DATA SHEET
Silicon Schottky Barrier Diodes: Packaged, Bondable Chips
and Beam Leads
Applications
Detectors
Mixers
Features
Available in both P-type and N-type low barrier designs
Low 1/f noise
Large bond pad chip design
Planar passivated beam-lead and chip construction
Packages rated MSL1, 260
C
per JEDEC J-STD-020)
efficiency during manual operations, and is ideal for automated
assembly.
The choice of N- and P-type silicon allows the designer to
optimize the silicon material for the intended application:
Doppler mixers and high-sensitivity detectors benefit from using
the low noise characteristics of the P-type silicon.
Low conversion loss mixers and biased detectors can be
designed using standard N-type material.
Skyworks
Pb-free products are compliant with
all applicable legislation. For additional
information, refer to
Skyworks Definition of
Lead (Pb)-Free,
document number
SQ04-0073.
Description
Skyworks packaged, beam-lead and chip Schottky barrier
detector diodes are designed for applications through 40 GHz in
the Ka band. They are made by the deposition of a suitable barrier
metal on an epitaxial silicon substrate to form the junction. The
process and choice of materials result in low series resistance
along with a narrow spread of capacitance values for close
impedance control. P-type silicon is used to obtain superior 1/f
noise characteristics. N-type silicon is also available.
Packaged diodes are suitable for use in waveguide, coaxial, and
stripline applications. Beam-lead and chip diodes can also be
mounted in a variety of packages or on special customer
substrates.
Unmounted beam-lead diodes are especially well suited for use in
Microwave Integrated Circuit (MIC) applications. Mounted beam-
lead diodes can be easily used in MIC, stripline, or other such
circuitry.
These “universal chips” are designed for a high degree of device
reliability in both commercial and industrial uses. The offset bond
pad assures that no mechanical damage occurs at the junction
during the wire bonding. Additionally, the 4 mil bond pad
eliminates performance variation due to bonding, improves
Applications
These diodes are categorized by Tangential Signal Sensitivity
(TSS) for detector applications in four frequency ranges: S, X, Ku,
and Ka bands. However, they can also be used as modulators,
high-speed switches, and low-power limiters.
TSS is a parameter that describes a diode’s detector sensitivity. It
is defined as the amount of signal power, below a one-milliwatt
reference level, required to produce an output pulse with an
amplitude sufficient to raise the noise fluctuations by an amount
equal to the average noise level. TSS is approximately 4 dB above
the minimum detectable signal.
The P-type Schottky diodes in this Data Sheet are optimized for
low noise in the 1/f region. They require a small forward bias (to
reduce video resistance) if efficient operation is required. The bias
not only increases sensitivity but also reduces parameter variation
due to temperature change. Video impedance is a direct function
of bias and follows the 26/l (mA) relationship. This is important to
pulse fidelity, since the video impedance together with the
detector output capacitance affects the effective amplifier
bandwidth.
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
1
SILICON SCHOTTKY BARRIER DIODES
Bias does, however, increase typical noise, particularly in the 1/f
region. Therefore, it should be kept as low as possible (typically 5
to 50
μA).
Wire Bonding
Two methods can be used to connect wire, ribbon, and wire mesh
to the chips:
Thermocompression
Ballbonding
Skyworks recommends use of pure gold wire (0.7 to 1.25 mil
diameter).
Electrical and physical specifications for the silicon Schottky
barrier diodes are provided in Tables 1 through 6. SPICE model
parameters are defined in Table 7. Typical performance
characteristics are shown in Figures 1 through 4. Typical video
detector circuits are shown in Figure 5.
Assembly and Handling Procedure
Die Attach Methods
Universal chips are compatible with both eutectic and conductive
epoxy die attach methods.
Eutectic composition preforms of Au/Sn or Au/Ge are useful when
soldering devices in circuit. Gold/silicon eutectic die attachments
can be accomplished by scrubbing the chip directly to the gold
plated bonding area.
Epoxy die attachments with silver or gold filled conductive epoxies
can also be used when thermal heat sinking is not a requirement.
Table 1. Electrical Specifications: Beam-Lead P-Type Detector Schottky Diodes (Note 1)
Electrical Characteristics
Frequency
Band
Part Number
TSS
(dBm)
(Note 2)
Typ.
X
Ku
K
DDB2503-000
DDB2504-000
DDB2265-000
+50
+48
+50
(Note 3)
Min.
500
500
800
(Note 3)
R
V
(Ω)
Max.
700
700
1200
(Note 3)
C
J
@ 0 V
(pF)
Max.
0.15
0.10
0.10
200-350
200-350
300-450
2
2
3
10.00
16.00
24.15
491-006
491-006
491-006
V
F
@ 1 mA
(mV)
Vb @ 10 μA
(V)
Test
Frequency
(GHz)
Outline
Drawing
Note 1:
Performance is guaranteed only under the conditions listed in this Table.
Note 2:
Bias = 50
μA
Video bandwidth = 10 MHz.
Note 3:
Bias = 30
μA
Table 2. Epoxy and Hermetic Packaged Beam-Lead P-Type Detector Schottky Diodes
Part Numbers/Outline Drawings
Epoxy Stripline
250
DDB2503-250
DDB2504-250
DDB2265-250
Epoxy Stripline
230
DDB2503-230
DDB2504-230
DDB2265-230
Hermetic Stripline
220
DDB2503-220
DDB2504-220
DDB2265-220
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September 30, 2013 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200847F
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Table 3. Electrical Specifications: P-Type Detector Schottky Diode Universal Chips
Electrical Characteristics
Frequency
Band
Part Number
Barrier
R
V
(Ω)
Typ.
