MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR571LT1/D
The RF Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range front–end amplifiers and
low–noise VCO’s. Available in a surface–mountable plastic packages. This
Motorola series of small–signal plastic transistors offers superior quality and
performance at low cost.
•
High Gain–Bandwidth Product
fT = 8.0 GHz (Typ) @ 50 mA
•
Low Noise Figure
NFmin = 1.6 dB (Typ) @ f = 1.0 GHz (MRF5711LT1, MRF571)
•
High Gain
GNF = 17 dB (Typ) @ 30 mA/500 MHz (MMBR571LT1)
•
High Power Gain
Gpe (matched) = 13.5 dB (Typ) (MRF5711LT1)
•
State–of–the–Art Technology
Fine Line Geometry
Ion–Implanted Arsenic Emitters
Gold Top Metallization and Wires
Silicon Nitride Passivation
•
Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
MMBR571LT1
MRF5711LT1
IC = 80 mA
LOW NOISE
HIGH–FREQUENCY
TRANSISTORS
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE
MMBR571LT1
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ Tcase = 75°C
Derate linearly above Tcase = 75°C @
Operating and Storage Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD(max)
0.33
4.44
Tstg
– 55 to
+150
W
mW/°C
°C
Value
10
20
3.0
80
Unit
Vdc
Vdc
Vdc
mA
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE
MRF5711LT1
THERMAL CHARACTERISTICS
Rating
Thermal Resistance, Junction to Case
MRF5711LT1, MMBR571LT1
Maximum Junction Temperature
Symbol
R
θJC
TJmax
Max
225
150
Unit
°C/W
°C
DEVICE MARKING
MMBR571LT1 = 7X
MRF5711LT1 = 02
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 9
MOTOROLA RF
©
Motorola, Inc. 1998
DEVICE DATA
MMBR571LT1 MRF5711LT1
1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0)
Collector–Base Breakdown Voltage (IC = 0.1 mA, IE = 0)
Emitter–Base Breakdown Voltage (IE = 50
µAdc,
IC = 0)
Collector Cutoff Current (VCB = 8.0 Vdc, IE = 0)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
hFE
Ccb
MMBR571LT1
MRF5711LT1,
fT
MMBR571LT1
MRF5711LT1
—
—
8.0
8.0
—
—
—
—
0.7
0.75
1.0
1.0
GHz
10
20
2.5
—
12
—
—
—
—
—
—
10
Vdc
Vdc
Vdc
µAdc
ON CHARACTERISTICS
DC Current Gain (IC = 30 mAdc, VCE = 5.0 Vdc)
50
—
300
—
DYNAMIC CHARACTERISTICS
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
(VCB = 6.0 Vdc, IE = 0, f = 1.0 MHz)
Current Gain–Bandwidth Produc
(VCE = 5.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
(VCE = 8.0 Vdc, IC = 50 mAdc, f = 1.0 GHz)
pF
FUNCTIONAL TESTS
Gain @ Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 10 mA, VCE = 6.0 Vdc)
Noise Figure
(IC = 10 mAdc, VCE = 5.0 Vdc)
(IC = 10 mAdc, VCE = 6.0 Vdc)
Noise Figure
(VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
GNF
MMBR571LT1
MRF5711LT1
MMBR571LT1
MRF5711LT1
MRF5711LT1
|S21|2
9.0
10
—
dB
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
NF
f = 0.5 GHz
f = 1.0 GHz
f = 1.0 GHz
NFmin
—
—
—
—
2.0
2.6
2.2
1.6
—
—
—
—
dB
—
—
—
16.5
10.5
13.5
—
—
—
dB
dB
Power Gain in 50
Ω
System (VCE = 6.0 V, IC = 10 mA, f = 1.0 GHz)
MRF5711LT1
TYPICAL CHARACTERISTICS
MMBR571LT1
25
G A MAX, MAXIMUM AVAILABLE GAIN (dB)
GAMAX
f T, CURRENT GAIN-BANDWIDTH PRODUCT (GHz)
10
20
+
||S21|| (k
"
12
S
(k2
–
1) ), k
w
1
8
15
VCE = 5 V
IC = 30 mA
6
10
4
5
2
VCE = 5 V
f = 1 GHz
0
10
20
30
40
50
60
70
80
90
100
0
0.4
0.6
1
2
f, FREQUENCY (GHz)
3
0
IC, COLLECTOR CURRENT (mA)
Figure 1. Maximum Available Gain
versus Frequency
Figure 2. Current Gain–Bandwidth versus
Collector Current @ 1.0 GHz
