MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Microwave Long Pulse
Power Transistor
Designed for 960 – 1215 MHz long or short pulse common base amplifier
applications such as JTIDS and Mode–S transmitters.
•
Guaranteed Performance @ 960 MHz, 36 Vdc
Output Power = 30 Watts Peak
Minimum Gain = 9.0 dB Min (9.5 dB Typ)
•
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•
Hermetically Sealed Industry Standard Package
•
Silicon Nitride Passivated
•
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•
Internal Input Matching for Broadband Operation
MRF10031
30 W (PEAK)
960 – 1215 MHz
MICROWAVE POWER
TRANSISTOR
NPN SILICON
CASE 376B–02, STYLE 1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage (1)
Emitter–Base Voltage
Collector Current — Continuous (1)
Total Device Dissipation @ TC = 25°C (1), (2)
Derate above 25°C
Storage Temperature Range
Junction Temperature
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
TJ
Value
55
55
3.5
3.0
110
0.625
– 65 to + 200
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
°C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (3)
Symbol
R
θJC
Max
1.6
Unit
°C/W
NOTES:
1. Under pulse RF operating conditions.
2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF
amplifiers.
3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case
θ
JC value
measured @ 23% duty cycle)
REV 6
MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA
MRF10031
5.2–437
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0)
Collector–Base Breakdown Voltage (IC = 25 mAdc, IE = 0)
Emitter–Base Breakdown Voltage (IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current (VCB = 36 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
55
55
3.5
—
—
—
—
—
—
—
—
2.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 500 mAdc, VCE = 5.0 Vdc)
hFE
20
—
—
—
FUNCTIONAL TESTS
(10
µs
Pulses @ 50% duty cycle for 3.5 ms; overall duty cycle – 25%)
Common–Base Amplifier Power Gain
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
Collector Efficiency
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz)
Load Mismatch
(VCC = 36 Vdc, Pout = 30 W Peak, f = 960 MHz,
VSWR = 10:1 All Phase Angles)
GPB
η
ψ
9.0
40
9.5
45
—
—
dB
%
No Degradation in Output Power
C2
Z5
RF INPUT
Z1
Z2
Z3
Z4
D.U.T.
Z6
Z7
L1
C3
C4
+
+
36 Vdc
–
RF OUTPUT
Z8
Z9
C1
C1 — 75 pF 100 Mil Chip Capacitor
C2 — 39 pF 100 Mil Chip Capacitor
C3 — 0.1
µF
C4 — 1000
µF,
50 Vdc, Electrolytic
L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long
Z1 – Z9 — Microstrip, See Details
Board Material — Teflon, Glass Laminate
Dielectric Thickness = 0.030″
ε
r = 2.55, 2 Oz. Copper
1.020
BROADBAND FIXTURE
.628
2.138
.223
.118
.389
.083
.780
.733
.669
.083
.400
.113
2.050
1.350
.215
.354
.218
.100
.083
1.210
.128
Figure 1. Test Circuit
MRF10031
5.2–438
MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA
100
90
POUT, OUTPUT POWER (WATTS)
80
70
1090
60
50
40
30
20
10
1
2
3
4
5
6
7
PIN, INPUT POWER (WATTS)
8
9
10
1215
f = 960 MHz
VCC = 36 VOLTS
Figure 2. Output Power versus Input Power
1025
1090
f = 960 MHz
Zin
1155
1220
Zo = 10
Ω
1220
1090
1155
1025
f = 960 MHz
Pout = 30 W Pk VCC = 36 V
f
MHz
960
1025
1090
1155
1220
Zin
Ohms
2.05 + j5.24
2.67 + j6.34
24.0
+ j7.14
25.5
+ j6.24
25.7
+ j4.34
ZOL*
Ohms
22.9
– j2.35
2.55 – j1.35
2.52 – j0.95
22.6
– j0.65
22.8
– j0.35
ZOL*
ZOL* = Conjugate of the optimum load
impedance into which the device operates at
a given output power, voltage, and frequency.
Figure 3. Series Equivalent Input/Output Impedances
MOTOROLA WIRELESS RF, IF AND TRANSMITTER DEVICE DATA
MRF10031
5.2–439
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
