REVISIONS
LTR
A
B
C
D
E
F
G
H
J
K
L
M
N
P
DESCRIPTION
Add case outline F. Make changes to 1.2.4, 1.3, and FIGURE 1. - ro
Make change to power dissipation as specified under 1.3. - ro
Add device type 02. Add case outline X. Changes to
JA
and
JC
for case F.
Add radiation hardened requirements. Add vendor CAGE 65342. - rrp
Make change to the offset voltage, V
OS
, test in table I.
Update boilerplate. –rrp
Add device type 03. Editorial changes throughout. –rrp
Add radiation hardened version of device type 01. Make changes to 1.2.2, 1.5,
I
CC
, and I
CCZ
tests in table I. –rrp
Add case outline Z. Changes to 1.2.4, 1.3, and figure 1. –rrp
Make change to note 1/ in table I for device type 01. –rrp
Make change to the neutron irradiation and SEL latch-up tests in
paragraph 1.5. Removed dose rate induced latchup testing and dose rate
burnout paragraphs in section 4. Modified paragraph 4.4.4.3. –rrp
Add device type 01 to the SEL latchup test in 1.5. –rrp
Add power-off leakage test, I
OFF
, in table I. –rrp
Make changes to neutron irradiation and SEL latch-up features in
paragraph 1.5. –rrp
Add room temperature anneal note to device type 01 in paragraph 1.5. –rrp
Add microcircuit die appendix A and paragraph 3.1.1. - ro
DATE (YR-MO-DA)
97-10-20
97-11-18
00-05-25
01-03-01
01-06-11
01-09-06
02-04-11
02-04-30
02-08-12
03-05-08
03-07-28
08-06-02
09-01-06
09-03-12
APPROVED
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. MONNIN
R. HEBER
R. HEBER
R. HEBER
THE ORIGINAL FIRST SHEET OF THIS DRAWING HAS BEEN REPLACED.
REV
SHEET
REV
SHEET
REV STATUS
OF SHEETS
PMIC N/A
P
15
P
16
P
17
REV
SHEET
PREPARED BY
SANDRA ROONEY
P
1
P
2
P
3
P
4
P
5
P
6
P
7
P
8
P
9
P
10
P
11
P
12
P
13
P
14
STANDARD
MICROCIRCUIT
DRAWING
THIS DRAWING IS AVAILABLE
FOR USE BY ALL
DEPARTMENTS
AND AGENCIES OF THE
DEPARTMENT OF DEFENSE
CHECKED BY
SANDRA ROONEY
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
http://www.dscc.dla.mil
APPROVED BY
MICHAEL A. FRYE
DRAWING APPROVAL DATE
96-05-03
MICROCIRCUIT, LINEAR, LVDS QUAD CMOS
DIFFERENTIAL LINE DRIVER, MONOLITHIC
SILICON
AMSC N/A
REVISION LEVEL
P
SIZE
A
SHEET
CAGE CODE
67268
1 OF
17
5962-95833
DSCC FORM 2233
APR 97
5962-E188-09
1. SCOPE
1.1 Scope. This drawing documents two product assurance class levels consisting of high reliability (device classes Q and M)
and space application (device class V). A choice of case outlines and lead finishes are available and are reflected in the Part or
Identifying Number (PIN). When available, a choice of Radiation Hardness Assurance (RHA) levels are reflected in the PIN.
1.2 PIN. The PIN is as shown in the following example:
5962
H
95833
01
Q
F
X
Federal
stock class
designator
\
RHA
designator
(see 1.2.1)
/
Device
type
(see 1.2.2)
Device
class
designator
(see 1.2.3)
Case
outline
(see 1.2.4)
Lead
finish
(see 1.2.5)
\/
Drawing number
1.2.1 RHA designator. Device classes Q and V RHA marked devices meet the MIL-PRF-38535 specified RHA levels and are
marked with the appropriate RHA designator. Device class M RHA marked devices meet the MIL-PRF-38535, appendix A
specified RHA levels and are marked with the appropriate RHA designator. A dash (-) indicates a non-RHA device.
