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S-LMSD103BT1G

产品描述Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon,
产品类别分立半导体    二极管   
文件大小134KB,共3页
制造商LRC
官网地址http://www.lrc.cn
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S-LMSD103BT1G概述

Rectifier Diode, Schottky, 1 Element, 0.35A, 30V V(RRM), Silicon,

S-LMSD103BT1G规格参数

参数名称属性值
厂商名称LRC
包装说明R-PDSO-G2
Reach Compliance Codeunknown
ECCN代码EAR99
Is SamacsysN
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-G2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-65 °C
最大输出电流0.35 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大功率耗散0.4 W
参考标准AEC-Q101
最大重复峰值反向电压30 V
最大反向恢复时间0.01 µs
表面贴装YES
技术SCHOTTKY
端子形式GULL WING
端子位置DUAL
Base Number Matches1

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LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER SWITCHING DIODE
Features
·
·
·
·
·
·
Low Forward Voltage Drop
Guard Ring Construction for
Transient Protection
Negligible Reverse Recovery Time
Low Reverse Capacitance
Also Available in Lead Free Version
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Case: SOD-123, Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Polarity: Cathode Band
Leads: Solderable per MIL-STD-202,
Method 208
Also Available in Lead Free Plating
(Matte Tin Finish). Please See
Ordering Information, Note 4, on Page 2
Marking: Type Code only or Date Code and
Type Code
LMSD103AT1G
LMSD103BT1G
LMSD103CT1G
Weight: 0.01 grams (approx.)
Type Codes:
S4
S5
S6
LMSD103*T1G
S-LMSD103*T1G
1
2
Mechanical Data
·
·
·
·
·
·
·
·
·
SOD-123
Equivalent Circuit Diagram
1
2
Cathode
Anode
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
FM
@ t
£
1.0s
I
FSM
P
d
R
qJA
T
j
, T
STG
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current (Note 1)
Non-Repetitive Peak Forward Surge Current
Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
LMSD103AT1G LMSD103BT1G LMSD103CT1G
40
28
30
21
350
1.5
400
300
-65 to +125
20
14
Unit
V
V
mA
A
mW
°C/W
°C
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
@ T
A
= 25°C unless otherwise specified
Symbol
LMSD103AT1G
LMSD103BT1G
LMSD103CT1G
V
(BR)R
V
FM
LMSD103AT1G
LMSD103BT1G
LMSD103CT1G
I
RM
C
T
t
rr
Min
40
30
20
¾
¾
¾
¾
Typ
¾
¾
¾
28
10
Max
¾
0.37
0.60
5.0
¾
¾
Unit
V
V
mA
pF
ns
Test Condition
I
R
= 100mA
I
F
= 20mA
I
F
= 200mA
V
R
= 30V
V
R
= 20V
V
R
= 10V
V
R
= 0V, f = 1.0MHz
I
F
= I
R
= 200mA,
I
rr
= 0.1 x I
R
, R
L
= 100W
Forward Voltage Drop (Note 2)
Peak Reverse Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
2. Short duration test pulse used to minimize self-heating effect.
Rev.O 1/3

 
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