epitex
Opto-Device & Custom LED
Super Beam type LED SMB940-1100-03
Lead ( Pb ) Free Product – RoHS Compliant
SMB940-1100-03
♦Specifications
1) Product Name
2) Type No.
3) Chip
(1) Chip Material
(2) Chip Dimension
(3) Peak Wavelength
4) Package
(1) Type
(2) Resin Material
(3) Lead Frame
High Power type Top LED with Lens
SMB940-1100-03 is an AlGaAs LED mounted on copper heat sink with a
5*5
mm package and molded
with super beam lens. On forward bias, it emits a band of radiation which peaks 940nm. These devices
are intended to be operated at pulsed current of 4A under maximum 2.6V for stable long life.
♦Outer
dimension (Unit: mm)
anode
Super Flux mold type LED
SMB940-1100-03
GaAs
1000um*1000um
940nm typ.
Super Beam type LED
Epoxy Resin
Silver Plated Cupper
cathode
land pattern for solder
a1 a2 a3
c1 c2 c3
♦Absolute
Maximum Ratings
Item
Power Dissipation
Forward Current
Pulse Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature
Symbol
P
D
I
F
I
FP
V
R
T
OPR
T
STG
T
SOL
Maximum Rated Value
900
600
4000
10
-30 ~ +85
-30 ~ +100
265
Unit
mW
mA
mA
V
°C
°C
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 265°C
♦Electro-Optical
Characteristics [Ta=25°C]
Item
Forward Voltage
Pulsed Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
V
F
V
F
I
R
P
O
I
E
λ
P
∆λ
θ
1/2
½½
½½
Condition
I
F
=200mA
I
FP
=4A
V
R
=10V
I
F
=200mA
I
F
=200mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
I
F
=50mA
Minimum
Typical
1.25
2.6
20.0
35.0
40
940
60
±12
1000
500
Maximum
1.5
3.5
10
Unit
V
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
EPITEX INC. : 4, Nishiaketa-Cho, Higashi-Kujyou, Minami-Ku, Kyoto, Japan
Tel.: ++81-75-682-2338 Fax: ++81-75-682-2267
e-mail: sales-dep@epitex.com
http://www.epitex.com .
SMB940-1100-03
Forward Current - Forward Voltage
10000
100
Relative Radiant Intensity -
Forward Curentt
10
Forward Current -
Pulse Duration
4
9
8
7
6
5
4
(ta=25°C, tw=10us, Duty=1%)
(ta=25°C, tw=10us, Duty=1%)
50mA Standard
Relative Radiant Intensity (A.U.)
1000
Forward Current (mA)
10
3
2
Forward Current Ifp [mA]
100
1
10
100Hz
10kHz
10Hz
10
100
1kHz
5
4
3
10
0.1
2
1
1.0
0.01
1.5
2.0
2.5
Forward Voltage (mA)
3.0
1
10
100
1000
Forward Current (mA)
10000
10
0.001 0.01
2
0.1
1
duration tw [ms]
Forward Voltage -
Ambient Temperature
2.5
10
9
8
7
6
5
Relative Radiant intensity -
Ambient Temperature
700
Allowable Forward Current -
Ambient Temperature
600
Allowable Forward Current (mA)
2.0
Relative Radiant Intensity (A.U.)
4
3
500
Forward Voltage (V)
1.5
If=50mA
2
400
If=50mA
1
9
8
7
6
5
4
3
1.0
300
200
0.5
2
100
0.0
0
20
40
60
Ambient Temperatture (°C)
80
0.1
0
20
40
60
Ambient Temperature (°C)
80
0
0
20
40
60
80
Ambient Temperature (°C)
100
Peak Wavelength
1.0
Peak Wavelength -
Ambient Temperature
(ta=25°C)
980
0.8
Relative Radiant Intensity (A.U.)
Peak Wavelength (nm)
960
0.6
940
0.4
920
0.2
900
0.0
850
900
950
Wavelength (nm)
1000
0
20
40
60
80
Ambient Temperature (°C)
100
1Hz
1000
3
9
8
7
6
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