MMBR571LT1 MRF5711LT1
2
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MMBR571LT1
SOT–23 MMBR571LT1
Ccb , C ob, OUTPUT CAPACITANCES (pF)
2.5
SOT–23 MMBR571LT1
Cib, INPUT CAPACITANCE (pF)
4
2
3
1.5
Cob
Ccb
0.5
f = 1 MHz
0
0
1
2
3
4
5
6
7
8
9
10
2
Cib
1
f = 1 MHz
0
0
1
2
3
1
VBE, BASE–EMITTER VOLTAGE (Vdc)
Vcb, COLLECTOR–BASE VOLTAGE (Vdc)
Figure 3. Input Capacitance versus
Emitter Base Voltage
SOT–23 MMBR571LT1
5
Figure 4. Output Capacitances versus
Collector–Base Voltage
SOT–23 MMBR571LT1
20
G NF , GAIN AT NOISE FIGURE (dB)
16
f = 500 MHz
NF, NOISE FIGURE (dB)
4
f = 1 GHz
12
1 GHz
8
3
2
f = 500 MHz
4
VCE = 5 V
0
0
10
20
30
40
50
1
VCE = 5 V
0
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Gain at Noise Figure versus
Collector Current
SOT–23 MMBR571LT1
25
G NF , GAIN AT NOISE FIGURE (dB)
5
30
Figure 6. Noise Figure versus Collector Current
SOT–23 MMBR571LT1
|S21|2
GUMAX =
(1 – |S11|2)(1 – |S22|2)
GNF
15
G U MAX AND |S21 | 2 (dB)
NF, NOISE FIGURE (dB)
20
VCE = 5 V
IC = 10 mA
4
25
3
2
20
GUMAX
15
|S21|2
VCE = 5 V
IC = 30 mA
10
NF
5
1
10
0
0.2
0.3
0.5
f, FREQUENCY (GHz)
1
1.5
0
2
5
0.2
0.3
0.6
f, FREQUENCY (GHz)
1
1.5
2
Figure 7. Gain at Noise Figure and Noise
Figure versus Frequency
MOTOROLA RF DEVICE DATA
Figure 8. Maximum Unilateral Gain and
Insertion Gain versus Frequency
MMBR571LT1 MRF5711LT1
3
TYPICAL CHARACTERISTICS
MRF5711LT1
C cb, COLLECTOR-BASE CAPACITANCE (pF)
2
5
VCE = 6 Vdc
IC = 5 mA
CKT = HP 11608A
Zo = 50
Ω
Γ
S =
Γ
L = 0
NF
NF, NOISE FIGURE (dB)
10
1.6
f = 1 MHz
4
1.2
3
0.8
2
0.4
0
0
2
4
6
8
Vcb, COLLECTOR–BASE VOLTAGE (VOLTS)
1
0
0.15 0.2
0.5
1
2
f, FREQUENCY (GHz)
Figure 9. Collector–Base Capacitance
versus Collector–Base Voltage
VBE
D.U.T.
RF INPUT
*BIAS
TEE
**SLUG TUNER
Figure 10. 50
W
Noise Figure
versus Frequency
VCE = 6 Vdc
*MICROLAB
*HW–XXN
*AS
APPLICABLE
RF OUTPUT
*
**SLUG TUNER
*BIAS
TEE
**MICROLAB/FXR
**SF
— 11N < 1 GHz
**SF
— 31N > 1 GHz
Figure 11. Functional Circuit Schematic
MMBR571LT1 MRF5711LT1
4
MOTOROLA RF DEVICE DATA
TYPICAL CHARACTERISTICS
MRF5711LT1
40
VCE = 6 Vdc
IC = 5 mA
CKT = FIGURE 3
5
16
NF, NOISE FIGURE (dB)
12
G NF , GAIN (dB)
24
GNF
16
NF
3
8
NF
4
4
3
2
1
2
8
1
0
0.15 0.2
0.5
1
f, FREQUENCY (GHz)
2
0
0
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 12. Gain and Noise Figure
versus Frequency
Figure 13. Gain and Noise Figure
versus Collector Current
24
GNF
VCE = 6 Vdc
f = 500 MHz
CKT = FIGURE 3
NF, NOISE FIGURE (dB)
f T, GAIN BANDWIDTH PRODUCT (GHz)
10
f = 1 GHz
VCE = 8 Vdc
Zo = 50
Ω
18
G NF , GAIN (dB)
8
6
12
4
3
4
6
NF
2
1
2
0
0
0
10
20
30
IC, COLLECTOR CURRENT (mA)
40
50
0
20
40
60
80
IC, COLLECTOR CURRENT (mA)
100
Figure 14. Gain and Noise Figure
versus Collector Current
Figure 15. Gain Bandwidth Product
versus Collector Current
40
G Umax AND |S 21| 2, GAIN (dB)
|S21|2
GUmax =
(1 – |S11|2)(1 – |S22|2)
VCE = 8 Vdc
IC = 50 mA
Zo = 50
Ω
32
Zo = 50
Ω
VCE = 6 Vdc
24
500 MHz
16
1 GHz
8
f = 200 MHz
32
24
|S21|2
GUmax
16
|S 21| 2, INSERTION GAIN (dB)
8
2 GHz
0
0.15 0.2
0.5
1
f, FREQUENCY (GHz)
2
0
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 16. GUmax and |S21|2
versus Frequency
MOTOROLA RF DEVICE DATA
Figure 17. Insertion Gain versus
Collector Current
MMBR571LT1 MRF5711LT1
5
NF, NOISE FIGURE (dB)
32
G NF , GAIN (dB)
4
GNF
VCE = 6 Vdc
f = 1 GHz
CKT = FIGURE 3
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