LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
• Pb-Free Package is Available.
LDTA143EET1
3
1
2
SC-89
PIN 1
BASE
(INPUT)
R
1
R
2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation,
FR–4 Board (Note 1.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 1.)
Total Device Dissipation,
FR–4 Board (Note 2.) @ TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0
×
1.0 Inch Pad
Symbol
PD
200
1.6
R
θJA
PD
300
2.4
R
θJA
TJ, Tstg
400
–55 to +150
mW
mW/°C
°C/W
°C
600
mW
mW/°C
°C/W
Max
Unit
DEVICE MARKING AND ORDERING INFORMATION
Device
LDTA143EET1
LDTA143EET1G
Marking
6J
6J
(Pb-Free)
Shipping
3000/Tape&Reel
3000/Tape&Reel
LDTA143EET1-1/3
LESHAN RADIO COMPANY, LTD.
LDTA143EET1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
BE
= 6.0 V)
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 3)
(I
C
= 2.0 mA, I
B
= 0)
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
–
–
–
50
50
–
–
–
–
–
100
500
1.5
–
–
nAdc
nAdc
mAdc
Vdc
Vdc
ON CHARACTERISTICS
(Note 3)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
Collector-Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 1 mA)
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
Input Resistor
Resistor Ratio
h
FE
V
CE(sat)
V
OL
V
OH
R
1
R
1
/R
2
15
27
–
–
–
0.25
0.2
–
6.1
1.2
Vdc
Vdc
Vdc
kΩ
–
4.9
3.3
0.8
–
–
4.7
1.0
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
LDTA143EET1-2/3
LESHAN RADIO COMPANY, LTD.
LDTA143EET1
SC-89
A
-X-
3
1
2
B -Y-
S
K
G
2 PL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
MILLIMETERS
MIN
NOM
MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10
_
−−−
−−−
10
_
1.50
1.60
1.70
INCHES
NOM
0.063
0.034
0.028
0.011
0.020 BSC
0.021 REF
0.006
0.016
0.043 REF
−−−
−−−
0.063
D
0.08 (0.003)
M
3 PL
X Y
M
C
N
J
-T-
SEATING
PLANE
DIM
A
B
C
D
G
H
J
K
L
M
N
S
MIN
0.059
0.030
0.024
0.009
0.004
0.012
−−−
−−−
0.059
MAX
0.067
0.040
0.031
0.013
0.008
0.020
10
_
10
_
0.067
H
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
LDTA143EET1–3/3
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