Cache DRAM Module, 1MX16, 13ns, CMOS, CQFP200, 1.45 X 1.45 INCH, CERAMIC, HERMETIC SHEILD, QFP-200
| 参数名称 | 属性值 |
| 厂商名称 | Cobham PLC |
| 包装说明 | QFP, QFP200,1.6SQ |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| Is Samacsys | N |
| 访问模式 | DUAL BANK PAGE BURST |
| 最长访问时间 | 13 ns |
| 其他特性 | AUTO/SELF REFRESH |
| 最大时钟频率 (fCLK) | 50 MHz |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-XQFP-G200 |
| 长度 | 36.83 mm |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | CACHE DRAM MODULE |
| 内存宽度 | 16 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 200 |
| 字数 | 1048576 words |
| 字数代码 | 1000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 125 °C |
| 最低工作温度 | -55 °C |
| 组织 | 1MX16 |
| 输出特性 | 3-STATE |
| 封装主体材料 | CERAMIC |
| 封装代码 | QFP |
| 封装等效代码 | QFP200,1.6SQ |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLATPACK |
| 电源 | 3.3 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 筛选级别 | MIL-PRF-38534 |
| 座面最大高度 | 2.921 mm |
| 自我刷新 | YES |
| 最大待机电流 | 0.04 A |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 3 V |
| 标称供电电压 (Vsup) | 3.3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | MILITARY |
| 端子形式 | GULL WING |
| 端子节距 | 0.635 mm |
| 端子位置 | QUAD |
| 宽度 | 36.83 mm |
| Base Number Matches | 1 |
| ACT-D1M96S-020F20Q | ACT-D1M96S-020F20T | ACT-D1M96S-020F20C | ACT-D1M96S-020F20I | ACT-D1M96S-020F20M | |
|---|---|---|---|---|---|
| 描述 | Cache DRAM Module, 1MX16, 13ns, CMOS, CQFP200, 1.45 X 1.45 INCH, CERAMIC, HERMETIC SHEILD, QFP-200 | Synchronous DRAM Module, 1MX96, 13ns, CMOS, CQFP200, 1.450 X 1.450 INCH, CAVITY-UP, CERAMIC, QFP-200 | Synchronous DRAM Module, 1MX96, 13ns, CMOS, CQFP200, 1.450 X 1.450 INCH, CAVITY-UP, CERAMIC, QFP-200 | Cache DRAM Module, 1MX16, 13ns, CMOS, CQFP200, 1.45 X 1.45 INCH, CERAMIC, HERMETIC SHEILD, QFP-200 | Synchronous DRAM Module, 1MX96, 13ns, CMOS, CQFP200, 1.450 X 1.450 INCH, CAVITY-UP, CERAMIC, QFP-200 |
| 厂商名称 | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC |
| 包装说明 | QFP, QFP200,1.6SQ | QFP, QFP200,1.6SQ | QFP, QFP200,1.6SQ | QFP, QFP200,1.6SQ | QFP, QFP200,1.6SQ |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Is Samacsys | N | N | N | N | N |
| 访问模式 | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST | DUAL BANK PAGE BURST |
| 最长访问时间 | 13 ns | 13 ns | 13 ns | 13 ns | 13 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO REFRESH | AUTO REFRESH | AUTO/SELF REFRESH | AUTO REFRESH |
| 最大时钟频率 (fCLK) | 50 MHz | 50 MHz | 50 MHz | 50 MHz | 50 MHz |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-XQFP-G200 | S-CQFP-G200 | S-CQFP-G200 | R-XQFP-G200 | S-CQFP-G200 |
| 长度 | 36.83 mm | 36.83 mm | 36.83 mm | 36.83 mm | 36.83 mm |
| 内存密度 | 16777216 bit | 100663296 bit | 100663296 bit | 16777216 bit | 100663296 bit |
| 内存集成电路类型 | CACHE DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | CACHE DRAM MODULE | SYNCHRONOUS DRAM MODULE |
| 内存宽度 | 16 | 96 | 96 | 16 | 96 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 200 | 200 | 200 | 200 | 200 |
| 字数 | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| 字数代码 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 125 °C | 110 °C | 70 °C | 85 °C | 110 °C |
| 最低工作温度 | -55 °C | -55 °C | - | -40 °C | -55 °C |
| 组织 | 1MX16 | 1MX96 | 1MX96 | 1MX16 | 1MX96 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | CERAMIC | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC | CERAMIC, METAL-SEALED COFIRED |
| 封装代码 | QFP | QFP | QFP | QFP | QFP |
| 封装等效代码 | QFP200,1.6SQ | QFP200,1.6SQ | QFP200,1.6SQ | QFP200,1.6SQ | QFP200,1.6SQ |
| 封装形状 | RECTANGULAR | SQUARE | SQUARE | RECTANGULAR | SQUARE |
| 封装形式 | FLATPACK | FLATPACK | FLATPACK | FLATPACK | FLATPACK |
| 电源 | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 座面最大高度 | 2.921 mm | 3.302 mm | 3.302 mm | 2.921 mm | 3.302 mm |
| 最大待机电流 | 0.04 A | 0.04 A | 0.04 A | 0.04 A | 0.04 A |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V | 3.6 V | 3.6 V |
| 最小供电电压 (Vsup) | 3 V | 3 V | 3 V | 3 V | 3 V |
| 标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
| 表面贴装 | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | MILITARY | OTHER | COMMERCIAL | INDUSTRIAL | OTHER |
| 端子形式 | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| 端子节距 | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm | 0.635 mm |
| 端子位置 | QUAD | QUAD | QUAD | QUAD | QUAD |
| 宽度 | 36.83 mm | 36.83 mm | 36.83 mm | 36.83 mm | 36.83 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| 筛选级别 | MIL-PRF-38534 | - | - | MIL-PRF-38534 | MIL-STD-883 |
| 是否Rohs认证 | - | 不符合 | 不符合 | - | 不符合 |
| JESD-609代码 | - | e0 | e0 | - | e0 |
| 端子面层 | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) |
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