Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | TT Electronics plc |
| 包装说明 | FLANGE MOUNT, R-MSFM-T3 |
| Reach Compliance Code | compliant |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V |
| 最大漏极电流 (ID) | 3.7 A |
| 最大漏源导通电阻 | 1.84 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-T3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | METAL |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14 A |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| IRFY430-QR-EB | IRFY430R1 | IRFY430 | IRFY430M | IRFY430-JQR-B | |
|---|---|---|---|---|---|
| 描述 | Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Power Field-Effect Transistor, 3.7A I(D), 500V, 1.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, |
| 厂商名称 | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc | TT Electronics plc |
| 包装说明 | FLANGE MOUNT, R-MSFM-T3 | FLANGE MOUNT, R-MSFM-T3 | FLANGE MOUNT, R-MSFM-T3 | FLANGE MOUNT, R-MSFM-T3 | FLANGE MOUNT, R-MSFM-T3 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compli |
| 其他特性 | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY | HIGH RELIABILITY |
| 外壳连接 | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 500 V | 500 V | 500 V | 500 V | 500 V |
| 最大漏极电流 (ID) | 3.7 A | 3.7 A | 3.7 A | 3.7 A | 3.7 A |
| 最大漏源导通电阻 | 1.84 Ω | 1.84 Ω | 1.84 Ω | 1.84 Ω | 1.84 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-MSFM-T3 | R-MSFM-T3 | R-MSFM-T3 | R-MSFM-T3 | R-MSFM-T3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| 封装主体材料 | METAL | METAL | METAL | METAL | METAL |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 最大脉冲漏极电流 (IDM) | 14 A | 14 A | 14 A | 14 A | 14 A |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | NO | NO | NO | NO |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
| 是否Rohs认证 | 不符合 | 符合 | 不符合 | - | 不符合 |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | - | NOT SPECIFIED |
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