D2
PA
K
BUK763R4-30B
N-channel TrenchMOS standard level FET
Rev. 2 — 21 April 2011
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
AEC Q101 compliant
Suitable for standard level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
1.3 Applications
12 V loads
Automotive systems
General purpose power switching
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C;
see
Figure 12;
see
Figure 13
I
D
= 75 A; V
sup
≤
30 V;
R
GS
= 50
Ω;
V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
[1]
Min
-
-
-
-
Typ
-
-
-
2.9
Max Unit
30
75
255
3.4
V
A
W
mΩ
Static characteristics
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
-
-
1.3
J
[1]
Continuous current is limited by package.
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol Description
G
D
S
D
gate
drain
source
mounting base;
connected to drain
2
1
3
mb
D
Simplified outline
Graphic symbol
G
mbb076
S
SOT404 (D2PAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK763R4-30B
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK);
3 leads (one lead cropped)
Version
SOT404
Type number
BUK763R4-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 21 April 2011
2 of 14
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
4. Limiting values
Table 4.
Symbol
V
DS
V
DGR
V
GS
I
D
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
mb
= 25 °C; V
GS
= 10 V;
see
Figure 1;
see
Figure 4
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1;
see
Figure 4
I
DM
P
tot
T
stg
T
j
I
S
I
SM
E
DS(AL)S
E
DS(AL)R
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
repetitive drain-source
avalanche energy
T
mb
= 25 °C
pulsed; t
p
≤
10 µs; T
mb
= 25 °C
I
D
= 75 A; V
sup
≤
30 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
see
Figure 3
[4][5][6][
7]
[2][3]
[1]
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 kΩ
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
Max
30
30
20
75
75
198
794
255
175
175
198
75
794
1.3
-
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
J
[1]
[2][3]
T
mb
= 25 °C; pulsed; t
p
≤
10 µs;
see
Figure 4
T
mb
= 25 °C; see
Figure 2
Source-drain diode
Avalanche ruggedness
[1]
[2]
[3]
[4]
[5]
[6]
[7]
Continuous current is limited by package.
Current is limited by power dissipation chip rating.
Refer to document 9397 750 12572 for further information.
Maximum value not quoted. Repetitive rating defined in avalanche rating figure.
Single-shot avalanche rating limited by maximum junction temperature of 175 °C.
Repetitive avalanche rating limited by an average junction temperature of 170 °C.
Refer to application note AN10273 for further information.
BUK763R4-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 21 April 2011
3 of 14
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
250
I
D
(A)
200
003aab196
120
P
der
(%)
80
03na19
150
100
(1)
40
50
0
0
50
100
150
T
j
(°C)
200
0
0
50
100
150
T
mb
(°C)
200
Fig 1.
Continuous drain current as a function of
mounting base temperature
10
2
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aab195
(1)
I
AL
(A)
(2)
10
(3)
1
10
-3
10
-2
10
-1
1
t
AL
(ms)
10
Fig 3.
Single shot and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK763R4-30B
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 21 April 2011
4 of 14
NXP Semiconductors
BUK763R4-30B
N-channel TrenchMOS standard level FET
10
4
I
D
(A)
10
3
limit R
DSon
003aab185
= V
DS
/ I
D
t
p
= 10
μ
s
100
μ
s
(1)
DC
10 ms
1 ms
10
2
10
100 ms
1
10
-1
1
10
V
DS
(V)
10
2
Fig 4.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
mounted on a printed-circuit
board; minimum footprint;
vertical in still air
Conditions
Min
-
-
Typ
-
50
Max
0.59
-
Unit
K/W
K/W
1
Z
th(j-mb)
(K/W)
10
-1
003aab186
δ
= 0.5
0.2
0.1
0.05
0.02
P
t
p
T
10
-2
δ
=
single shot
t
p
T
t
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 5.
BUK763R4-30B
Transient thermal impedance from junction to mounting base as a function of pulse duration
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 21 April 2011
5 of 14
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