BL
FEATURES
GALAXY ELECTRICAL
SA5.0---SA170CA
BREAKDOWN VOLTAGE: 5.0 --- 170 V
PEAK PULSE POWER: 500 W
TRANSIENT VOLTAGE SUPPRESSOR
◇
Plastic package gas Underwriters Laboratory
Flammability Classification 94V-0
◇
Glass passivated junction
◇
500W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
◇
Excellent clamping capability
◇
Low incremental surge resistance
◇
Fast response time: typically less than 1.0ps from 0 Volts to
V
(BR)
for uni-directional and 5.0ns for bidirectional types
◇
Typical I
D
Less than 1 µA above 10V
◇
High temperature soldering guaranteed:265
℃/
10 seconds,
0.375"(9.5mm) lead length, 51bs. (2.3kg) tension
DO-15
MECHANICAL DATA
◇
Case:JEDEC DO-15, molded plastic body over
passivated junction
◇
Terminals: Axial leads, solderable per MIL-STD-750,
method 2026
◇
Polarity:Color band denotes positive end (cathode)
except bidirectionals
◇
Weight: 0.014 ounces, 0.39 grams
◇
Mounting position: Any
Dimensions in millimeters
DEVICES FOR BIDIRECTIONAL APPLICATIONS
For bidirectional use C or CA suffix. (e.g. SA5.0C, SA170CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
SYMBOL
Peak power power dissipation with a 10/1000µs waveform (NOTE 1, FIG.1)
Peak pulse current with a 10/1000µs waveform (NOTE 1,FIG.3)
Steady state power dissipation at T
L
=75℃
lead lengths 0.375"(9.5mm) (NOTE 2)
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load (JEDEC Method) (NOTE 3)
Maximum instantaneous forward voltage at 35A for unidirectional only (NOTE 3)
Operating junction and storage temperature range
VALUE
Minimum 500
SEE TABLE 1
1.0
70.0
3.5
-55---+150
UNIT
W
A
W
A
V
℃
www.galaxycn.com
P
PPM
I
PPM
P
M(AV)
I
FSM
V
F
T
J
, T
STG
NOTES: (1) Non-repetitive current pules, per Fig. 3 and derated above T
A
=25℃ per Fig. 2
(2) Mounted on copper pad area of 1.6" x 1.6"(40 x40mm
2
) per Fig. 5
(3) Measured of 8.3ms single half sine-wave or equare wave, duty cycle=4 pulses per minute maximum
Document Number 1785012
BL
GALAXY ELECTRICAL
1.
ELECTRICAL CHARACTERISTICS at(T
A
=25
Breakdown voltage
V
(BR)
(Volts) (NOTE1)
MIN
SA60
SA60A
SA64
SA64A
SA70
SA70A
SA75
SA75A
SA78
SA78A
SA85
SA85A
SA90
SA90A
SA100
SA100A
SA110
SA110A
SA120
SA120A
SA130
SA130A
SA150
SA150A
SA160
SA160A
SA170
SA170A
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
unle ss othe rw ise note d)
Maxim um
reverse
leakage
at V
WM
I
D
(NOTE3)
( A)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
TABLE 1(Cont'd)
Maxim um
clam ping
voltage at
I
PPM
V
C
(Volts)
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
230
209
268
243
257
259
304
275
Device Type
MAX
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
1209
Test
current
at
I
T
(m A)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Stand-off
voltage
V
WM
(Volts)
Maxim um
peak pulse
current
I
PPM
(NOTE 2)
(Am ps)
4.7
5.2
4.4
4.9
4.0
4.4
3.7
4.1
3.6
4.0
3.3
3.6
3.1
3.4
2.8
3.1
2.6
2.8
2.3
2.6
2.2
2.4
1.9
2.1
1.7
1.9
1.6
1.8
Maxim um
tem perature
coefficient
of V
(BR)
(m V/ )
80.0
71.0
86.0
76.0
94.0
85.0
101
91.0
105
95.0
114
103
121
110
135
123
148
133
162
146
175
158
203
184
217
196
230
208
60.0
60.0
64.0
64.0
70.0
70.0
75.0
75.0
78.0
78.0
85.0
85.0
90.0
90.0
100
100
110
110
120
120
130
130
150
150
160
160
170
170
NOTES:(1)V
(BR )
m eas ured after I
T
applied for 300m s .I
T
=s quare wave puls e or equivalent
(2)Surge current waveform per Fig.3 and derate per Fig.2
(3)For bidirectional types with V
WM
of 10Volts and les s ,the I
D
lim it is doubled.
(4) All term s and s ym bols are cons is tent with ANSI/IEEE C62.35
www.galaxycn.com
Document Number 1785012
BL
GALAXY ELECTRICAL
4.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
