Datasheet> 器件分类 > 分立半导体> 晶体管> MNT-LB32P20

MNT-LB32P20: 产品描述Power Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN; 产品类别分立半导体晶体管; 文件大小30KB，共2页; 制造商TT Electronics plc; 官网地址http://www.ttelectronics.com/

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MNT-LB32P20概述

Power Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN

MNT-LB32P20规格参数

参数名称	属性值
包装说明	FLANGE MOUNT, R-PSFM-D5
Reach Compliance Code	unknown
ECCN代码	EAR99
外壳连接	ISOLATED
配置	COMPLEX
最小漏源击穿电压	200 V
最大漏极电流 (ID)	32 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSFM-D5
元件数量	4
端子数量	5
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	P-CHANNEL
认证状态	Not Qualified
表面贴装	NO
端子形式	SOLDER LUG
端子位置	SINGLE
晶体管应用	SWITCHING
晶体管元件材料	SILICON
Base Number Matches	1

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MNT - LB32P16

MNT - LB32P20

MECHANICAL DATA

Dimensions in mm

24.0

10.5

SMARTPACK POWER MODULE

7.0

POWER MOSFETS FOR

AUDIO APPLICATIONS

10.0

TYP

28.5

57.0

FEATURES

6.35

TYP

ł 4.25

• P - CHANNEL POWER MOSFETS

• HIGH SPEED SWITCHING

14.0

10.0

0.8

• SEMEFAB DESIGNED AND DIFFUSED

• HIGH VOLTAGE (160V & 200V)

43.5

• HIGH ENERGY RATING

• ENHANCEMENT MODE

• INTEGRAL PROTECTION DIODE

• N - CHANNEL AVAILABLE

CASE 2

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

DSX

Drain – Source Voltage

GSS

D(PK)

stg

θJC

Gate – Source Voltage

Continuous Drain Current

Body Drain Diode

Total Power Dissipation

Storage Temperature Range

Maximum Operating Junction Temperature

Thermal Resistance Junction – Case

@ T

case

= 25°C

LB32P16

-160V

±14V

- 32A

500W

–55 to 150°C

150°C

0.3°C/W

LB32P20

-200V

Magnatec.

Telephone +44(0)1455 554711.

Fax +44(0)1455 558843.

E-mail:

magnatec@semelab.co.uk

Website:

http://www.semelab.co.uk

Tentative 6/99

MNT-LB32P20相似产品对比

	MNT-LB32P20	MNT-LB32P16
描述	Power Field-Effect Transistor, 32A I(D), 200V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN	Power Field-Effect Transistor, 32A I(D), 160V, 4-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, CASE 2, 3 PIN
包装说明	FLANGE MOUNT, R-PSFM-D5	FLANGE MOUNT, R-PSFM-D5
Reach Compliance Code	unknown	unknown
ECCN代码	EAR99	EAR99
外壳连接	ISOLATED	ISOLATED
配置	COMPLEX	COMPLEX
最小漏源击穿电压	200 V	160 V
最大漏极电流 (ID)	32 A	32 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-PSFM-D5	R-PSFM-D5
元件数量	4	4
端子数量	5	5
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	FLANGE MOUNT
极性/信道类型	P-CHANNEL	P-CHANNEL
认证状态	Not Qualified	Not Qualified
表面贴装	NO	NO
端子形式	SOLDER LUG	SOLDER LUG
端子位置	SINGLE	SINGLE
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON

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