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BCX51-16: 产品描述1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR,; 产品类别分立半导体晶体管; 文件大小298KB，共5页; 制造商Galaxy Microelectronics

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BCX51-16概述

1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR,

BCX51-16规格参数

参数名称	属性值
厂商名称	Galaxy Microelectronics
包装说明	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
最大集电极电流 (IC)	1 A
集电极-发射极最大电压	45 V
配置	SINGLE
最小直流电流增益 (hFE)	100
JESD-30 代码	R-PSSO-F3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	PNP
表面贴装	YES
端子形式	FLAT
端子位置	SINGLE
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	125 MHz
Base Number Matches	1
类别
极性	PNP
V(BR)CEO (V) min.	45
IC (A)	1
hFE min	100
hFE max	250
Condition1_VCE (V)	2
Condition1_IC (mA)	150
VCE (sat) (V)	0.5
Condition2_IC (mA)	500
Condition2_IB (mA)	50
fT (MHz) min.	125(typ)
PD (W) max.	0.5
AEC Qualified	No
最高工作温度	150
最低工作温度	-65
MSL等级	3
是否无铅	Yes
符合Reach	Yes
符合RoHS	Yes
ECCN代码	EAR99
Package Outlines	SOT-89

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Production specification

PNP Medium power transistors

FEATURES



For AF driver and output stages.

High collector current.

Low collector-emitter saturation voltage.

Complementary types: BCX54/BCX55/BCX56.

BCX51/BCX52/BCX53

Lead-free

APPLICATIONS



Medium power general purposes.

Driver stages of audio amplifiers.

SOT-89

ORDERING INFORMATION

Type No.

BCX51

BCX51-10

BCX51-16

BCX52

BCX52-10

BCX52-16

BCX53

BCX53-10

BCX53-16

Marking

Package Code

SOT-89

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

Collector-Emitter Voltage

CEO

EBO

stg

Emitter-Base Voltage

Collector Current -Continuous

Collector Current -Peak

Total Device Dissipation

Junction and Storage Temperature

Parameter

Collector-Base Voltage

BCX51

BCX52

BCX53

BCX51

BCX52

BCX53

Value

-45

-60

-100

-45

-60

-80

-5

-1

-1.5

500

-65 to +150

Unit

℃

E020

Rev.A

www.gmesemi.com

BCX51-16相似产品对比

	BCX51-16	BCX52-16	BCX51	BCX51-10	BCX53-16	BCX53	BCX53-10	BCX52-10	BCX52
描述	1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR,	1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR,	General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 1A; HFE Min: 63; HFE Max: 250; VCE (V): 2V; IC (mA): 150mA; VCE(SAT) (V): 0.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 50 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89	1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR,	1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR,	80V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 40, 250, 2V	80V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 63, 160, 2V	60V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 60V, 1A, 63, 160, 2V	60V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 60V, 1A, 40, 250, 2V
厂商名称	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics	Galaxy Microelectronics
包装说明	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
最大集电极电流 (IC)	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A	1 A
集电极-发射极最大电压	45 V	60 V	45 V	45 V	80 V	80 V	80 V	60 V	60 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	100	100	25	63	100	25	63	63	25
JESD-30 代码	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
元件数量	1	1	1	1	1	1	1	1	1
端子数量	3	3	3	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES	YES
端子形式	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT	FLAT
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管应用	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz	125 MHz
极性	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP	PNP
V(BR)CEO (V) min.	45	60	45	45	80	80	80	60	60
IC (A)	1	1	1	1	1	1	1	1	1
hFE min	100	100	40	63	100	40	63	63	40
hFE max	250	250	250	160	250	250	160	160	250
Condition1_VCE (V)	2	2	2	2	2	2	2	2	2
Condition1_IC (mA)	150	150	150	150	150	150	150	150	150
VCE (sat) (V)	0.5	0.5	0.5	0.5	0.5	0.5	0.5	0.5	0.5
Condition2_IC (mA)	500	500	500	500	500	500	500	500	500
Condition2_IB (mA)	50	50	50	50	50	50	50	50	50
fT (MHz) min.	125(typ)	125(typ)	125(typ)	125(typ)	125(typ)	125(typ)	125(typ)	125(typ)	125(typ)
PD (W) max.	0.5	0.5	0.5	0.5	0.5	0.5	0.5	0.5	0.5
AEC Qualified	No	No	No	No	No	No	No	No	No
最高工作温度	150	150	150	150	150	150	150	150	150
最低工作温度	-65	-65	-65	-65	-65	-65	-65	-65	-65
MSL等级	3	3	3	3	3	3	3	3	3
是否无铅	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
符合Reach	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
符合RoHS	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes	Yes
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Package Outlines	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89

BCX51-16

BCX51-16概述

BCX51-16规格参数

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BCX51-16相似产品对比

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