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MRF1015MB

产品描述RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN
产品类别分立半导体    晶体管   
文件大小110KB,共4页
制造商Motorola ( NXP )
官网地址https://www.nxp.com
下载文档 详细参数 全文预览

MRF1015MB概述

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN

MRF1015MB规格参数

参数名称属性值
厂商名称Motorola ( NXP )
Reach Compliance Codeunknown
Is SamacsysN
外壳连接BASE
最大集电极电流 (IC)1 A
基于收集器的最大容量7.5 pF
配置SINGLE
最小直流电流增益 (hFE)10
最高频带L BAND
JESD-30 代码O-CRDB-F4
元件数量1
端子数量4
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状ROUND
封装形式DISK BUTTON
极性/信道类型NPN
最小功率增益 (Gp)10 dB
认证状态Not Qualified
表面贴装YES
端子形式FLAT
端子位置RADIAL
晶体管应用AMPLIFIER
晶体管元件材料SILICON
Base Number Matches1

文档预览

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1015MA/D
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
Guaranteed Performance @ 1090 MHz, 50 Vdc
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°C
Storage Temperature Range
Symbol
VCES
VCBO
VEBO
IC
PD
Tstg
Value
60
60
4.0
1.0
17.5
100
– 65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/°C
°C
MRF1015MA
MRF1015MB
15 W (PEAK), 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
CASE 332–04, STYLE 1
MRF1015MA
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
θJC
Max
10
Unit
°C/W
CASE 332A–03, STYLE 1
MRF1015MB
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 10 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
V(BR)CES
V(BR)CBO
V(BR)EBO
ICBO
60
60
4.0
1.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 250 mAdc, VCE = 5.0 Vdc)
hFE
10
40
100
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
©
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF1015MA MRF1015MB
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