SG2822J概述

Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin,

SG2822J规格参数

参数名称	属性值
Reach Compliance Code	unknown
其他特性	LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	95 V
配置	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-30 代码	R-CDIP-T18
元件数量	8
端子数量	18
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	IN-LINE
极性/信道类型	NPN
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
VCEsat-Max	1.6 V
Base Number Matches	1

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SG2822J相似产品对比

	SG2822J	SG2822L/883B	SG2822J/883B	SG2822L	JAN2805J	SG2805L/883B	SG2805L
描述	Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin,	Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin,	Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 18 Pin,	Power Bipolar Transistor, 0.5A I(C), 95V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin,	Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon,	Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin,	Power Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 8-Element, NPN, Silicon, Ceramic, Metal-Sealed Cofired, 20 Pin,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
其他特性	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE	LOGIC LEVEL COMPATIBLE
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A	0.5 A
集电极-发射极最大电压	95 V	95 V	95 V	95 V	50 V	50 V	50 V
配置	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
JESD-30 代码	R-CDIP-T18	S-CQCC-N20	R-CDIP-T18	S-CQCC-N20	R-CDIP-T18	S-CQCC-N20	S-CQCC-N20
元件数量	8	8	8	8	8	8	8
端子数量	18	20	18	20	18	20	20
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	SQUARE	RECTANGULAR	SQUARE	RECTANGULAR	SQUARE	SQUARE
封装形式	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER	IN-LINE	CHIP CARRIER	CHIP CARRIER
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	NO	YES	NO	YES	YES
端子形式	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	NO LEAD	THROUGH-HOLE	NO LEAD	NO LEAD
端子位置	DUAL	QUAD	DUAL	QUAD	DUAL	QUAD	QUAD
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
VCEsat-Max	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V	1.6 V
极性/信道类型	NPN	-	NPN	NPN	NPN	NPN	NPN
Base Number Matches	1	1	1	1	-	-	-
参考标准	-	MIL	MIL	-	MIL	MIL	-

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