General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 1A; HFE Min: 63; HFE Max: 250; VCE (V): 2V; IC (mA): 150mA; VCE(SAT) (V): 0.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 50 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89
| 参数名称 | 属性值 |
| 厂商名称 | Galaxy Microelectronics |
| 零件包装代码 | SOT-89 |
| 包装说明 | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknown |
| 最大集电极电流 (IC) | 1 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 25 |
| JESD-30 代码 | R-PSSO-F3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 极性/信道类型 | PNP |
| 表面贴装 | YES |
| 端子形式 | FLAT |
| 端子位置 | SINGLE |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 125 MHz |
| Base Number Matches | 1 |
| 类别 | |
| 极性 | PNP |
| V(BR)CEO (V) min. | 45 |
| IC (A) | 1 |
| hFE min | 40 |
| hFE max | 250 |
| Condition1_VCE (V) | 2 |
| Condition1_IC (mA) | 150 |
| VCE (sat) (V) | 0.5 |
| Condition2_IC (mA) | 500 |
| Condition2_IB (mA) | 50 |
| fT (MHz) min. | 125(typ) |
| PD (W) max. | 0.5 |
| AEC Qualified | No |
| 最高工作温度 | 150 |
| 最低工作温度 | -65 |
| MSL等级 | 3 |
| 是否无铅 | Yes |
| 符合Reach | Yes |
| 符合RoHS | Yes |
| ECCN代码 | EAR99 |
| Package Outlines | SOT-89 |

| BCX51 | BCX52-16 | BCX51-16 | BCX51-10 | BCX53-16 | BCX53 | BCX53-10 | BCX52-10 | BCX52 | |
|---|---|---|---|---|---|---|---|---|---|
| 描述 | General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 45V; IC (A): 1A; HFE Min: 63; HFE Max: 250; VCE (V): 2V; IC (mA): 150mA; VCE(SAT) (V): 0.5V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 50 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89 | 1000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, | 1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, | 1000mA, 45V, PNP, Si, SMALL SIGNAL TRANSISTOR, | 1000mA, 80V, PNP, Si, SMALL SIGNAL TRANSISTOR, | 80V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 40, 250, 2V | 80V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 80V, 1A, 63, 160, 2V | 60V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 60V, 1A, 63, 160, 2V | 60V,1A,General Purpose PNP Bipolar Transistor, Diodes, PNP, 60V, 1A, 40, 250, 2V |
| 厂商名称 | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics | Galaxy Microelectronics |
| 包装说明 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 | SMALL OUTLINE, R-PSSO-F3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| 最大集电极电流 (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
| 集电极-发射极最大电压 | 45 V | 60 V | 45 V | 45 V | 80 V | 80 V | 80 V | 60 V | 60 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 25 | 100 | 100 | 63 | 100 | 25 | 63 | 63 | 25 |
| JESD-30 代码 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 | R-PSSO-F3 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES | YES | YES |
| 端子形式 | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT | FLAT |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| 标称过渡频率 (fT) | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz | 125 MHz |
| 极性 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
| V(BR)CEO (V) min. | 45 | 60 | 45 | 45 | 80 | 80 | 80 | 60 | 60 |
| IC (A) | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| hFE min | 40 | 100 | 100 | 63 | 100 | 40 | 63 | 63 | 40 |
| hFE max | 250 | 250 | 250 | 160 | 250 | 250 | 160 | 160 | 250 |
| Condition1_VCE (V) | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Condition1_IC (mA) | 150 | 150 | 150 | 150 | 150 | 150 | 150 | 150 | 150 |
| VCE (sat) (V) | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 |
| Condition2_IC (mA) | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 | 500 |
| Condition2_IB (mA) | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 | 50 |
| fT (MHz) min. | 125(typ) | 125(typ) | 125(typ) | 125(typ) | 125(typ) | 125(typ) | 125(typ) | 125(typ) | 125(typ) |
| PD (W) max. | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 | 0.5 |
| AEC Qualified | No | No | No | No | No | No | No | No | No |
| 最高工作温度 | 150 | 150 | 150 | 150 | 150 | 150 | 150 | 150 | 150 |
| 最低工作温度 | -65 | -65 | -65 | -65 | -65 | -65 | -65 | -65 | -65 |
| MSL等级 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
| 是否无铅 | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| 符合Reach | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| 符合RoHS | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes | Yes |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Package Outlines | SOT-89 | SOT-89 | SOT-89 | SOT-89 | SOT-89 | SOT-89 | SOT-89 | SOT-89 | SOT-89 |
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