1.2.2 Device type(s). The device type(s) identify the circuit function as follows:
Device type
01
02
03
Generic number
DS90C031
UT54LVDS031
UT54LVDSC031
Circuit function
Radiation hardened, LVDS quad cmos
differential line driver
Radiation hardened, LVDS quad cmos
differential line driver
Radiation hardened, LVDS quad cmos
differential line driver with cold spare on
LVDS bus
1.2.3 Device class designator. The device class designator is a single letter identifying the product assurance level as
follows:
Device class
M
Device requirements documentation
Vendor self-certification to the requirements for MIL-STD-883 compliant, non-
JAN class level B microcircuits in accordance with MIL-PRF-38535, appendix A
Certification and qualification to MIL-PRF-38535
Q or V
1.2.4 Case outline(s). The case outline(s) are as designated in MIL-STD-1835 and as follows:
Outline letter
F
2
X
Z
Descriptive designator
GDFP2-F16 or CDFP3-F16
CQCC1-N20
CDFP4-F16
GDFP1-G16
Terminals
16
20
16
16
Package style
Flat pack
Square leadless chip carrier
Flat pack
Flat pack with gull wing leads
1.2.5 Lead finish. The lead finish is as specified in MIL-PRF-38535 for device classes Q and V or MIL-PRF-38535,
appendix A for device class M.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95833
SHEET
P
2
1.3 Absolute maximum ratings. 1/
Supply voltage (V
CC
) ................................................................................................. -0.3 V to +6 V
Input voltage (V
IN
) ..................................................................................................... -0.3 V to (V
CC
+ 0.3 V)
Enable input voltage (EN, EN*) ................................................................................. -0.3 V to (V
CC
+ 0.3 V)
Output voltage (D
OUT+
, D
OUT-
) ................................................................................
Storage temperature range .......................................................................................
Maximum power dissipation (P
D
):
Cases F and Z ........................................................................................................
Case 2 ....................................................................................................................
Case X ...................................................................................................................
Lead temperature (soldering, 10 seconds) ................................................................
Junction temperature (T
J
) ..........................................................................................
Thermal resistance, junction-to-case (
JC
):
Cases F and Z ........................................................................................................
Case 2 ....................................................................................................................
Case X ...................................................................................................................
Thermal resistance, junction-to-ambient (
JA
):
Cases F and Z ........................................................................................................
Case 2 ....................................................................................................................
Case X ...................................................................................................................
1.4 Recommended operating conditions.
Supply voltage (V
CC
) ................................................................................................. 4.5 V to 5.5 V
Ambient operating temperature range (T
A
) ............................................................... -55C to +125C
1.5 Radiation features
Total dose (effective dose rate = 0.16 rad(Si)/s):
Device type 01 .......................................................................................................
Total dose (dose rate = 50 – 300 rad(Si)/s):
Device type 02 ........................................................................................................
Device type 03 .......................................................................................................
Neutron irradiation:
Device types 02 and 03 ..........................................................................................
Single event latch-up (SEL):
Device types 01, 02, and 03 ...................................................................................
100 Krad (Si) 4/
1
Mrad (Si)
300 Krad (Si)
5/
100
MeV-cm
2
/mg 6/ 7/
-0.3 V to (V
CC
+ 0.3 V)
-65C to +150C
1450 mW 2/
1900 mW 2/
1250 mW 2/
+260C
+150C 3/
14C/W
18C/W
10C/W
145C/W
78C/W
120C/W
1/
2/
3/
4/
5/
6/
7/
Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the
maximum levels may degrade performance and affect reliability.
At T
A
+25C, the derating factor for cases F and Z is 9.7 mW/C, 12.8 mW/C for case 2, and 0.04 mW/C for case X.
For device types 02 and 03, the maximum junction temperature may be increased to +175C during burn-in and life test.
Device type 01 is irradiated at dose rate = 50 - 300 rads(Si)/s in accordance with MIL-STD-883, method 1019, condition A,
and is guaranteed to a maximum total dose specified. The effective dose rate after extended room temperature
anneal = 0.16 rad(Si)/s per MIL-STD-883, method 1019, condition A, section 3.11.2. The total dose specification for this
device only applies to the specified effective dose rate, or lower, environment.
13
2
Neutron irradiation is not tested but guaranteed up to 1 x 10 neutrons/cm . Contact manufacturer for requirements
beyond this level.
Limits are based on characterization, but not production tested unless specified by the customer through the purchase
order or contract.
Device type 01, applicable to class V only.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95833
SHEET
P
3
2. APPLICABLE DOCUMENTS
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the
solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATION
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-883 -
MIL-STD-1835 -
Test Method Standard Microcircuits.
