DTA144TE: 产品描述PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523; 产品类别分立半导体晶体管; 文件大小186KB，共3页; 制造商Galaxy Microelectronics

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DTA144TE概述

PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523

DTA144TE规格参数

参数名称	属性值
厂商名称	Galaxy Microelectronics
包装说明	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
Is Samacsys	N
最大集电极电流 (IC)	0.1 A
集电极-发射极最大电压	50 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	100
JESD-30 代码	R-PDSO-G3
元件数量	1
端子数量	3
最高工作温度	150 °C
最低工作温度	-55 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	GULL WING
端子位置	DUAL
晶体管元件材料	SILICON
标称过渡频率 (fT)	250 MHz
Base Number Matches	1

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Production specification

Digital Transistor

FEATURES



Epitaxial planar die construction.

Complementary NPN types available(DTC).

Built-in biasing resistors,R

only.

Also available in lead free version.

DTAXXXTE

Lead-free

APPLICATIONS



The PNP style digital transistor.

SOT-523

ORDERING INFORMATION

Type No.

DTA114TE

DTA143TE

DTA144TE

Marking

Package Code

SOT-523

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

CEO

EBO

(Max.)

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Thermal Resistance, Junction to Ambient Air

Operating and Storage and Temperature Range

Value

-50

-5

-100

150

625

-55 to +150

Units

℃/W

℃

H037

Rev.A

www.gmesemi.com

DTA144TE相似产品对比

	DTA144TE	DTA114TE
描述	PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 47K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523	PNP Bipolar Digital Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 10K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 150mW; Package: SOT-523
厂商名称	Galaxy Microelectronics	Galaxy Microelectronics
包装说明	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown	unknown
Is Samacsys	N	N
最大集电极电流 (IC)	0.1 A	0.1 A
集电极-发射极最大电压	50 V	50 V
配置	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	100	100
JESD-30 代码	R-PDSO-G3	R-PDSO-G3
元件数量	1	1
端子数量	3	3
最高工作温度	150 °C	150 °C
最低工作温度	-55 °C	-55 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP
表面贴装	YES	YES
端子形式	GULL WING	GULL WING
端子位置	DUAL	DUAL
晶体管元件材料	SILICON	SILICON
标称过渡频率 (fT)	250 MHz	250 MHz
Base Number Matches	1	1

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