DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BRY62
Silicon controlled switch
Product specification
Supersedes data of 1997 Jul 21
1999 Apr 22
Philips Semiconductors
Product specification
Silicon controlled switch
DESCRIPTION
Silicon planar PNPN switch in a
SOT143B plastic package. It is an
integrated PNP/NPN transistor pair,
with all electrodes accessible.
APPLICATIONS
•
Switching applications.
MARKING
TYPE
NUMBER
BRY62
MARKING
CODE
A51
1
Top view
2
MSB014
BRY62
PINNING
PIN
1
2
3
4
anode gate
anode
cathode
cathode gate
DESCRIPTION
handbook, 2 columns
4
3
a
ag
kg
k
MBB068
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
NPN transistor
V
CBO
V
CER
V
EBO
I
C
I
CM
I
E
I
ERM
V
CBO
V
CEO
V
EBO
I
E
I
ERM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
emitter current (DC)
repetitive peak emitter current
t
p
= 10
µs; δ
= 0.01
open emitter
open base
open collector
t
p
= 10
µs; δ
= 0.01
open emitter
R
BE
= 10 kΩ
open collector
note 1
note 2
−
−
−
−
−
−
−
−
−
−
−
−
70
70
5
175
175
−175
−2.5
−70
−70
−70
175
2.5
V
V
V
mA
mA
mA
A
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
collector-base voltage
collector-emitter voltage
emitter-base voltage
emitter current (DC)
repetitive peak emitter current
V
V
V
mA
A
1999 Apr 22
2
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL
Combined device
P
tot
T
stg
T
j
T
amb
Notes
PARAMETER
CONDITIONS
T
amb
≤
25
°C
−
MIN.
MAX.
UNIT
total power dissipation
storage temperature
junction temperature
operating ambient temperature
250
+150
150
+150
mW
°C
°C
°C
−65
−
see Fig.14
−65
1. Provided the I
E
rating is not exceeded.
2. During switching on, the device can withstand the discharge of a capacitor of a maximum value of 500 pF. This
capacitor is charged when the transistor is in cut-off condition, with a collector supply voltage of 160 V and a series
resistance of 100 kΩ.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
CONDITIONS
VALUE
500
UNIT
K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
NPN transistor
I
CER
I
EBO
V
CEsat
V
BEsat
h
FE
f
T
C
c
C
e
I
CEO
I
EBO
h
FE
V
AK
collector cut-off current
emitter cut-off current
collector-emitter saturation voltage
base-emitter saturation voltage
DC current gain
transition frequency
collector capacitance
emitter capacitance
V
CE
= 70 V; R
BE
= 10 kΩ
V
CE
= 70 V; R
BE
= 10 kΩ; T
j
= 150
°C
I
C
= 0; V
EB
= 5 V; T
j
= 150
°C
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 10 mA; V
CE
= 2 V
I
C
= 10 mA; V
CE
= 2 V; f = 100 MHz
I
E
= i
e
= 0; V
CB
= 20 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
I
B
= 0; V
CE
=
−70
V; T
j
= 150
°C
I
C
= 0; V
EB
=
−70
V; T
j
= 150
°C
I
E
= 1 mA; V
CB
=
−5
V
R
KG-K
= 10 kΩ
I
A
= 50 mA; I
AG
= 0
I
A
= 50 mA; I
AG
= 0; T
j
=
−
55
°C
I
A
= 1 mA; I
AG
= 10 mA
I
H
holding current
R
KG-K
= 10 kΩ; I
AG
= 10 mA;
V
BB
=
−2
V; (see Fig.5)
3
−
−
−
−
1.4
1.9
1.2
1
V
V
V
mA
−
−
−
−
−
50
100
−
−
−
−
3
100
10
10
500
900
−
−
5
25
−10
−10
15
MHz
pF
pF
µA
µA
nA
µA
µA
mV
mV
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PNP transistor
collector cut-off current
emitter cut-off current
DC current gain
Combined device
forward on-state voltage
1999 Apr 22
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
SYMBOL
Switching times
t
on
PARAMETER
CONDITIONS
V
KG-K
=
−0.5
to 4.5 V; R
KG-K
= 1 kΩ;
see Figs 6 and 7
V
KG-K
=
−0.5
to 0.5 V; R
KG-K
= 10 kΩ
R
KG-K
= 10 kΩ; see Figs 8 and 9
MIN.
−
−
−
MAX.
UNIT
µs
µs
µs
turn-on time
0.25
1.5
15
t
off
turn-off time
a (anode)
(e
2
)
e
2
handbook, halfpage
PNP transistor
ag (anode gate)
(c
1
,b
2
)
b
1
,c
2
P
N
P
kg (cathode gate)
(b
1
,c
2
)
NPN transistor
e
1
k (cathode)
(e
1
)
MBB680
N
P
N
MBB681
c
1
,b
2
Fig.2 Two transistor equivalent circuit.
Fig.3 PNPN silicon controlled switch structure.
1999 Apr 22
4
Philips Semiconductors
Product specification
Silicon controlled switch
BRY62
handbook, halfpage
a
IA
IKG
IAG
ag
VAK
−I
K
k
MBB682
handbook, halfpage
IA
a
RKG-K
VBB
kg
k
IAG
ag
DUT
kg
MBB683
Fig.4 Silicon controlled switch symbol.
Fig.5 Equivalent test circuit for holding current.
i
handbook, halfpage
4.5
V
(V)
MBB687
90 %
handbook, halfpage
+12
V
2.7 kΩ
16 kΩ
RKG-K
VAK
+50
V
0
–0.5
10 %
time
VI
VAG-K
MBB685
ton
time
Fig.7
Fig.6 Test circuit for turn-on time.
Pulse duration increased until dashed curve
disappears.
1999 Apr 22
5
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