Interface Standard Electronic Component Case Outlines.
DEPARTMENT OF DEFENSE HANDBOOKS
MIL-HDBK-103 -
MIL-HDBK-780 -
List of Standard Microcircuit Drawings.
Standard Microcircuit Drawings.
(Copies of these documents are available online at
http://assist.daps.dla.mil/quicksearch/
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text of
this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a
specific exemption has been obtained.
3. REQUIREMENTS
3.1 Item requirements. The individual item requirements for device classes Q and V shall be in accordance with
MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan. The
modification in the QM plan shall not affect the form, fit, or function as described herein. The individual item requirements for
device class M shall be in accordance with MIL-PRF-38535, appendix A for non-JAN class level B devices and as specified
herein.
3.1.1 Microcircuit die. For the requirements of microcircuit die, see appendix A to this document.
3.2 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as specified in
MIL-PRF-38535 and herein for device classes Q and V or MIL-PRF-38535, appendix A and herein for device class M.
3.2.1 Case outlines. The case outlines shall be in accordance with 1.2.4 herein.
3.2.2 Terminal connections. The terminal connections shall be as specified on figure 1.
3.2.3 Radiation exposure circuit. For device type 01, the radiation exposure circuit shall be maintained by the manufacturer
under document revision level control and shall be made available to the preparing and acquiring activity upon request. For
device types 02 and 03, the radiation exposure circuit shall be as specified in table III.
3.3 Electrical performance characteristics and postirradiation parameter limits. Unless otherwise specified herein, the
electrical performance characteristics and postirradiation parameter limits are as specified in table I and shall apply over the full
ambient operating temperature range.
3.4 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table II. The electrical
tests for each subgroup are defined in table I.
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95833
SHEET
P
4
TABLE I. Electrical performance characteristics.
Conditions 1/ 2/
-55C
T
A
+125C
unless otherwise specified
R
L
= 100
R
L
= 100
Test
Symbol
Group A
subgroups
1,2,3
1,2,3
1,2,3
1,2,3
Device
type
Min
All
All
All
All
01
02
03
0.9
2.0
Limits
Max
1.6
Unit
Output voltage high
Output voltage low
Input voltage high
Input voltage low
Input current
V
OH
V
OL
V
IH
V
IL
I
IN
V
V
V
CC
0.8
10
10
10
450
400
1.375
35
10
25
-1.5
-1.5
V
V
A
GND
-10
-10
-10
250
250
1.125
V
IN
= V
CC
, GND, 2.5 V or
0.4 V
V
IN
= V
CC
, GND
LVDS outputs
3/
1,2,3
V
IN
= 5.5 V, V
CC
= GND,
Differential output voltage
Offset voltage
Change in magnitude of
V
OD1
for complementary
output states
Change in magnitude of
V
OS
for complementary
output states
Input clamp voltage
V
OD1
V
OS
DV
OD1
R
L
= 100
R
L
= 100
R
L
= 100
1,2,3
1,2,3
1,2,3
01
02, 03
All
01
02, 03
mV
V
mV
DV
OS
V
I
R
L
= 100
I
IN
= -18 mA
I
IN
= -18 mA
4/
1,2,3
1,2,3
All
01
02, 03
mV
V
Power-off leakage
Output short circuit current
I
OFF
I
OS
V
OUT
= 0 V or 2.4 V,
V
CC
= 0 V or open
V
OUT
= 0 V
V
OUT
= 0 V
4/
3/
1,2,3
1,2,3
01
01
02, 03
-10
10
-5.0
-5.0
A
mA
EN = 0.8 V, EN* = 2.0 V,
Output tri-state current
I
O
I
CC
Drivers enabled supply
current
V
OUT
= 0 V or V
CC
D
IN
= high or low
M,D,P,L,R
D
IN
= V
CC
or V
SS
Drivers disabled supply
current
I
CCZ
D
IN
= high or low
EN = GND, EN* = V
CC
M,D,P,L,R
D
IN
= V
CC
or V
SS
EN = GND, EN* = V
CC
See footnotes at end of table.
3/
1
1,2,3
02, 03
3/
1,2,3
1,2,3
1
1,2,3
1,2,3
02, 03
All
-10
10
25
30
25
10
30
10
A
mA
01
01
mA
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
5962-95833
SHEET
P
5
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