Ku
K
CDB7620-000
CDB7619-000
Low
Low
537
735
TSS
(dBm)
(Note 1)
Min.
+40
+50 (Note 3)
C
J
@ 0 V
(pF)
Max.
0.15
0.10
250-350
275-375
V
F
@ 1 mA
(mV)
R
T
@ 10 mA
(Ω)
(Note 2)
Max.
30
40
V
B
@ 10
μA
(V)
Min.
2
3
571-006
571-006
Outline
Drawing
Note 1:
Bias = 50
μA
Video bandwidth = 10 MHz
R
V
= 2800
Ω
Note 2:
Rt is the slope resistance @ 10 mA. The maximum series resistance (Rs) is calculated as: Rs = Rt – 2.8.
Note 3:
Bias = 30 μA
Table 4. Hermetic Packaged P-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Pill
207
CDB7620-207
CDB7619-207
Hermetic Pill
203
CDB7620-203
CDB7619-203
Table 5. Electrical Specifications: N-Type Detector Schottky Diode Chips
Electrical Characteristics
Frequency
Band
Part Number
Barrier
CDF7623-000
CDF7621-000
CME7660-000
CDE7618-000
CDP7624-000
Low
Low
Medium
Medium
Medium/High
V
F
@ 1 mA
(mV)
240-300
270-350
350-450
375-500
450-575
C
J
@ 0 V
(pF)
Max.
X
K
Ku
K
Ku
0.30
0.10
0.15
0.10
0.15
R
T
@ 10 mA
(Ω)
Max.
10
20
10
20
15
V
B
@ 10
μA
(V)
Min.
2
2
3
3
3
R
V
(Ω)
Typ.
245
680
–
–
–
571-011
571-011
571-011
571-011
571-011
Outline
Drawing
Table 6. Hermetic Packaged Beam-Lead N-Type Detector Schottky Diode Chips
Part Numbers/Outline Drawings
Hermetic Ceramic Pill
207
CDF7623-207
CDF7621-207
CME7660-207
CDE7618-207
CDP7624-207
Hermetic Ceramic Pill
203
CDF7623-203
CDF7621-203
CME7660-203
CDE7618-203
CDP7624-203
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
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DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Table 7. SPICE Model Parameters
Parameter
Units
CDB7620-000
I
S
R
S
N
TT
C
JO
M
E
G
XTI
F
C
B
V
I
BV
V
J
A
Ω
–
sec
pF
–
eV
–
–
V
A
V
4E-08
4
1.20
1E-11
0.15
0.35
0.69
2
0.5
10
1E-05
0.495
Part Number
CDF7621-000
9E-08
6
1.10
1E-11
0.11
0.30
0.69
2
0.5
2.5
1E-05
0.510
CDC7623-000
1.1E-07
5
1.10
1E-11
0.20
0.30
0.69
2
0.5
2.5
1E-05
0.510
CDB7619-000
3E-08
30
1.04
1E-11
0.11
0.32
0.69
2
0.5
3.0
1E-05
0.540
Typical I-V Characteristics
10
–1
10
–2
10
–1
10
–2
Forward
Current
(A)
10
–3
10
–4
10
–5
10
–6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward
Current
(A)
10
–3
10
–4
10
–5
10
–6
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Forward Voltage (V)
Figure 1. CDF7621-000
Forward Voltage (V)
Figure 2. CDB7619-000
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September 30, 2013 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200847F
DATA SHEET • SILICON SCHOTTKY BARRIER DIODES
Typical Performance Data
10000.00
R
L
= 10 kΩ
R
L
= 1 MΩ
R
L
= 1 kΩ
R
L
= 100
Ω
10000.00
1000.00
R
L
= 1 MΩ
R
L
= 1 kΩ
50
μA
1000.00
Voltage Output (mV)
Voltage Output (mV)
R
L
= 100 kΩ
100.00
10.00
100.00
R
L
= 10
Ω
5
μA
50
μA
5
μA
R
L
= 10
Ω
10.00
R
L
= 1
Ω
1.00
0.10
–30
1.00
5
μA
Test
Conditions:
f =
9.375 GHz
Test
Conditions:
f =
9.375 GHz
DC Bias = 0
–20
–10
0
+10
+20
0.10
–30
–20
–10
0
+10
+20
Input Power (dBm)
Input Power (dBm)
Figure 3. Voltage Output vs Input Power as a Function of Load
Resistance
Figure 4. Voltage Output vs Input Power as a Function of Load
Resistance and Bias
Unbiased
Input
RF Bypass
Video Output
Shipping Information
Individual Chips
Skyworks silicon Schottky barrier diodes are provided in waffle
packs for bare die and in gel-pack carriers for beamlead devices.
Package dimensions are provided in Figures 6 through 13.
Bias
Supply
Load Resistor
DC Return
Biased
Input
RF Bypass
Video Output
Load Resistor
DC Return
Multi-Octave–High
Sensitivity
Unbiased
RF Bypass
Input
Video Output
Load Resistor
Bias
Supply
Biased
Input
RF Bypass
Video Output
Load Resistor
50
Ω
Broadband–Low
Sensitivity
Figure 5. Typical Video Detector Circuits
Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • sales@skyworksinc.com • www.skyworksinc.com
200847F • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • September 30, 2013
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