
4.6
5
QV
BR
(%/°C)
0.057
0.061
0.065
0.068
0.073
0.075
0.078
0.081
0.084
0.086
0.088
0.09
0.092
0.094
0.096
0.097
0.098
0.099
0.1
0.101
0.101
0.102
0.103
0.104
0.104
0.105
0.105
0.106
0.106
0.107
0.107
0.107
0.108
0.108
0.108
0.108
0.108
0.109
0.109
Device
†
1.5KE6.8A, G
1.5KE7.5A, G
1.5KE8.2A, G
1.5KE9.1A, G
1.5KE10A, G
1.5KE11A, G
1.5KE12A, G
1.5KE13A, G
1.5KE15A, G
1.5KE16A, G
1.5KE18A, G
1.5KE20A, G
1.5KE22A, G
1.5KE24A, G
1.5KE27A, G
1.5KE30A, G
1.5KE33A, G
1.5KE36A, G
1.5KE39A, G
1.5KE43A, G
1.5KE47A, G
1.5KE51A, G
1.5KE56A, G
1.5KE62A, G
1.5KE68A, G
1.5KE75A, G
1.5KE82A, G
1.5KE91A, G
1.5KE100A, G
1.5KE110A, G
1.5KE120A, G
1.5KE130A, G
1.5KE150A, G
1.5KE160A, G
1.5KE170A, G
1.5KE180A, G
1.5KE200A, G
1.5KE220A, G
1.5KE250A, G
Devices listed in
bold, italic
are ON Semiconductor Preferred devices.
Preferred
devices are recommended choices for future use and best overall value.
3. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
4. Indicates JEDEC registered data
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
6. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C
7. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
†The “G” suffix indicates Pb-Free package available.
*Not Available in the 1500/Tape & Reel
http://onsemi.com
3
1N6267A Series
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
PPK , PEAK POWER (kW)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ TA = 25
°
C
100
100
80
60
40
20
0
0
25
50
75
100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
10
1
0.1
ms
1
ms
10
ms
100
ms
1 ms
10 ms
t
P
, PULSE WIDTH
Figure 1. Pulse Rating Curve
Figure 2. Pulse Derating Curve
1N6373, ICTE‐5, MPTE‐5,
through
1N6389, ICTE‐45, C, MPTE‐45, C
10,000
MEASURED @
ZERO BIAS
10,000
1N6267A/1.5KE6.8A
through
1N6303A/1.5KE200A
MEASURED @
ZERO BIAS
1000
C, CAPACITANCE (pF)
MEASURED @ V
RWM
100
C, CAPACITANCE (pF)
1000
MEASURED @ V
RWM
100
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
10
1
10
100
1000
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
Figure 3. Capacitance versus Breakdown Voltage
PD , STEADY STATE POWER DISSIPATION (WATTS)
3/8″
5
4
3
2
1
0
0
25
50
75
100 125 150 175
T
L
, LEAD TEMPERATURE (°C)
200
0
0
IPP, VALUE (%)
3/8″
100
t
r
PEAK VALUE - I
PP
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
tr
≤
10
ms
HALF VALUE -
50
t
P
I
PP
2
1
2
t, TIME (ms)
3
4
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
http://onsemi.com
4
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